FR3059827B1 - Composant optoelectronique a absorption amelioree - Google Patents

Composant optoelectronique a absorption amelioree Download PDF

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Publication number
FR3059827B1
FR3059827B1 FR1661880A FR1661880A FR3059827B1 FR 3059827 B1 FR3059827 B1 FR 3059827B1 FR 1661880 A FR1661880 A FR 1661880A FR 1661880 A FR1661880 A FR 1661880A FR 3059827 B1 FR3059827 B1 FR 3059827B1
Authority
FR
France
Prior art keywords
reflective
nano
cavities
face
islands
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1661880A
Other languages
English (en)
Other versions
FR3059827A1 (fr
Inventor
Nicolas Vandamme
Stephane Collin
Jean-Francois Guillemoles
Andrea Cattoni
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Electricite de France SA
Centre National de la Recherche Scientifique CNRS
Institut Photovoltaique dIle de France IPVF
Original Assignee
Electricite de France SA
Centre National de la Recherche Scientifique CNRS
Institut Photovoltaique dIle de France IPVF
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Electricite de France SA, Centre National de la Recherche Scientifique CNRS, Institut Photovoltaique dIle de France IPVF filed Critical Electricite de France SA
Priority to FR1661880A priority Critical patent/FR3059827B1/fr
Priority to PCT/EP2017/081372 priority patent/WO2018100205A1/fr
Publication of FR3059827A1 publication Critical patent/FR3059827A1/fr
Application granted granted Critical
Publication of FR3059827B1 publication Critical patent/FR3059827B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02322—Optical elements or arrangements associated with the device comprising luminescent members, e.g. fluorescent sheets upon the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/055—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means where light is absorbed and re-emitted at a different wavelength by the optical element directly associated or integrated with the PV cell, e.g. by using luminescent material, fluorescent concentrators or up-conversion arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)

Abstract

Selon un aspect, l'invention concerne un composant optoélectronique (30) présentant une face avant (35), et comprenant : un ensemble de couches en contact (31) dont au moins une couche de conversion optoélectronique (310) formée d'un matériau absorbant de gap donné; au moins un premier et un deuxième contacts électriques (73) adaptés à la collection ou l'injection de charges dans la couche de conversion optoélectronique; et une couche réfléchissante (32) avec une première face formant une face arrière (36) du composant, opposée à la face avant. La couche réfléchissante présente une deuxième face en contact avec ledit ensemble de couches (31), nanostructurée sur une épaisseur (hg) inférieure au micron pour former un ensemble d'îlots réfléchissants (323) et de nano-cavités (322) entre les îlots réfléchissants, la dimension maximale d'une nano-cavité ou d'un îlot réfléchissant et la distance maximale entre deux nano-cavités ou deux îlots réfléchissants étant inférieure au micron; et les nano-cavités sont remplies d'un matériau diélectrique dopé avec au moins un premier composé optiquement actif adapté pour au moins une première photo-conversion d'une première bande spectrale vers une deuxième bande spectrale, la deuxième bande spectrale étant au moins partiellement comprise dans la bande spectrale d'absorption de la couche de conversion optoélectronique.
FR1661880A 2016-12-02 2016-12-02 Composant optoelectronique a absorption amelioree Expired - Fee Related FR3059827B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR1661880A FR3059827B1 (fr) 2016-12-02 2016-12-02 Composant optoelectronique a absorption amelioree
PCT/EP2017/081372 WO2018100205A1 (fr) 2016-12-02 2017-12-04 Composant optoéléctronique à absorption améliorée

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1661880 2016-12-02
FR1661880A FR3059827B1 (fr) 2016-12-02 2016-12-02 Composant optoelectronique a absorption amelioree

Publications (2)

Publication Number Publication Date
FR3059827A1 FR3059827A1 (fr) 2018-06-08
FR3059827B1 true FR3059827B1 (fr) 2019-05-17

Family

ID=59649740

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1661880A Expired - Fee Related FR3059827B1 (fr) 2016-12-02 2016-12-02 Composant optoelectronique a absorption amelioree

Country Status (2)

Country Link
FR (1) FR3059827B1 (fr)
WO (1) WO2018100205A1 (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109166953B (zh) * 2018-07-03 2020-04-10 华灿光电股份有限公司 一种发光二极管芯片及其制作方法
CN111668324A (zh) * 2019-03-07 2020-09-15 苏州旭创科技有限公司 一种集成光栅反射结构的光探测器
FR3094569B1 (fr) * 2019-03-25 2022-09-09 Centre Nat Rech Scient CELLULE PHOTOVOLTAïQUE
CN110687622B (zh) * 2019-10-14 2022-06-14 江西师范大学 一种偏振可调光谱双重差异性响应的完美光学吸波器及其制备方法
CN117133822A (zh) * 2022-05-16 2023-11-28 隆基绿能科技股份有限公司 一种太阳能电池

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101575733B1 (ko) * 2014-12-24 2015-12-21 한국과학기술연구원 근적외선 파장변환 구조체 및 이를 이용한 태양전지

Also Published As

Publication number Publication date
FR3059827A1 (fr) 2018-06-08
WO2018100205A1 (fr) 2018-06-07

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