FR3091867B1 - Method for manufacturing a ceramic matrix composite part, composite part, and corresponding electrical component - Google Patents
Method for manufacturing a ceramic matrix composite part, composite part, and corresponding electrical component Download PDFInfo
- Publication number
- FR3091867B1 FR3091867B1 FR1900583A FR1900583A FR3091867B1 FR 3091867 B1 FR3091867 B1 FR 3091867B1 FR 1900583 A FR1900583 A FR 1900583A FR 1900583 A FR1900583 A FR 1900583A FR 3091867 B1 FR3091867 B1 FR 3091867B1
- Authority
- FR
- France
- Prior art keywords
- composite part
- ceramic matrix
- manufacturing
- dimensional volume
- electrical component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000002131 composite material Substances 0.000 title abstract 4
- 238000004519 manufacturing process Methods 0.000 title abstract 3
- 238000000034 method Methods 0.000 title abstract 3
- 239000011153 ceramic matrix composite Substances 0.000 title abstract 2
- 239000000463 material Substances 0.000 abstract 5
- 239000000919 ceramic Substances 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 239000011159 matrix material Substances 0.000 abstract 1
- 238000005245 sintering Methods 0.000 abstract 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B18/00—Layered products essentially comprising ceramics, e.g. refractory products
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/64—Burning or sintering processes
- C04B35/645—Pressure sintering
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- C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
- C04B37/001—Joining burned ceramic articles with other burned ceramic articles or other articles by heating directly with other burned ceramic articles
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- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/02—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
- H01B3/12—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances ceramics
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- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
- H01L2224/48229—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item the bond pad protruding from the surface of the item
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
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- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
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- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/15—Ceramic or glass substrates
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- H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
- H01L23/24—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel at the normal operating temperature of the device
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- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3135—Double encapsulation or coating and encapsulation
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- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49805—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers the leads being also applied on the sidewalls or the bottom of the substrate, e.g. leadless packages for surface mounting
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- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
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Abstract
La présente invention concerne un procédé de fabrication d'une pièce composite (11) comprenant : - un substrat (111) constitué d'un premier matériau (A), ledit premier matériau (A) étant une céramique ou un composite à matrice céramique, et - au moins un volume tridimensionnel (112) disposé dans ledit substrat (111), ledit au moins un volume tridimensionnel (112) étant constitué d'un deuxième matériau (B) qui est une céramique ou un composite à matrice céramique présentant une conductivité électrique, une permittivité et une conductivité thermique prédéfinies, le procédé comprenant les étapes suivantes : réalisation (S30) d'une première préforme (P1) constituée du premier matériau (A) et destinée à former le substrat (111) et obtention d'au moins une empreinte (EM) creuse sur une face de ladite première préforme (P1), ladite empreinte (EM) creuse étant configurée pour délimiter ledit volume tridimensionnel (112), remplissage (S31) total ou partiel de ladite au moins une empreinte (EM) creuse avec le deuxième matériau (B) de sorte à réaliser au moins une deuxième préforme (P2) formant ledit au moins un volume tridimensionnel (112), assemblage (S33) par frittage des première et deuxième préformes (P1, P2) de sorte à obtenir la pièce composite (11). Figure 4The present invention relates to a method for manufacturing a composite part (11) comprising: - a substrate (111) consisting of a first material (A), said first material (A) being a ceramic or a composite with a ceramic matrix, and - at least one three-dimensional volume (112) disposed in said substrate (111), said at least one three-dimensional volume (112) being made of a second material (B) which is a ceramic or a ceramic matrix composite having a conductivity electrical, a predefined permittivity and thermal conductivity, the method comprising the following steps: production (S30) of a first preform (P1) made of the first material (A) and intended to form the substrate (111) and obtaining at at least one hollow imprint (EM) on one face of said first preform (P1), said hollow imprint (EM) being configured to delimit said three-dimensional volume (112), total or partial filling (S31) of said at least one imprint (EM) hollows with the second material (B) so as to produce at least a second preform (P2) forming said at least one three-dimensional volume (112), assembly (S33) by sintering the first and second preforms (P1, P2) so as to obtain the composite part (11). Figure 4
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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FR1900583A FR3091867B1 (en) | 2019-01-23 | 2019-01-23 | Method for manufacturing a ceramic matrix composite part, composite part, and corresponding electrical component |
PCT/EP2020/051659 WO2020152284A1 (en) | 2019-01-23 | 2020-01-23 | Process for manufacturing a ceramic-matrix composite part, and corresponding composite part and electrical component |
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FR1900583 | 2019-01-23 | ||
FR1900583A FR3091867B1 (en) | 2019-01-23 | 2019-01-23 | Method for manufacturing a ceramic matrix composite part, composite part, and corresponding electrical component |
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FR3091867B1 true FR3091867B1 (en) | 2022-01-07 |
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WO (1) | WO2020152284A1 (en) |
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CN114190042A (en) * | 2021-11-16 | 2022-03-15 | 北京卫星制造厂有限公司 | High-power module integrated circuit device of aerospace power supply product and mounting method thereof |
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JPH0829576B2 (en) * | 1987-08-08 | 1996-03-27 | 新東工業株式会社 | Method for manufacturing ceramic structure |
DE102013004807B4 (en) * | 2013-03-15 | 2018-12-20 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Process for the production of sintered components |
CN103594505A (en) | 2013-11-21 | 2014-02-19 | 西安永电电气有限责任公司 | High-voltage IGBT module capable of weakening partial discharge and manufacturing method thereof |
US11104616B2 (en) * | 2015-09-30 | 2021-08-31 | Apple Inc. | Ceramic having a residual compressive stress for use in electronic devices |
FR3052295B1 (en) * | 2016-06-06 | 2018-11-09 | Universite Toulouse Iii - Paul Sabatier | PROCESS FOR TREATING AN ELECTRICALLY INSULATING MATERIAL WHICH CONFERS SELF-ADAPTIVE ELECTRIC FIELD GRADATION PROPERTIES FOR ELECTRICAL COMPONENTS |
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2019
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FR3091867A1 (en) | 2020-07-24 |
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