FR3042343A1 - OPTICAL PHOTOVOLTAIC OPTICAL DEVICE WITH FRONT PLASMON FILTRATION AND REVERSE VARIABLE MULTIREFRINGENCE AND LOCAL CONVEX - Google Patents
OPTICAL PHOTOVOLTAIC OPTICAL DEVICE WITH FRONT PLASMON FILTRATION AND REVERSE VARIABLE MULTIREFRINGENCE AND LOCAL CONVEX Download PDFInfo
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- FR3042343A1 FR3042343A1 FR1502117A FR1502117A FR3042343A1 FR 3042343 A1 FR3042343 A1 FR 3042343A1 FR 1502117 A FR1502117 A FR 1502117A FR 1502117 A FR1502117 A FR 1502117A FR 3042343 A1 FR3042343 A1 FR 3042343A1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/0549—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising spectrum splitting means, e.g. dichroic mirrors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/0488—Double glass encapsulation, e.g. photovoltaic cells arranged between front and rear glass sheets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/0547—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S40/00—Components or accessories in combination with PV modules, not provided for in groups H02S10/00 - H02S30/00
- H02S40/20—Optical components
- H02S40/22—Light-reflecting or light-concentrating means
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
Abstract
Dispositif optique photovoltaïque à filtration plasmonique frontale et multiréfringence variable arrière et convexe local caractérisé en ce qu'il comporte : - Des rangées de cellules solaires bifaciales cristallines (1) ayant une surface frontale (1f) et une surface arrière (1r) de ratio de conversion photovoltaïque minimum de 80% et interconnectées pour former une matrice (2) encapsulée entre un dioptre entrant (4) et sortant (7) dont la distance (e) séparant deux rangées est égale ou inférieure au segment d'une cellule solaire (1) - La surface prise dans le plan de la matrice (2) forme une aire (2s) - un filtre plasmonique (3) collé sur le dioptre entrant (4) et positionné en parallèle d'une rangée de cellules solaires (1) dans l'intervalle (e) séparant les cellules solaires (1) et centré sur l'axe médian entre deux rangées de cellules donc 1/2 de (e) - Une aire de transmission lumineuse (6S) constituée de l'intervalle (e) par une rangée de cellules solaires (1) - Un filtre multiréfringent variable (8) à miroir convexe localement (8c) collé sur la surface inférieure (7") du dioptre sortant (7) recouvrant la surface inférieure (7") d'une surface égale à l'aire (2s) et dont la zone convexe (8c) du filtre (8) est positionnée exactement en superposition parallèle en tout point de l'aire (6S) pour réfléchir les rayons lumineux vers la face arrière (1r) des cellules solaires et vers le filtre plasmonique (3) par divergence des rayons diffractés du miroir dichroïque paraboloïde hyperbolique formant un miroir convexe d'interférence(8c).Photovoltaic optical device with frontal plasmonic filtration and variable rear and convex variable multirefringence characterized in that it comprises: - rows of crystalline bifacial solar cells (1) having a front surface (1f) and a rear surface (1r) of a ratio of photovoltaic conversion of 80% minimum and interconnected to form a matrix (2) encapsulated between an incoming (4) and outgoing (7) diopter whose distance (e) separating two rows is equal to or less than the segment of a solar cell (1) ) - The surface taken in the plane of the matrix (2) forms an area (2s) - a plasmonic filter (3) stuck on the incoming diopter (4) and positioned in parallel with a row of solar cells (1) in the interval (e) separating the solar cells (1) and centered on the median axis between two rows of cells so 1/2 of (e) - A light transmission area (6S) consisting of the interval (e) by a row of solar cells (1) - A locally convex mirror (8c) variable multirefringent filter (8) adhered to the lower surface (7 ") of the outgoing diopter (7) covering the bottom surface (7") of a surface equal to the area (2s) and whose convex zone (8c) of the filter (8) is positioned exactly in parallel superposition at any point of the area (6S) to reflect the light rays towards the rear face (1r) of the solar cells and towards the plasmonic filter (3) by divergence of the diffracted rays of the hyperbolic paraboloid dichroic mirror forming a convex interference mirror (8c).
Description
Dispositif optique photovohalque à filtration plasmonique frontale et multifrépence variable arrière et convexe localPhotovohalic optic device with frontal plasmon filtration and multifrepence variable rear and convex local
Introduction à fart ;Introduction to fart;
La fabrication de module photovoltaïque cristallin requiert le processus suivant : nettoyage du verre ou positionnement d’un matériau à forte transparence positionnement d’un film encapsulant EVA « Ethylène Vinyle Acétate » qui est en majorité de l’éthylène vinyle acétate sur le verre ou matériau à forte transparence soudure d’un ruban de cuivre ayant une couche de protection à base d’un alliage à base d’argent, de plomb et d’étain : la température de la soudure riexcède pas 250°C et ne dure pas plus de 3 secondes par cellules solaires ayant des zones en forme de ligne collecteur de courant des métallisations de l’émetteur sur une largeur de 1,5 à 3 millimètres interconnexion de la polarité négative ‘face avant d’une cellule d’un substrat de type P à la polarité positive ‘face arrière d’une cellule d’un substrat de type P‘ par exemple disposition en rangée de cellules soudées interconnexion des rangées pour un montage en série des cellules solaires nécessitant une soudure de chaque ligne de collecteur de courant positionnement d’un film encapsulant sur la matrice de cellules positionnement d’un film arrière de protection électrique ou d’un verre ou autre matériaux isolant lamination à des fins d’encapsulation des cellules solairesThe manufacture of crystalline photovoltaic modules requires the following process: cleaning of the glass or positioning of a material with high transparency positioning of an encapsulating film EVA "Ethylene Vinyl Acetate" which is mostly ethylene vinyl acetate on the glass or material high-transparency welding of a copper ribbon having a protective layer based on an alloy based on silver, lead and tin: the temperature of the solder does not exceed 250 ° C and lasts no more than 3 seconds per solar cells having current collector-like areas of the emitter metallizations over a width of 1.5 to 3 millimeters interconnection of the negative polarity front face of a cell of a P-type substrate to the positive polarity 'rear face of a cell of a P type substrate' for example row layout of welded cells row interconnection for mounting in ser ie solar cells requiring solder of each current collector line positioning a film encapsulating on the array of cells positioning an electric backing film or a glass or other lamination insulating material for encapsulation purposes solar cells
Cette technique est unilatéralement utilisée mais a des inconvénients : le matériau encapsulant EVA a une viscosité d’une grande variabilité en fonction de la température ce qui induit une pression mécanique sur l’ensemble du dispositif des cellules solaires interconnectées le matériau encapsulant EVA contenant 1% d’eau libère de l’acide acétique et du peroxyde d’hydrogène en permanence qui se retrouvent piégés dans le module photovoltaïque entraînant des corrosions, des réactions chimiques avec les surfaces des cellules solaires, des réactions chimiques avec la surface intérieure du verre et crée la corrosion du verre par la formation de halogénures qui sont des pièges d’électrons mais aussi avec le polymère utilisé en protection électrique du module le matériau EVA ayant un indice de réfraction part réelle variant entre 1,49 et 1,47 sur la bande de rayonnement solaire, ce qui correspond une réponse spectrale proche du verre blanc utilisé, à savoir que le verre ait un traitement particulier le matériau EVA étant réticulé à la surface du verre, il est très difficile de séparer par quelques techniques que ce soient le film EVA du verre et le recyclage du verre comportant l’EVA rend les matériaux constituant le verre trop pollués et donc rendent le recyclage du module non fonctionnel l’encapsulation de 60 cellules solaires sur silicium monocristallin de wafer de format pseudo carré de 156mm de côté obtenu par la méthode de croissance Czochralski, « CZ » cellule à homojonction et émetteur homogène de 18,6% de rendement entraîne les pertes suivantes : à partir d’un ruban interconnectant en série les cellules de 2mm de largeur par 0,2mm d’épaisseur et interconnectant les rangées de cellules thermo-soudées par un ruban de 5 par 0,3mm, les pertes électriques sont de 2,5% les pertes optiques sont de 1% pour un verre avec une couche de silice poreuse d’indice de réfraction variant entre 1,23 et 1,33 pour un verre de transmittance sur le spectre solaire de 93% le module cristallin de ces 60 cellules solaires de 18,6% aura un rendement de 15,85% soit 2,75% et son comportement en température sera très affecté par l’encapsulationThis technique is used unilaterally but has drawbacks: the encapsulating material EVA has a viscosity of great variability as a function of the temperature which induces a mechanical pressure on the entire device of the interconnected solar cells the encapsulating material EVA containing 1% of water releases acetic acid and hydrogen peroxide permanently trapped in the photovoltaic module causing corrosions, chemical reactions with the surfaces of solar cells, chemical reactions with the inner surface of the glass and creates the corrosion of the glass by the formation of halides which are traps of electrons but also with the polymer used in electrical protection of the module the EVA material having a refractive index real part varying between 1.49 and 1.47 on the strip of solar radiation, which corresponds to a spectral response close to the white glass used, To know that the glass has a particular treatment the EVA material being crosslinked on the surface of the glass, it is very difficult to separate by some techniques that it is the EVA film of the glass and the recycling of the glass comprising the EVA makes the materials constituting the too polluted glass and therefore make the recycling of non-functional module the encapsulation of 60 solar cells on monocrystalline wafer silicon of square-shaped format of 156mm side obtained by Czochralski growth method, "CZ" homojunction cell and homogeneous transmitter of 18.6% yield results in the following losses: from a ribbon interconnecting in series cells 2mm wide by 0.2mm thick and interconnecting the rows of heat-sealed cells with a ribbon of 5 by 0, 3mm, the electrical losses are 2.5% the optical losses are 1% for a glass with a porous silica layer of refractive index varying between 1.23 and 1.33 for a glass of transmittance on the solar spectrum of 93% the crystalline modulus of these 60 solar cells of 18.6% will have a yield of 15,85% or 2,75% and its behavior in temperature will be very affected by encapsulation
la cellule solaire de 18,6% sur silicium CZ d’orientation «1-0-0» à émetteur homogène aura un coefficient de variation de sa puissance par rapport à la température d’un facteur négatif de 0,45%/°Kelvin et le module cristallin utilisant l’EVA entre autre aura un coefficient de variation de sa puissance d’un facteur négatif de 0,51%/°K la combinaison des matériaux verres à 93% de transmittance avec l’EVA et des cellules à émetteur homogène est compatible mais l’évolution technologique des ceEules à homojonction vers des émetteurs sélectifs et des passivations arrières, la réponse spectrale des cellules évoluent grandement rendant la combinaison des matériaux d’un module impropre et non efficiente le module cristallin silicium se caractérise également par le comportement optique du silicium à savoir un fort coefficient d’absorption dans les ultra-violets « UV » et une quasi transparence aux infrarouges « IR » et le comportement en fonction de la température d’un module cristallin est intimement lié à la capacité de capter la bande solaire spectrale dont les longueurs d’onde de 250 à 1300nm représentant 80% du spectrethe 18.6% solar cell on homogeneous emitter "1-0-0" CZ silicon will have a coefficient of variation of its power relative to the temperature of a negative factor of 0.45% / ° Kelvin and the crystalline modulus using EVA among others will have a coefficient of variation of its power of a negative factor of 0.51% / ° K the combination of glass materials with 93% transmittance with EVA and transmitter cells homogeneous is compatible but the technological evolution of the cells with homojunction towards selective emitters and rear passivations, the spectral response of the cells evolve greatly rendering the combination of the materials of a module unsuitable and inefficient the crystalline silicon module is also characterized by the optical behavior of silicon, namely a high absorption coefficient in ultraviolet "UV" and a quasi-infrared transparency "IR" and the behavior as a function of the temperature of a crystalline module is intimately related to the ability to capture the spectral solar band whose wavelengths from 250 to 1300 nm representing 80% of the spectrum
La présente invention décrit un dispositif intégré optique permettant de filtrer le spectre lumineux par trois composants pour apporter à la jonction de cellule solaire les photons aux longueurs d’onde absorbées et transmettre les longueurs d’onde utiles à des applications sous le panneau photovoltaïque et réfléchir les longueurs d’onde qui ne sont pas utiles à la production photovoltaïque.The present invention discloses an optical integrated device for filtering the light spectrum by three components to provide the solar cell junction with photons at absorbed wavelengths and to transmit wavelengths useful for applications under the photovoltaic panel and to reflect wavelengths that are not useful for photovoltaic production.
Description du dispositif optique photovoltaïque à filtration plasmonique frontale et multiréfringence variable arrière et convexe local :Description of the photovoltaic optical device with frontal plasmonic filtration and local and convex variable multirefringence:
Dispositif optique photovoltaïque à filtration plasmonique frontale et multiréfringence variable arrière et convexe local caractérisé selon les figures 1 et 2 en ce qu’il comporte :Photovoltaic optical device with frontal plasmonic filtration and variable rear and local convex multirefringence, characterized according to FIGS. 1 and 2, in that it comprises:
Des rangées de cellules solaires bifaciales cristallines (1) ayant une surface frontale (lf) et une surface arrière (lr) de ratio de conversion photovoltaïque minimum de 80% et interconnectées pour former une matrice (2) encapsulée entre un dioptre entrant (4) et sortant (7) dont la distance (e) séparant deux rangées est égale ou inférieure au segment d’une cellule solaire (1)Rows of crystalline bifacial solar cells (1) having a front surface (lf) and a rear surface (lr) of at least 80% photovoltaic conversion ratio and interconnected to form a matrix (2) encapsulated between an incoming diopter (4) and outgoing (7) whose distance (e) separating two rows is equal to or smaller than the segment of a solar cell (1)
La surface prise dans le plan de la matrice (2) forme une aire (2s) un filtre plasmonique (3) collé sur le dioptre entrant (4) et positionné en parallèle d’une rangée de cellules solaires (1) dans l’intervalle (e) séparant les cellules solaires (1) et centré sur l’axe médian entre deux rangées de cellules donc */a de (e)The surface taken in the plane of the matrix (2) forms an area (2s) a plasmonic filter (3) stuck on the incoming diopter (4) and positioned in parallel with a row of solar cells (1) in the interval (e) separating the solar cells (1) and centered on the median axis between two rows of cells so * / a of (e)
Une aire de transmission lumineuse (6S) constituée de l’intervalle (e) par une rangée de cellules solaires (1)A light transmission area (6S) consisting of the interval (e) by a row of solar cells (1)
Un filtre multiréfringent variable (8) à miroir convexe localement (8c) collé sur la surface inférieure (7”) du dioptre sortant (7) recouvrant la surface inférieure (7”) d’une surface égale à l’aire (2s) et dont la zone convexe (8c) du filtre (8) est positionnée exactement en superposition parallèle en tout point de l’aire (6S) pour réfléchir les rayons lumineux vers la face arrière (lr) des cellules solaires et vers le filtre plasmonique (3) par divergence des rayons diffractés du miroir convexe (8c)A variable multirefringent filter (8) with locally convex mirror (8c) adhered to the lower surface (7 ") of the outgoing diopter (7) covering the lower surface (7") of a surface equal to the area (2s) and whose convex zone (8c) of the filter (8) is positioned exactly in parallel superposition at any point of the area (6S) to reflect the light rays towards the rear face (1r) of the solar cells and towards the plasmonic filter (3). ) by divergence of the diffracted radii of the convex mirror (8c)
Ce dispositif optique photovoltaïque à filtration plasmonique frontale et multiréfringence variable arrière et convexe local selon la figure n°3 caractérisé en ce que le filtre plasmonique (3) comporte :This photovoltaic optical device with frontal plasmonic filtration and variable rear and local convex multirefringence according to FIG. 3 characterized in that the plasmonic filter (3) comprises:
Un film d’un polymère (3p) choisi parmi le poly(téréphtalate d’éthylène) (PET), la polyoléfine (PO), un fluoropolymère (PVDF) ayant une micro-réplication bifadale d’un motif prismatique (3”) et (3’”) de segment inférieur ou égal à 25micron selon un angle inférieur ou égal à 60° un composé nanolaminé (3r) composé de multi-couches des matériaux choisi parmi l’Argent, l’Aluminium, le Silicium, l’Or, le Chrome, le Zinc, le Cuivre, le Nickel, le Cobalt, le Lithium, le Platine des nanotubes de Carbone, de Nitrure de Bore, l’oxyde d’aluminium A1203, l’oxyde d’Hafnium Hf02, l’oxyde de Zirconium Zr02, les alliages ternaires hafnium aluminate HfxAlyOz, les alliages ternaires zirconate d’aluminate ZrxAlyOz, les alliages ternaires hafnium zirconate HfxZryOz, les alliages quaternaires hafnia zirconate d’aluminate HfxZryAlzOi, d’oxyde de Titane Ti02A film of a polymer (3p) selected from poly (ethylene terephthalate) (PET), polyolefin (PO), a fluoropolymer (PVDF) having a bifadal micro-replication of a prismatic pattern (3 ") and (3 '") of segment less than or equal to 25 microns at an angle less than or equal to 60 ° a nanolamine compound (3r) composed of multi-layers of materials selected from among silver, aluminum, silicon, gold , Chromium, Zinc, Copper, Nickel, Cobalt, Lithium, Platinum Carbon Nanotubes, Boron Nitride, Aluminum oxide A1203, Hafnium oxide Hf02, Oxide Zirconium Zr02, ternary alloys hafnium aluminate HfxAlyOz, ternary alloys zirconate aluminate ZrxAlyOz, ternary alloys hafnium zirconate HfxZryOz, quaternary alloys hafnia zirconate aluminate HfxZryAlzOi, Titanium oxide TiO2
Le dispositif optique photovoltaïque à filtration plasmonique frontale et multiréfringence variable arrière et convexe local selon la figure n°2 caractérisé en ce que le filtre plasmonique (3) ait une longueur égale à la rangée de cellules solaires (1) et constitue une bande réfléchissante bifaciale.The photovoltaic optical device with frontal plasmonic filtration and variable rear and local convex multirefringence according to FIG. 2 characterized in that the plasmonic filter (3) has a length equal to the row of solar cells (1) and constitutes a bifacial reflective band .
Ce dispositif optique photovoltaïque à filtration plasmonique frontale et multiréfringence variable arrière et convexe local selon la figure n°2 caractérisé en ce que la bande réfléchissante constituant le filtre plasmonique (3) ait une largeur inférieure à l’intervalle (e) par unité de bande réfléchissante.This photovoltaic optical device with frontal plasmonic filtration and local and convex variable multirefringence according to FIG. 2 characterized in that the reflective band constituting the plasmonic filter (3) has a width less than the interval (e) per unit of band reflective.
Le dispositif optique photovoltaïque à filtration plasmonique frontale et multiréfringence variable arrière et convexe local selon la figure n°5 caractérisé en ce que l’espace libre de passage de lumière entrant et sortant à travers soit d’une largeur (e) entre deux rangées de cellules solaires (1) et de la longueur de la rangée de cellules solaires (1) pour former l’aire (6S).The photovoltaic optical device with frontal plasmonic filtration and variable rear and local convex multirefringence according to FIG. 5 characterized in that the free space of passage of light entering and exiting through is of a width (e) between two rows of solar cells (1) and the length of the row of solar cells (1) to form the area (6S).
Ce dispositif optique photovoltaïque à filtration plasmonique frontale et multiréfringence variable arrière et convexe local selon les figures 1 et 5 caractérisé en ce que la face supérieure de la matrice (2) de cellules solaires soit encapsulée avec la surface (4’) du dioptre entrant (4) par un matériau encapsulant (5) choisi parmi les silicones, les acryliques.This photovoltaic optical device with frontal plasmonic filtration and local and convex variable multirefringence according to FIGS. 1 and 5, characterized in that the upper face of the matrix (2) of solar cells is encapsulated with the surface (4 ') of the incoming diopter ( 4) by an encapsulating material (5) selected from silicones, acrylics.
Le dispositif optique photovoltaïque à filtration plasmonique frontale et multiréfringence variable arrière et convexe local selon les figures 1 et 5 caractérisé en ce que le filtre plasmonique (3) par sa face inférieure texturée (3’”) soit orientée vers la face frontale (lf) de cellules solaires (1) et que sa face supérieure texturée (3”) soit encapsulée entre la surface (4*) du dioptre entrant (4) par un matériau encapsulant (6) choisi parmi les silicones, les acryliques.The photovoltaic optical device with frontal plasmonic filtration and variable rear and local convex multirefringence according to FIGS. 1 and 5, characterized in that the plasmonic filter (3) by its textured lower face (3 '") is oriented towards the front face (lf) solar cells (1) and that its textured upper face (3 ") is encapsulated between the surface (4 *) of the incoming diopter (4) by an encapsulating material (6) selected from silicones, acrylics.
Ce dispositif optique photovoltaïque à filtration plasmonique frontale et multiréfringence variable arrière et convexe local selon la figure n°5 caractérisé en ce que la surface (8s) du filtre multiréfringent variable (8) ait une surface égale à l’aire (2s) de la matrice (2) de cellules solaires (1) et constitue trois plans parallèles entre le filtre plasmonique (3) et la matrice de cellules (2) et le filtre multiréfringent variable (8) afin que le dichroïsme résultant du filtre (8) est positionné à la face inférieure (lr) des cellules solaires en superposition en tout point de cette aire (2s).This photovoltaic optical device with frontal plasmon filtration and local and convex variable multirefringence according to FIG. 5 characterized in that the surface (8s) of the variable multi-refractive filter (8) has a surface area equal to the area (2s) of the matrix (2) of solar cells (1) and constitutes three parallel planes between the plasmonic filter (3) and the matrix of cells (2) and the variable multirefringent filter (8) so that the dichroism resulting from the filter (8) is positioned at the lower face (lr) of the solar cells superimposed at any point of this area (2s).
Le dispositif optique photovoltaïque à filtration plasmonique frontale et multiréfringence variable arrière et convexe local selon la figure n°4 caractérisé en ce que le filtre multiréfringent variable (8) comporte : une interface (8i) de collage à partir de matériaux choisis parmi les acryliques, les silicones une combinaison de couches (8a) et (8b) formant un nano-laminé dont chaque (8a) et (8b) varie en épaisseur comprise entre 2Angstrôm et 500Angstrom chacune la couche (8a) est la première et la dernière couche du nano-laminé à indice de réfraction part réelle compris entre 1,45 et 1,55 sur la bande spectrale de 300 à 1600nm la couche (8b) est la combinaison de (8a) dont l’indice de réfraction part réelle varie entre 1,6 et 2 sur la bande spectrale de 300 à 1600nm.The photovoltaic optical device with frontal plasmonic filtration and local and convex variable multirefringence according to FIG. 4 characterized in that the variable multirefringent filter (8) comprises: an interface (8i) for bonding from materials chosen from acrylics, the silicones a combination of layers (8a) and (8b) forming a nano-laminate, each of which (8a) and (8b) varies in thickness between 2 Angstrom and 500 Angstrom each layer (8a) is the first and the last layer of the nano -laminated refractive index real share between 1.45 and 1.55 on the spectral band 300 to 1600nm the layer (8b) is the combination of (8a) whose refractive index actual share varies between 1.6 and 2 on the spectral band 300 to 1600nm.
Ce dispositif optique photovoltaïque à filtration plasmonique frontale et multiréfringence variable arrière et convexe local selon les figures 2 et 4 caractérisé en ce que le filtre multiréfringent variable (8) consiste à un dichroïsme compris entre λ/10 et λ/2 du spectre incident pour une longueur d’onde λ donnée dont l’interface (8i) peut avoir une texturation de sa surface localisée dont la surface est définie par l’aire (6S) définie par le produit de l’intervalle (e) entre deux rangées de cellules solaires (1) et de la longueur de la rangée de cellules solaires (1).This photovoltaic optical device with frontal plasmon filtration and local and convex variable multirefringence according to FIGS. 2 and 4, characterized in that the variable multirefringent filter (8) consists of a dichroism between λ / 10 and λ / 2 of the incident spectrum for a given wavelength λ whose interface (8i) can have a texturing of its localized surface whose surface is defined by the area (6S) defined by the product of the interval (e) between two rows of solar cells (1) and the length of the row of solar cells (1).
Le dispositif optique (8) caractérisé en ce que la forme convexe soit en matériau acrylate dont la surface a le filtre multiréfringent variable et dont le diamètre (9) de la forme convexe soit au plus égale à l’intervalle (e) et dont la profondeur (10) doit être inférieure à (e/4) et que la surface de ce miroir dichroïque de forme convexe soit supérieure ou égale à l’aire (6S) pour former un miroir dichroïque paraboloïde hyperbolique convexe.The optical device (8) characterized in that the convex shape is of acrylate material whose surface has the variable multirefringent filter and whose diameter (9) of the convex shape is at most equal to the interval (e) and whose depth (10) must be less than (e / 4) and the surface of this convex-shaped dichroic mirror is greater than or equal to the area (6S) to form a convex hyperbolic paraboloid dichroic mirror.
Un exemple de construction d’un tel dispositif photovoltaïque se compose de : - une matrice de cellules solaires bifaciales à passivation arrière de l’emetteur formée sur silicium monocristallin dopé au Phosphore dont les dimensions du substrat pseudo-carrés sont 156,75x156,75mm pour un rayon de lingot de 205mm : la cellule solaire a une efficacité de conversion de 20,8% minimum pour une puissance maximale de 5,06Watt, interconnectée par un ruban enrobé colle conductrice d’une résine de silicone et de cuivre et nano-fils de cuivre sans plomb : la matrice (2) est constituée de 6 rangées de 10 cellules solaires la matrice est organisée pour avoir 16mm d’espace (e) entre les rangées de cellules connectées en série - dioptre entrant (4) est un verre solaire imprimé trempé thermiquement de silicate à transmission de 96% sur le spetre solaire 1.5AM d’épaisseur de 2mm - la matrice (2) formée est encapsulée par sa face avant soumis en radiation solaire directe par un encapsulant (5) de silicone liquide transparent aux UV laminé par une lamination liquide - le dioptre sortant (7) est un verre solaire imprimé d’épaisseur de 2mm de silicate à trempe de durcissement. - le filtre plasmonique est un composé de PET micro-répliqué d’épaisseur de lOOmicron, dont les sillons formant le prisme ont un pas de 20micron et dont la surface est un nano-laminé d’Aluminium, d’oxyde d’aluminium A1203 et en couche de surface un alliage ternaire de HfxAlyOz ce qui augmente la réflectivité sur la bande spectrale de 250-400nm qui sont réfléchis par le filtre à dichroïsme et ont une largeur de 7mm - un filtre multiréfringent variable composé de matériaux acryliques (8a) à indice de réfraction de 1,49 pour une longueur d’onde de 620nm et de matériaux poly-éthylène (8b) à indice de réfraction de 1,76 pour une longueur d’onde de 620nm a une interface acrylique (8i) : ce film a un réseau de 100 pour une épaisseur de 350nm et est laminé sur le dioptre sortant (7) du laminé avant de fixer les câbles et la cavité convexe a une largeur de 18mm pour une profondeur de 4,5mm.An example of the construction of such a photovoltaic device consists of: a matrix of bifacial solar cells with rear passivation of the emitter formed on Phosphorus-doped monocrystalline silicon whose dimensions of the pseudo-square substrate are 156.75 × 156.75 mm for a 205mm ingot radius: the solar cell has a conversion efficiency of 20.8% minimum for a maximum power of 5.06Watt, interconnected by a coated tape conductive glue of a silicone resin and copper and nanowires lead-free copper: the matrix (2) consists of 6 rows of 10 solar cells the matrix is organized to have 16mm of space (e) between rows of cells connected in series - incoming diopter (4) is a solar glass 96% Heat-Treated Silicone Printed Film on 1.5mm Thickness 1.5AM solar spherre - the formed die (2) is encapsulated by its front side subjected to direct solar radiation p by an encapsulant (5) of UV-transparent liquid silicone laminated by a liquid lamination - the outgoing diopter (7) is a printed 2mm thick solar glass of hardening quenching silicate. the plasmonic filter is a micro-replicated PET compound with a thickness of 100 micron, whose prism-forming grooves have a pitch of 20 micron and whose surface is a nano-laminate of aluminum, aluminum oxide A1203 and in surface layer a ternary alloy of HfxAlyOz which increases the reflectivity on the spectral band of 250-400nm which are reflected by the dichroism filter and have a width of 7mm - a variable multirefringent filter composed of acrylic materials (8a) with index refractive index of 1.49 for a wavelength of 620nm and of poly-ethylene material (8b) having a refractive index of 1.76 for a wavelength of 620nm at an acrylic interface (8i): this film has a network of 100 for a thickness of 350nm and is laminated on the outgoing dioptre (7) of the laminate before fixing the cables and the convex cavity has a width of 18mm for a depth of 4.5mm.
Un tel dispositif optique photovoltaïque à double filtre plasmonique arrière a une puissance lors du test d’insolation sous condition standard de 360Watt pour seulement 60 cellules solaires de 5,06WSuch a dual rear plasmon filter photovoltaic device has power in the standard 360Watt insolation test for only 60 solar cells of 5.06W
Cette invention permet la réalisation d’une augmentation de la puissance d’un module photovoltaïque à fotre transparence par une faible densité de matrice de cellules solaires par une filtration plasmonique qui n’est pas sensible au photo vieillissement par la combinaison des matériaux intégrés : la géométrie du filtre est adaptée en fonction de la réponse spectrale de la cellule solaire et correspond à la réflexion de longueurs d’ondes entre 600 et 900nm : cette fonctionnalité a un intérêt économique par le coût du silicium diminuant ainsi de 50% le nombre de cellules solaires pour la surface du dioptre entrant d’une part et d’une utilisation du spectre lumineux sortant du dioptre sortant pour diverses applications dont la chroma-culture de différents types de végétaux entre autres et de maîtriser le spectre transmis à travers le dispositif optique photovoltaïque pour des longueurs d’onde selon 1’indinaison de ce dernier.This invention allows the realization of an increase in the power of a photovoltaic module fotre transparency by a low density of solar cell matrix by a plasmonic filtration which is not sensitive to photo aging by the combination of integrated materials: the geometry of the filter is adapted according to the spectral response of the solar cell and corresponds to the reflection of wavelengths between 600 and 900nm: this feature has an economic interest by the cost of silicon decreasing by 50% the number of cells solar for the surface of the diopter entering on the one hand and a use of the light spectrum coming out of the outgoing diopter for various applications including chroma-culture of different types of plants among others and to control the spectrum transmitted through the photovoltaic optical device for wavelengths according to the indetermination of the latter.
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| WO2002045143A1 (en) * | 2000-11-29 | 2002-06-06 | Origin Energy Retail Limited | Semiconductor wafer processing to increase the usable planar surface area |
| US20100252107A1 (en) * | 2009-04-02 | 2010-10-07 | Toyota Jidosha Kabushiki Kaisha | Solar cell module |
| EP2383798A1 (en) * | 2009-01-23 | 2011-11-02 | Toyota Jidosha Kabushiki Kaisha | Solar cell module |
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| WO2002045143A1 (en) * | 2000-11-29 | 2002-06-06 | Origin Energy Retail Limited | Semiconductor wafer processing to increase the usable planar surface area |
| EP2383798A1 (en) * | 2009-01-23 | 2011-11-02 | Toyota Jidosha Kabushiki Kaisha | Solar cell module |
| US20100252107A1 (en) * | 2009-04-02 | 2010-10-07 | Toyota Jidosha Kabushiki Kaisha | Solar cell module |
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