FR3073670B1 - Procede de formation d'electrodes - Google Patents

Procede de formation d'electrodes Download PDF

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Publication number
FR3073670B1
FR3073670B1 FR1760724A FR1760724A FR3073670B1 FR 3073670 B1 FR3073670 B1 FR 3073670B1 FR 1760724 A FR1760724 A FR 1760724A FR 1760724 A FR1760724 A FR 1760724A FR 3073670 B1 FR3073670 B1 FR 3073670B1
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FR
France
Prior art keywords
strip
forming
electrode
conductive layer
laser ablation
Prior art date
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Active
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FR1760724A
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English (en)
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FR3073670A1 (fr
Inventor
Samuel Harrison
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Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
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Priority to FR1760724A priority Critical patent/FR3073670B1/fr
Publication of FR3073670A1 publication Critical patent/FR3073670A1/fr
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Publication of FR3073670B1 publication Critical patent/FR3073670B1/fr
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
    • H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Energy (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Sustainable Development (AREA)
  • Photovoltaic Devices (AREA)

Abstract

L'invention concerne un procédé de formation d'une première électrode (23) et d'une seconde électrode (24) sur une face (12) d'une cellule photovoltaïque (10), respectivement, avec une première (18) et une seconde (19) région adjacentes selon une ligne de contact, le procédé comprenant les étapes : a) une étape comprenant la formation d'une bande (21) recouvrant la ligne de contact ; b) une étape de formation d'une couche conductrice (22) sur la face principale (12), en recouvrement des première (18) et seconde (19) régions et de la bande (21); c) une étape de gravure par l'ablation laser limitée à une région de la couche conductrice (22) au droit de la bande (21) de manière à délimiter la première (23) et la seconde (24) électrode, la bande (21) est adaptée pour absorber l'énergie dégagée lors de l'ablation laser.
FR1760724A 2017-11-15 2017-11-15 Procede de formation d'electrodes Active FR3073670B1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR1760724A FR3073670B1 (fr) 2017-11-15 2017-11-15 Procede de formation d'electrodes

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1760724 2017-11-15
FR1760724A FR3073670B1 (fr) 2017-11-15 2017-11-15 Procede de formation d'electrodes

Publications (2)

Publication Number Publication Date
FR3073670A1 FR3073670A1 (fr) 2019-05-17
FR3073670B1 true FR3073670B1 (fr) 2019-12-13

Family

ID=61003193

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1760724A Active FR3073670B1 (fr) 2017-11-15 2017-11-15 Procede de formation d'electrodes

Country Status (1)

Country Link
FR (1) FR3073670B1 (fr)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120211063A1 (en) * 2009-03-17 2012-08-23 Jong-Jan Lee Back Contact Solar Cell with Organic Semiconductor Heterojunctions
JP5906393B2 (ja) * 2010-02-26 2016-04-20 パナソニックＩｐマネジメント株式会社 太陽電池及び太陽電池の製造方法
WO2013145008A1 (fr) * 2012-03-29 2013-10-03 三菱電機株式会社 Elément photovoltaïque, procédé de fabrication de celui-ci et module à cellules solaires
GB2503515A (en) * 2012-06-29 2014-01-01 Rec Cells Pte Ltd A rear contact heterojunction solar cell

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Publication number Publication date
FR3073670A1 (fr) 2019-05-17

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