FR3021160A1 - - Google Patents

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Publication number
FR3021160A1
FR3021160A1 FR1554009A FR1554009A FR3021160A1 FR 3021160 A1 FR3021160 A1 FR 3021160A1 FR 1554009 A FR1554009 A FR 1554009A FR 1554009 A FR1554009 A FR 1554009A FR 3021160 A1 FR3021160 A1 FR 3021160A1
Authority
FR
France
Prior art keywords
layer
collector
thickness
forming
doping
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR1554009A
Other languages
English (en)
French (fr)
Other versions
FR3021160B1 (fr
Inventor
Nick Gengming Tao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qorvo US Inc
Original Assignee
Triquint Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Triquint Semiconductor Inc filed Critical Triquint Semiconductor Inc
Publication of FR3021160A1 publication Critical patent/FR3021160A1/fr
Application granted granted Critical
Publication of FR3021160B1 publication Critical patent/FR3021160B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/64—Variable-capacitance diodes, e.g. varactors 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/01—Manufacture or treatment
    • H10D1/045—Manufacture or treatment of capacitors having potential barriers, e.g. varactors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/824—Heterojunctions comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/053—Manufacture or treatment of heterojunction diodes or of tunnel diodes

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
FR1554009A 2014-05-16 2015-05-05 Diode varactor a heterostructure Active FR3021160B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/280,404 US10263125B2 (en) 2014-05-16 2014-05-16 Varactor diode with heterostructure
US14280404 2014-05-16

Publications (2)

Publication Number Publication Date
FR3021160A1 true FR3021160A1 (cg-RX-API-DMAC7.html) 2015-11-20
FR3021160B1 FR3021160B1 (fr) 2018-05-18

Family

ID=54361767

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1554009A Active FR3021160B1 (fr) 2014-05-16 2015-05-05 Diode varactor a heterostructure

Country Status (5)

Country Link
US (1) US10263125B2 (cg-RX-API-DMAC7.html)
CN (1) CN105097960A (cg-RX-API-DMAC7.html)
DE (1) DE102015005831A1 (cg-RX-API-DMAC7.html)
FR (1) FR3021160B1 (cg-RX-API-DMAC7.html)
TW (1) TWI654768B (cg-RX-API-DMAC7.html)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113013261B (zh) * 2021-02-23 2022-08-23 温州大学 纳米硅/非晶碳化硅异质结多势垒变容二极管及制备方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5150185A (en) * 1990-04-18 1992-09-22 Fujitsu Limited Semiconductor device
JP2000106370A (ja) * 1998-07-27 2000-04-11 Advantest Corp 負性抵抗を有するバイポ―ラトランジスタ
US7804106B2 (en) * 2003-01-06 2010-09-28 Nippon Telegraph And Telephone Corporation P-type nitride semiconductor structure and bipolar transistor
US7038250B2 (en) * 2003-05-28 2006-05-02 Kabushiki Kaisha Toshiba Semiconductor device suited for a high frequency amplifier
JP2005150531A (ja) * 2003-11-18 2005-06-09 Nec Compound Semiconductor Devices Ltd 半導体装置
JP2005197440A (ja) * 2004-01-07 2005-07-21 Matsushita Electric Ind Co Ltd 半導体装置
KR101623960B1 (ko) * 2009-06-04 2016-05-25 삼성전자주식회사 광전자 셔터, 이의 동작 방법 및 광전자 셔터를 채용한 광학 장치
CN103443988B (zh) * 2011-03-25 2017-03-22 株式会社杰士汤浅国际 圆筒形电池
US8963289B2 (en) * 2012-05-08 2015-02-24 Eta Semiconductor Inc. Digital semiconductor variable capacitor
US8716757B1 (en) * 2012-10-19 2014-05-06 Global Communication Semiconductors, Inc. Monolithic HBT with wide-tuning range varactor
US9099518B1 (en) * 2014-02-04 2015-08-04 Triquint Semiconductor, Inc. Electrostatic discharge protection device

Also Published As

Publication number Publication date
TW201547033A (zh) 2015-12-16
US20150333192A1 (en) 2015-11-19
FR3021160B1 (fr) 2018-05-18
DE102015005831A1 (de) 2015-11-19
CN105097960A (zh) 2015-11-25
US10263125B2 (en) 2019-04-16
TWI654768B (zh) 2019-03-21

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