FR3091867B1 - Method for manufacturing a ceramic matrix composite part, composite part, and corresponding electrical component - Google Patents

Method for manufacturing a ceramic matrix composite part, composite part, and corresponding electrical component Download PDF

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Publication number
FR3091867B1
FR3091867B1 FR1900583A FR1900583A FR3091867B1 FR 3091867 B1 FR3091867 B1 FR 3091867B1 FR 1900583 A FR1900583 A FR 1900583A FR 1900583 A FR1900583 A FR 1900583A FR 3091867 B1 FR3091867 B1 FR 3091867B1
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France
Prior art keywords
composite part
ceramic matrix
manufacturing
dimensional volume
electrical component
Prior art date
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Expired - Fee Related
Application number
FR1900583A
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French (fr)
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FR3091867A1 (en
Inventor
Driss Kenfaui
Marie-Laure Locatelli
Nava Zarel Valdez
Lionel Laudebat
Vincent Bley
Pascal Dufour
Christophe Tenailleau
Sophie Guillemet
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Institut National Univ Jean Francois Champollion
Centre National de la Recherche Scientifique CNRS
Universite Toulouse III Paul Sabatier
Original Assignee
Institut National Univ Jean Francois Champollion
Centre National de la Recherche Scientifique CNRS
Universite Toulouse III Paul Sabatier
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Application filed by Institut National Univ Jean Francois Champollion, Centre National de la Recherche Scientifique CNRS, Universite Toulouse III Paul Sabatier filed Critical Institut National Univ Jean Francois Champollion
Priority to FR1900583A priority Critical patent/FR3091867B1/en
Priority to PCT/EP2020/051659 priority patent/WO2020152284A1/en
Publication of FR3091867A1 publication Critical patent/FR3091867A1/en
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Publication of FR3091867B1 publication Critical patent/FR3091867B1/en
Expired - Fee Related legal-status Critical Current
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B18/00Layered products essentially comprising ceramics, e.g. refractory products
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    • C04B35/00Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
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    • C04B35/645Pressure sintering
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    • C04B37/00Joining burned ceramic articles with other burned ceramic articles or other articles by heating
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    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/02Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
    • H01B3/12Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances ceramics
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    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H01L2224/48229Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item the bond pad protruding from the surface of the item
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Abstract

La présente invention concerne un procédé de fabrication d'une pièce composite (11) comprenant : - un substrat (111) constitué d'un premier matériau (A), ledit premier matériau (A) étant une céramique ou un composite à matrice céramique, et - au moins un volume tridimensionnel (112) disposé dans ledit substrat (111), ledit au moins un volume tridimensionnel (112) étant constitué d'un deuxième matériau (B) qui est une céramique ou un composite à matrice céramique présentant une conductivité électrique, une permittivité et une conductivité thermique prédéfinies, le procédé comprenant les étapes suivantes : réalisation (S30) d'une première préforme (P1) constituée du premier matériau (A) et destinée à former le substrat (111) et obtention d'au moins une empreinte (EM) creuse sur une face de ladite première préforme (P1), ladite empreinte (EM) creuse étant configurée pour délimiter ledit volume tridimensionnel (112), remplissage (S31) total ou partiel de ladite au moins une empreinte (EM) creuse avec le deuxième matériau (B) de sorte à réaliser au moins une deuxième préforme (P2) formant ledit au moins un volume tridimensionnel (112), assemblage (S33) par frittage des première et deuxième préformes (P1, P2) de sorte à obtenir la pièce composite (11). Figure 4The present invention relates to a method for manufacturing a composite part (11) comprising: - a substrate (111) consisting of a first material (A), said first material (A) being a ceramic or a composite with a ceramic matrix, and - at least one three-dimensional volume (112) disposed in said substrate (111), said at least one three-dimensional volume (112) being made of a second material (B) which is a ceramic or a ceramic matrix composite having a conductivity electrical, a predefined permittivity and thermal conductivity, the method comprising the following steps: production (S30) of a first preform (P1) made of the first material (A) and intended to form the substrate (111) and obtaining at at least one hollow imprint (EM) on one face of said first preform (P1), said hollow imprint (EM) being configured to delimit said three-dimensional volume (112), total or partial filling (S31) of said at least one imprint (EM) hollows with the second material (B) so as to produce at least a second preform (P2) forming said at least one three-dimensional volume (112), assembly (S33) by sintering the first and second preforms (P1, P2) so as to obtain the composite part (11). Figure 4

FR1900583A 2019-01-23 2019-01-23 Method for manufacturing a ceramic matrix composite part, composite part, and corresponding electrical component Expired - Fee Related FR3091867B1 (en)

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FR1900583A FR3091867B1 (en) 2019-01-23 2019-01-23 Method for manufacturing a ceramic matrix composite part, composite part, and corresponding electrical component
PCT/EP2020/051659 WO2020152284A1 (en) 2019-01-23 2020-01-23 Process for manufacturing a ceramic-matrix composite part, and corresponding composite part and electrical component

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FR1900583A FR3091867B1 (en) 2019-01-23 2019-01-23 Method for manufacturing a ceramic matrix composite part, composite part, and corresponding electrical component

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JPH0829576B2 (en) * 1987-08-08 1996-03-27 新東工業株式会社 Method for manufacturing ceramic structure
DE102013004807B4 (en) * 2013-03-15 2018-12-20 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Process for the production of sintered components
CN103594505A (en) 2013-11-21 2014-02-19 西安永电电气有限责任公司 High-voltage IGBT module capable of weakening partial discharge and manufacturing method thereof
US11104616B2 (en) * 2015-09-30 2021-08-31 Apple Inc. Ceramic having a residual compressive stress for use in electronic devices
FR3052295B1 (en) * 2016-06-06 2018-11-09 Universite Toulouse Iii - Paul Sabatier PROCESS FOR TREATING AN ELECTRICALLY INSULATING MATERIAL WHICH CONFERS SELF-ADAPTIVE ELECTRIC FIELD GRADATION PROPERTIES FOR ELECTRICAL COMPONENTS

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