FR3055062B1 - Procede d'ecriture autocorrective d'un dispositif de memoire vive statique multiports, et dispositif correspondant - Google Patents
Procede d'ecriture autocorrective d'un dispositif de memoire vive statique multiports, et dispositif correspondant Download PDFInfo
- Publication number
- FR3055062B1 FR3055062B1 FR1657708A FR1657708A FR3055062B1 FR 3055062 B1 FR3055062 B1 FR 3055062B1 FR 1657708 A FR1657708 A FR 1657708A FR 1657708 A FR1657708 A FR 1657708A FR 3055062 B1 FR3055062 B1 FR 3055062B1
- Authority
- FR
- France
- Prior art keywords
- autocorrective
- multiparts
- writing method
- memory device
- static lifting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
- G11C11/419—Read-write [R-W] circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
- G11C2207/22—Control and timing of internal memory operations
- G11C2207/2263—Write conditionally, e.g. only if new data and old data differ
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR1657708A FR3055062B1 (fr) | 2016-08-11 | 2016-08-11 | Procede d'ecriture autocorrective d'un dispositif de memoire vive statique multiports, et dispositif correspondant |
| CN201720183298.3U CN207217121U (zh) | 2016-08-11 | 2017-02-27 | 多端口静态随机存取存储器设备、系统和电子设备 |
| CN201710109580.1A CN107731255B (zh) | 2016-08-11 | 2017-02-27 | 用于对存储器设备进行自动校正写入的方法及相应设备 |
| US15/461,979 US10153036B2 (en) | 2016-08-11 | 2017-03-17 | Method for autocorrective writing to a multiport static random access memory device, and corresponding device |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR1657708A FR3055062B1 (fr) | 2016-08-11 | 2016-08-11 | Procede d'ecriture autocorrective d'un dispositif de memoire vive statique multiports, et dispositif correspondant |
| FR1657708 | 2016-08-11 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR3055062A1 FR3055062A1 (fr) | 2018-02-16 |
| FR3055062B1 true FR3055062B1 (fr) | 2018-08-31 |
Family
ID=57750057
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR1657708A Expired - Fee Related FR3055062B1 (fr) | 2016-08-11 | 2016-08-11 | Procede d'ecriture autocorrective d'un dispositif de memoire vive statique multiports, et dispositif correspondant |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US10153036B2 (fr) |
| CN (2) | CN207217121U (fr) |
| FR (1) | FR3055062B1 (fr) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109801656B (zh) * | 2018-12-29 | 2021-05-07 | 成都海光集成电路设计有限公司 | 一种存储器电路、自适应负电压写辅助控制方法及芯片 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005327437A (ja) * | 2004-04-12 | 2005-11-24 | Nec Electronics Corp | 半導体記憶装置 |
| US7359275B1 (en) * | 2005-09-08 | 2008-04-15 | Integrated Device Technology, Inc. | Reduced size dual-port SRAM cell |
| US8045402B2 (en) * | 2009-06-29 | 2011-10-25 | Arm Limited | Assisting write operations to data storage cells |
| US8218354B2 (en) * | 2009-12-30 | 2012-07-10 | Taiwan Semicondcutor Manufacturing Co., Ltd. | SRAM word-line coupling noise restriction |
| US8363484B2 (en) * | 2011-03-09 | 2013-01-29 | Arm Limited | Memory device and method of controlling a write operation within a memory device |
| US9679664B2 (en) * | 2012-02-11 | 2017-06-13 | Samsung Electronics Co., Ltd. | Method and system for providing a smart memory architecture |
| JP5889734B2 (ja) * | 2012-07-03 | 2016-03-22 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| US9189326B2 (en) * | 2013-10-08 | 2015-11-17 | Advanced Micro Devices, Inc. | Detecting and correcting hard errors in a memory array |
| US9361965B2 (en) * | 2013-10-11 | 2016-06-07 | Texas Instruments Incorporated | Circuit and method for imprint reduction in FRAM memories |
| KR102232922B1 (ko) * | 2014-08-11 | 2021-03-29 | 삼성전자주식회사 | 쓰기 보조 회로를 포함하는 스태틱 랜덤 액세스 메모리 장치 |
-
2016
- 2016-08-11 FR FR1657708A patent/FR3055062B1/fr not_active Expired - Fee Related
-
2017
- 2017-02-27 CN CN201720183298.3U patent/CN207217121U/zh active Active
- 2017-02-27 CN CN201710109580.1A patent/CN107731255B/zh active Active
- 2017-03-17 US US15/461,979 patent/US10153036B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN207217121U (zh) | 2018-04-10 |
| FR3055062A1 (fr) | 2018-02-16 |
| CN107731255B (zh) | 2022-06-24 |
| US10153036B2 (en) | 2018-12-11 |
| US20180047440A1 (en) | 2018-02-15 |
| CN107731255A (zh) | 2018-02-23 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PLFP | Fee payment |
Year of fee payment: 2 |
|
| PLSC | Publication of the preliminary search report |
Effective date: 20180216 |
|
| PLFP | Fee payment |
Year of fee payment: 3 |
|
| PLFP | Fee payment |
Year of fee payment: 4 |
|
| PLFP | Fee payment |
Year of fee payment: 5 |
|
| ST | Notification of lapse |
Effective date: 20220405 |