FR3096058B1 - VAPOR PHASE CHEMICAL DEPOSIT DEVICE WITH RECONFIGURABLE DEPOSIT ZONES - Google Patents

VAPOR PHASE CHEMICAL DEPOSIT DEVICE WITH RECONFIGURABLE DEPOSIT ZONES Download PDF

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Publication number
FR3096058B1
FR3096058B1 FR1905073A FR1905073A FR3096058B1 FR 3096058 B1 FR3096058 B1 FR 3096058B1 FR 1905073 A FR1905073 A FR 1905073A FR 1905073 A FR1905073 A FR 1905073A FR 3096058 B1 FR3096058 B1 FR 3096058B1
Authority
FR
France
Prior art keywords
deposit
reconfigurable
vapor phase
plates
zones
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1905073A
Other languages
French (fr)
Other versions
FR3096058A1 (en
Inventor
Rémi Monna
Thibaut Desrues
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA, Commissariat a lEnergie Atomique et aux Energies Alternatives CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR1905073A priority Critical patent/FR3096058B1/en
Priority to PCT/EP2020/063306 priority patent/WO2020229529A1/en
Priority to CN202080035790.0A priority patent/CN113840943A/en
Priority to EP20724166.2A priority patent/EP3947771A1/en
Publication of FR3096058A1 publication Critical patent/FR3096058A1/en
Application granted granted Critical
Publication of FR3096058B1 publication Critical patent/FR3096058B1/en
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32577—Electrical connecting means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
    • H01J37/32761—Continuous moving
    • H01J37/32779—Continuous moving of batches of workpieces
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

Dispositif de dépôt chimique en phase vapeur assisté par plasma sur une pluralité de substrats comportant :- une enceinte (2) configurée pour réaliser un dépôt chimique en phase vapeur assisté par plasma.- une nacelle (4) comportant n plateaux (P1, P2) superposés destinés à supporter chacun au moins un substrat, les plateaux (P1, P2) étant en un matériau conducteur électrique et étant isolés électriquement les uns des autres.- des moyens (6) d’alimentation en gaz et d’évacuation connectés à l’enceinte.- un générateur électrique (8).- un circuit de connexion électrique (10) entre le générateur électrique et les plateaux. comportant des moyens de commutation (C1, C2) de sorte que, au moins dans un état de commutation, deux plateaux adjacents ont les mêmes polarités et deux plateaux adjacents ont des polarités opposées. Figure de l’abrégé : 1.A device for plasma-assisted chemical vapor deposition on a plurality of substrates comprising: - an enclosure (2) configured to perform plasma-assisted chemical vapor deposition - a nacelle (4) comprising n trays (P1, P2) superimposed each intended to support at least one substrate, the plates (P1, P2) being made of an electrically conductive material and being electrically insulated from each other. - means (6) for gas supply and evacuation connected to the 'enclosure.- an electric generator (8) .- an electric connection circuit (10) between the electric generator and the plates. comprising switching means (C1, C2) such that, at least in a switching state, two adjacent plates have the same polarities and two adjacent plates have opposite polarities. Abstract figure: 1.

FR1905073A 2019-05-15 2019-05-15 VAPOR PHASE CHEMICAL DEPOSIT DEVICE WITH RECONFIGURABLE DEPOSIT ZONES Active FR3096058B1 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR1905073A FR3096058B1 (en) 2019-05-15 2019-05-15 VAPOR PHASE CHEMICAL DEPOSIT DEVICE WITH RECONFIGURABLE DEPOSIT ZONES
PCT/EP2020/063306 WO2020229529A1 (en) 2019-05-15 2020-05-13 Chemical vapour deposition device having reconfigurable deposition zones
CN202080035790.0A CN113840943A (en) 2019-05-15 2020-05-13 Chemical vapor deposition apparatus with resettable deposition zones
EP20724166.2A EP3947771A1 (en) 2019-05-15 2020-05-13 Chemical vapour deposition device having reconfigurable deposition zones

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1905073A FR3096058B1 (en) 2019-05-15 2019-05-15 VAPOR PHASE CHEMICAL DEPOSIT DEVICE WITH RECONFIGURABLE DEPOSIT ZONES
FR1905073 2019-05-15

Publications (2)

Publication Number Publication Date
FR3096058A1 FR3096058A1 (en) 2020-11-20
FR3096058B1 true FR3096058B1 (en) 2021-06-11

Family

ID=68424960

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1905073A Active FR3096058B1 (en) 2019-05-15 2019-05-15 VAPOR PHASE CHEMICAL DEPOSIT DEVICE WITH RECONFIGURABLE DEPOSIT ZONES

Country Status (4)

Country Link
EP (1) EP3947771A1 (en)
CN (1) CN113840943A (en)
FR (1) FR3096058B1 (en)
WO (1) WO2020229529A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114763607A (en) * 2021-01-14 2022-07-19 营口金辰机械股份有限公司 Supporting device and plasma enhanced chemical vapor deposition equipment

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002134596A (en) * 2000-10-25 2002-05-10 Tokyo Electron Ltd Processor
US20020076507A1 (en) * 2000-12-15 2002-06-20 Chiang Tony P. Process sequence for atomic layer deposition
US20070048456A1 (en) * 2004-09-14 2007-03-01 Keshner Marvin S Plasma enhanced chemical vapor deposition apparatus and method
EP1921178A1 (en) * 2006-11-02 2008-05-14 Dow Corning Corporation Film deposition of amorphous films by electron cyclotron resonance
CN101245449A (en) * 2007-02-14 2008-08-20 北京行者多媒体科技有限公司 Plasma case for thin film production in enormous quantities
CN101245448A (en) * 2007-02-14 2008-08-20 北京行者多媒体科技有限公司 Method for manufacturing thin membrane silicon electrooptical device with single-chamber plasma case
CN101328581B (en) * 2008-07-22 2010-12-01 北京北方微电子基地设备工艺研究中心有限责任公司 Plasma processing apparatus and substrate carrier plate thereof
US8715789B2 (en) * 2009-12-18 2014-05-06 Sub-One Technology, Inc. Chemical vapor deposition for an interior of a hollow article with high aspect ratio
CN101880867B (en) * 2010-07-02 2012-12-26 北京北方微电子基地设备工艺研究中心有限责任公司 Plasma enhanced chemical vapor deposition device
CN102485953B (en) * 2010-12-01 2014-07-30 北京北方微电子基地设备工艺研究中心有限责任公司 Pallet device and crystallized film growth device
CN103649370B (en) * 2011-07-06 2016-03-23 株式会社神户制钢所 Vacuum film formation apparatus
JP6356516B2 (en) * 2014-07-22 2018-07-11 東芝メモリ株式会社 Plasma processing apparatus and plasma processing method
FR3055468B1 (en) * 2016-08-30 2018-11-16 Semco Tech DEVICE FOR PROCESSING PARTS
KR102125512B1 (en) * 2016-10-18 2020-06-23 주식회사 원익아이피에스 Substrate processing device and method
US10654147B2 (en) * 2017-10-17 2020-05-19 Applied Materials, Inc. Polishing of electrostatic substrate support geometries

Also Published As

Publication number Publication date
FR3096058A1 (en) 2020-11-20
EP3947771A1 (en) 2022-02-09
CN113840943A (en) 2021-12-24
WO2020229529A1 (en) 2020-11-19

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