FR3085769B1 - Memoire a code correcteur d'erreur - Google Patents

Memoire a code correcteur d'erreur Download PDF

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Publication number
FR3085769B1
FR3085769B1 FR1857993A FR1857993A FR3085769B1 FR 3085769 B1 FR3085769 B1 FR 3085769B1 FR 1857993 A FR1857993 A FR 1857993A FR 1857993 A FR1857993 A FR 1857993A FR 3085769 B1 FR3085769 B1 FR 3085769B1
Authority
FR
France
Prior art keywords
code memory
error correction
correction code
writing
present description
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1857993A
Other languages
English (en)
Other versions
FR3085769A1 (fr
Inventor
Gerald Briat
Antoine De-Muynck
Alessandro Bastoni
Stephane Marmey
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics Rousset SAS
STMicroelectronics Grenoble 2 SAS
STMicroelectronics Alps SAS
Original Assignee
STMicroelectronics Rousset SAS
STMicroelectronics Grenoble 2 SAS
STMicroelectronics Alps SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics Rousset SAS, STMicroelectronics Grenoble 2 SAS, STMicroelectronics Alps SAS filed Critical STMicroelectronics Rousset SAS
Priority to FR1857993A priority Critical patent/FR3085769B1/fr
Priority to CN201921470130.6U priority patent/CN210984286U/zh
Priority to US16/562,025 priority patent/US11392453B2/en
Publication of FR3085769A1 publication Critical patent/FR3085769A1/fr
Application granted granted Critical
Publication of FR3085769B1 publication Critical patent/FR3085769B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
    • G06F11/1068—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices in sector programmable memories, e.g. flash disk
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/22—Detection or location of defective computer hardware by testing during standby operation or during idle time, e.g. start-up testing
    • G06F11/2205—Detection or location of defective computer hardware by testing during standby operation or during idle time, e.g. start-up testing using arrangements specific to the hardware being tested
    • G06F11/2215—Detection or location of defective computer hardware by testing during standby operation or during idle time, e.g. start-up testing using arrangements specific to the hardware being tested to test error correction or detection circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Quality & Reliability (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Detection And Correction Of Errors (AREA)

Abstract

La présente description concerne un procédé comprenant une écriture d'un ou plusieurs mots volontairement invalides dans une mémoire à code correcteur d'erreur (102).
FR1857993A 2018-09-06 2018-09-06 Memoire a code correcteur d'erreur Active FR3085769B1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FR1857993A FR3085769B1 (fr) 2018-09-06 2018-09-06 Memoire a code correcteur d'erreur
CN201921470130.6U CN210984286U (zh) 2018-09-06 2019-09-05 错误校正码存储器和电子电路
US16/562,025 US11392453B2 (en) 2018-09-06 2019-09-05 Error correction code memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1857993A FR3085769B1 (fr) 2018-09-06 2018-09-06 Memoire a code correcteur d'erreur

Publications (2)

Publication Number Publication Date
FR3085769A1 FR3085769A1 (fr) 2020-03-13
FR3085769B1 true FR3085769B1 (fr) 2021-01-29

Family

ID=65243723

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1857993A Active FR3085769B1 (fr) 2018-09-06 2018-09-06 Memoire a code correcteur d'erreur

Country Status (3)

Country Link
US (1) US11392453B2 (fr)
CN (1) CN210984286U (fr)
FR (1) FR3085769B1 (fr)

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7149945B2 (en) * 2003-05-09 2006-12-12 Hewlett-Packard Development Company, L.P. Systems and methods for providing error correction code testing functionality
US8181100B1 (en) * 2008-02-07 2012-05-15 Marvell International Ltd. Memory fault injection
US9316691B2 (en) * 2011-03-17 2016-04-19 Eigenix Method and apparatus for fault injection
US8914687B2 (en) * 2011-04-15 2014-12-16 Advanced Micro Devices, Inc. Providing test coverage of integrated ECC logic en embedded memory
US8645797B2 (en) * 2011-12-12 2014-02-04 Intel Corporation Injecting a data error into a writeback path to memory
US9195555B2 (en) * 2013-05-24 2015-11-24 International Business Machines Corporation Error injection into the leaf functions of call graphs
WO2017030564A1 (fr) * 2015-08-18 2017-02-23 Hewlett Packard Enterprise Development Lp Réparation post-conditionnement pour le mappage d'un schéma de défaillance de mémoire
US10108512B2 (en) * 2016-04-01 2018-10-23 Intel Corporation Validation of memory on-die error correction code
US10043588B2 (en) * 2016-12-15 2018-08-07 SK Hynix Inc. Memory device
US10389379B2 (en) * 2017-05-12 2019-08-20 Qualcomm Incorporated Error correcting code testing

Also Published As

Publication number Publication date
CN210984286U (zh) 2020-07-10
FR3085769A1 (fr) 2020-03-13
US20200081776A1 (en) 2020-03-12
US11392453B2 (en) 2022-07-19

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