FR3091035B1 - METHOD OF MANUFACTURING A PIXEL OF AN OLED MICRO-SCREEN - Google Patents

METHOD OF MANUFACTURING A PIXEL OF AN OLED MICRO-SCREEN Download PDF

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FR3091035B1
FR3091035B1 FR1873304A FR1873304A FR3091035B1 FR 3091035 B1 FR3091035 B1 FR 3091035B1 FR 1873304 A FR1873304 A FR 1873304A FR 1873304 A FR1873304 A FR 1873304A FR 3091035 B1 FR3091035 B1 FR 3091035B1
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pixel
stack
electrode
bilayer
accommodate
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Expired - Fee Related
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FR1873304A
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French (fr)
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FR3091035A1 (en
Inventor
Laurent Mollard
Tony Maindron
Myriam Tournaire
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Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
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Commissariat a lEnergie Atomique CEA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
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Priority to FR1873304A priority Critical patent/FR3091035B1/en
Priority to US16/711,541 priority patent/US10944077B2/en
Priority to EP19215903.6A priority patent/EP3671849B1/en
Priority to JP2019228045A priority patent/JP7516038B2/en
Priority to KR1020190169673A priority patent/KR102719475B1/en
Priority to CN201911308448.9A priority patent/CN111341943B/en
Publication of FR3091035A1 publication Critical patent/FR3091035A1/en
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Publication of FR3091035B1 publication Critical patent/FR3091035B1/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • H10K50/13—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/852—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • H10K50/13—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
    • H10K50/131—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit with spacer layers between the electroluminescent layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/876—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
    • H10K71/233—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers by photolithographic etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00—Properties of the organic materials covered by group H10K85/00
    • H10K2101/10—Triplet emission
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/10—Transparent electrodes, e.g. using graphene
    • H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/10—Transparent electrodes, e.g. using graphene
    • H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
    • H10K2102/102—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising tin oxides, e.g. fluorine-doped SnO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

Ce procédé comporte les étapes successives : a) prévoir un substrat (1) comportant une première électrode (E1) structurée ; b) former successivement des premier et deuxième empilements bicouches sur la première électrode (E1) structurée, chaque empilement bicouche comprenant successivement des première et seconde couches (20, 21 ; 30, 31) réalisées dans des oxydes transparents conducteurs pouvant être gravés de manière sélective ; c) graver le deuxième empilement bicouche pour une zone destinée à accueillir un sous-pixel bleu (PB) et pour une zone destinée à accueillir un sous-pixel vert (PV) ; d) graver le premier empilement bicouche pour la zone destinée à accueillir le sous-pixel bleu (PB) ; e) former un empilement (5) de couches électroluminescentes organiques, configuré pour émettre une lumière blanche ; f) former une seconde électrode (E2) sur l’empilement (5) de couches électroluminescentes organiques de manière à obtenir un résonateur optique avec la première électrode (E1). Figure 15This method comprises the successive steps: a) providing a substrate (1) comprising a first structured electrode (E1); b) successively forming first and second bilayer stacks on the first structured electrode (E1), each bilayer stack successively comprising first and second layers (20, 21; 30, 31) made of transparent conductive oxides which can be selectively etched ; c) etching the second bilayer stack for an area intended to accommodate a blue sub-pixel (PB) and for an area intended to accommodate a green sub-pixel (PV); d) etching the first bilayer stack for the area intended to accommodate the blue sub-pixel (PB); e) forming a stack (5) of organic electroluminescent layers, configured to emit white light; f) forming a second electrode (E2) on the stack (5) of organic electroluminescent layers so as to obtain an optical resonator with the first electrode (E1). Figure 15

FR1873304A 2018-12-19 2018-12-19 METHOD OF MANUFACTURING A PIXEL OF AN OLED MICRO-SCREEN Expired - Fee Related FR3091035B1 (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR1873304A FR3091035B1 (en) 2018-12-19 2018-12-19 METHOD OF MANUFACTURING A PIXEL OF AN OLED MICRO-SCREEN
US16/711,541 US10944077B2 (en) 2018-12-19 2019-12-12 Process for manufacturing a pixel of an OLED micro-display
EP19215903.6A EP3671849B1 (en) 2018-12-19 2019-12-13 Method for manufacturing a pixel of an oled micro-screen
JP2019228045A JP7516038B2 (en) 2018-12-19 2019-12-18 Process for manufacturing pixels for OLED microdisplays
KR1020190169673A KR102719475B1 (en) 2018-12-19 2019-12-18 Process for manufacturing a pixel of an oled micro-display
CN201911308448.9A CN111341943B (en) 2018-12-19 2019-12-18 Method for manufacturing pixels of OLED micro-display

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1873304A FR3091035B1 (en) 2018-12-19 2018-12-19 METHOD OF MANUFACTURING A PIXEL OF AN OLED MICRO-SCREEN

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FR3091035A1 FR3091035A1 (en) 2020-06-26
FR3091035B1 true FR3091035B1 (en) 2020-12-04

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US (1) US10944077B2 (en)
EP (1) EP3671849B1 (en)
JP (1) JP7516038B2 (en)
CN (1) CN111341943B (en)
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JP2022115080A (en) 2021-01-27 2022-08-08 株式会社半導体エネルギー研究所 Display device
WO2022180480A1 (en) 2021-02-25 2022-09-01 株式会社半導体エネルギー研究所 Semiconductor device and electronic apparatus
US11815689B2 (en) 2021-04-30 2023-11-14 Semiconductor Energy Laboratory Co., Ltd. Electronic device
US11699391B2 (en) 2021-05-13 2023-07-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display apparatus, and electronic device
FR3129523A1 (en) * 2021-11-19 2023-05-26 Commissariat A L'energie Atomique Et Aux Energies Alternatives METHOD FOR MANUFACTURING AN OPTOELECTRONIC DEVICE

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US20200203662A1 (en) 2020-06-25
EP3671849B1 (en) 2021-04-28
US10944077B2 (en) 2021-03-09
JP2020126828A (en) 2020-08-20
FR3091035A1 (en) 2020-06-26
CN111341943B (en) 2024-03-08
KR20200076635A (en) 2020-06-29
EP3671849A1 (en) 2020-06-24
JP7516038B2 (en) 2024-07-16
CN111341943A (en) 2020-06-26

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