FR3056826B1 - Cellule memoire a changement de phase - Google Patents
Cellule memoire a changement de phase Download PDFInfo
- Publication number
- FR3056826B1 FR3056826B1 FR1659175A FR1659175A FR3056826B1 FR 3056826 B1 FR3056826 B1 FR 3056826B1 FR 1659175 A FR1659175 A FR 1659175A FR 1659175 A FR1659175 A FR 1659175A FR 3056826 B1 FR3056826 B1 FR 3056826B1
- Authority
- FR
- France
- Prior art keywords
- phase change
- memory cell
- vias
- metal
- central via
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 229910052751 metal Inorganic materials 0.000 abstract 3
- 239000002184 metal Substances 0.000 abstract 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 239000010949 copper Substances 0.000 abstract 1
- 239000012782 phase change material Substances 0.000 abstract 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract 1
- 229910052721 tungsten Inorganic materials 0.000 abstract 1
- 239000010937 tungsten Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
- H10B63/82—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays the switching components having a common active material layer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/061—Shaping switching materials
- H10N70/066—Shaping switching materials by filling of openings, e.g. damascene method
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/253—Multistable switching devices, e.g. memristors having three or more electrodes, e.g. transistor-like devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/823—Device geometry adapted for essentially horizontal current flow, e.g. bridge type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/841—Electrodes
- H10N70/8413—Electrodes adapted for resistive heating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
Abstract
L'invention concerne un ensemble de deux cellules mémoire à changement de phase comprenant : deux premiers vias (32, 33) en un premier métal tel que le tungstène ; un via central (34) situé entre les premiers vias (32, 33), la partie inférieure du via central (34) étant en le premier métal et sa partie supérieure (44) en un second métal tel que le cuivre ; un élément résistif (48) sur chacun des premiers vias (32, 33) ; et une couche de matériau à changement de phase en contact avec des sommets des éléments résistifs (48).
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1659175A FR3056826B1 (fr) | 2016-09-28 | 2016-09-28 | Cellule memoire a changement de phase |
US15/452,940 US20180090542A1 (en) | 2016-09-28 | 2017-03-08 | Phase-change memory cell |
US16/117,947 US10522593B2 (en) | 2016-09-28 | 2018-08-30 | Phase-change memory cell |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1659175A FR3056826B1 (fr) | 2016-09-28 | 2016-09-28 | Cellule memoire a changement de phase |
FR1659175 | 2016-09-28 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR3056826A1 FR3056826A1 (fr) | 2018-03-30 |
FR3056826B1 true FR3056826B1 (fr) | 2019-05-24 |
Family
ID=57539442
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1659175A Expired - Fee Related FR3056826B1 (fr) | 2016-09-28 | 2016-09-28 | Cellule memoire a changement de phase |
Country Status (2)
Country | Link |
---|---|
US (2) | US20180090542A1 (fr) |
FR (1) | FR3056826B1 (fr) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR3096827A1 (fr) * | 2019-05-28 | 2020-12-04 | Stmicroelectronics (Crolles 2) Sas | Mémoire à changement de phase |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100448899B1 (ko) * | 2002-08-20 | 2004-09-16 | 삼성전자주식회사 | 상변환 기억 소자 |
EP1684352B1 (fr) * | 2005-01-21 | 2008-09-17 | STMicroelectronics S.r.l. | Dispositif de mémoire à changement de phase et son procédé de fabrication |
DE602005011111D1 (de) | 2005-06-03 | 2009-01-02 | St Microelectronics Srl | Selbstjustiertes Verfahren zur Herstellung von Phasenwechselspeicherzellen |
JP4860249B2 (ja) * | 2005-11-26 | 2012-01-25 | エルピーダメモリ株式会社 | 相変化メモリ装置および相変化メモリ装置の製造方法 |
US7910907B2 (en) * | 2006-03-15 | 2011-03-22 | Macronix International Co., Ltd. | Manufacturing method for pipe-shaped electrode phase change memory |
KR100967676B1 (ko) * | 2006-12-27 | 2010-07-07 | 주식회사 하이닉스반도체 | 상변환 기억 소자 및 그의 제조방법 |
US7989251B2 (en) * | 2007-05-14 | 2011-08-02 | Micron Technology, Inc. | Variable resistance memory device having reduced bottom contact area and method of forming the same |
DE102008032067A1 (de) | 2007-07-12 | 2009-01-15 | Samsung Electronics Co., Ltd., Suwon | Verfahren zum Bilden von Phasenänderungsspeichern mit unteren Elektroden |
-
2016
- 2016-09-28 FR FR1659175A patent/FR3056826B1/fr not_active Expired - Fee Related
-
2017
- 2017-03-08 US US15/452,940 patent/US20180090542A1/en not_active Abandoned
-
2018
- 2018-08-30 US US16/117,947 patent/US10522593B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US20180374898A1 (en) | 2018-12-27 |
US20180090542A1 (en) | 2018-03-29 |
FR3056826A1 (fr) | 2018-03-30 |
US10522593B2 (en) | 2019-12-31 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PLFP | Fee payment |
Year of fee payment: 2 |
|
PLSC | Publication of the preliminary search report |
Effective date: 20180330 |
|
PLFP | Fee payment |
Year of fee payment: 3 |
|
PLFP | Fee payment |
Year of fee payment: 4 |
|
ST | Notification of lapse |
Effective date: 20210506 |