FR3092436B1 - VCSEL side oxidation furnace with local modification of the oxidation rate - Google Patents

VCSEL side oxidation furnace with local modification of the oxidation rate Download PDF

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Publication number
FR3092436B1
FR3092436B1 FR1901040A FR1901040A FR3092436B1 FR 3092436 B1 FR3092436 B1 FR 3092436B1 FR 1901040 A FR1901040 A FR 1901040A FR 1901040 A FR1901040 A FR 1901040A FR 3092436 B1 FR3092436 B1 FR 3092436B1
Authority
FR
France
Prior art keywords
oxidation
furnace
local modification
oxidation chamber
rate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1901040A
Other languages
French (fr)
Other versions
FR3092436A1 (en
Inventor
Pierre Bonnard
Xavier Brun
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aloxtec
Original Assignee
Aloxtec
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aloxtec filed Critical Aloxtec
Priority to FR1901040A priority Critical patent/FR3092436B1/en
Priority to PCT/EP2020/052642 priority patent/WO2020161085A1/en
Publication of FR3092436A1 publication Critical patent/FR3092436A1/en
Application granted granted Critical
Publication of FR3092436B1 publication Critical patent/FR3092436B1/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Lasers (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

Ce four (1) comporte : - une chambre d’oxydation (2), comprenant une atmosphère (20) ; - des moyens d’injection, agencés pour injecter un flux gazeux humide dans la chambre d’oxydation (2) ; - un support chauffant (4), de type suscepteur, agencé dans la chambre d’oxydation (2), et comprenant une surface supérieure (40) destinée à supporter un substrat comprenant les diodes laser ; remarquable en ce que le four (1) comprend un ensemble d’éléments rayonnants (41) agencé de sorte que la surface supérieure (40) présente des zones de chauffage (ZC1, ZC2) possédant des températures différentes. Figure 1This furnace (1) comprises: - an oxidation chamber (2), comprising an atmosphere (20); - injection means, arranged to inject a wet gas stream into the oxidation chamber (2); - a heating support (4), of the susceptor type, arranged in the oxidation chamber (2), and comprising an upper surface (40) intended to support a substrate comprising the laser diodes; remarkable in that the furnace (1) comprises a set of radiating elements (41) arranged so that the upper surface (40) has heating zones (ZC1, ZC2) having different temperatures. Figure 1

FR1901040A 2019-02-04 2019-02-04 VCSEL side oxidation furnace with local modification of the oxidation rate Expired - Fee Related FR3092436B1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR1901040A FR3092436B1 (en) 2019-02-04 2019-02-04 VCSEL side oxidation furnace with local modification of the oxidation rate
PCT/EP2020/052642 WO2020161085A1 (en) 2019-02-04 2020-02-03 Vcsel lateral oxidation furnace with local modification of oxidation rate

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1901040A FR3092436B1 (en) 2019-02-04 2019-02-04 VCSEL side oxidation furnace with local modification of the oxidation rate
FR1901040 2019-02-04

Publications (2)

Publication Number Publication Date
FR3092436A1 FR3092436A1 (en) 2020-08-07
FR3092436B1 true FR3092436B1 (en) 2021-02-12

Family

ID=67107717

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1901040A Expired - Fee Related FR3092436B1 (en) 2019-02-04 2019-02-04 VCSEL side oxidation furnace with local modification of the oxidation rate

Country Status (2)

Country Link
FR (1) FR3092436B1 (en)
WO (1) WO2020161085A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113708217B (en) * 2020-09-02 2023-01-03 北京金太光芯科技有限公司 Vertical cavity surface emitting laser with non-cylindrical platform and preparation method thereof

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4485972B2 (en) * 2005-02-15 2010-06-23 株式会社リコー Semiconductor oxidation apparatus and semiconductor element manufacturing method
US11158526B2 (en) * 2014-02-07 2021-10-26 Applied Materials, Inc. Temperature controlled substrate support assembly
US9558932B2 (en) 2014-06-17 2017-01-31 California Scientific, Inc. Lateral wafer oxidation system with in-situ visual monitoring and method therefor
US10903065B2 (en) * 2017-05-12 2021-01-26 Lam Research Corporation Halogen removal module and associated systems and methods

Also Published As

Publication number Publication date
FR3092436A1 (en) 2020-08-07
WO2020161085A1 (en) 2020-08-13

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