FR3005790A1 - Elements nanostructures formes a l'interieur d'un materiau silicium et procede de fabrication pour les realiser - Google Patents
Elements nanostructures formes a l'interieur d'un materiau silicium et procede de fabrication pour les realiser Download PDFInfo
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- FR3005790A1 FR3005790A1 FR1401072A FR1401072A FR3005790A1 FR 3005790 A1 FR3005790 A1 FR 3005790A1 FR 1401072 A FR1401072 A FR 1401072A FR 1401072 A FR1401072 A FR 1401072A FR 3005790 A1 FR3005790 A1 FR 3005790A1
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Abstract
Description
Claims (20)
- REVENDICATIONS1. Procédé pour former des unités élémentaires nanométriques appelées segtons à l'intérieur d'un convertisseur lumière-électricité tout en silicium, en particulier une cellule photovoltaïque caractérisé par la succession des étapes suivantes en vue de les former et de les conditionner : a. extraire deux atomes de Si à l'extérieur de la structure cristalline élémentaire en formant un système à deux lacunes appelées bilacunes en focalisant des faisceaux d'énergie : un faisceau d'électrons, un faisceau d'ions ou autres irradiations appropriées, b. placer des segtons en nombre suffisant et bien distribués dans un nano espace bien défini, c. placer les segtons dans la région supérieure de la plaquette de silicium, d. placer de nombreux segtons dans la phase cristalline <c-Si>, e. former une unité d'énergie d'électrons spécifique et utile qui compléter l'énergie fondamentale de bandes du Si pour une photoconversion efficace, f. doper fortement la zone occupée par des défauts et l'espace entourant cette zone pour adopter localement un comportement de type n, g. conserver la population de segtons pendant la durée correspondant à l'élévation de température durant le traitement technologique du convertisseur, h. conditionner la population dense de segtons par des effets physiques superposés par deux champs : électrique et mécanique, un dopage et une exposition adaptée aux photons incidents, i. permettre l'état quasi permanent de double charge négative des segtons, j. assumer deux mécanismes différents de transport d'électrons : sortie par la bande de conduction et entrée par la bande d'impuretés, k. assumer un fonctionnement unidirectionnel des segtons comme un clapet d'énergie, et comme un clapet à géométrie spaciale,.I. assumer un rechargement ultra rapide des segtons provenant d'une conduction des électrons à travers la bande d'impuretés, m. conditionner un centre de génération secondaire d'électrons avec des électrons faiblement liés.
- 2. Procédé selon la revendication 1 caractérisé en ce que les unités élémentaires nanoscopiques sont placées à proximité de la face supérieure du convertisseur en relation étroite avec les longueurs d'ondes lumineuses converties.
- 3. Procédé selon les revendications 1 ou 2 caractérisé en ce que la concentration locale en impuretés (semi-conducteur de type n) est suffisamment grande pour charger et recharger toutes les nombreuses bilacunes.
- 4. Procédé selon l'une quelconque des revendications précédentes caractérisé par la création de réservoirs de bilacunes qui des amorphisations enterrées à l'intérieur de la région émettrice.
- 5. Procédé selon l'une quelconque des revendications précédentes caractérisé par le fait que l'hétéro interface a-Si/c-Si incorpore de nombreuses bilacunes qui sont piégés à l'intérieur du champ de contrainte provenant de la dilatation.
- 6. Procédé selon l'une quelconque des revendications précédentes caractérisé par le fait que les amorphisations enterrées sont enveloppées par une nano couche incorporant des bilacunes pendant le processus de dépôt d'énergie.
- 7. Procédé selon l'une quelconque des revendications précédentes caractérisé par les étapes suivantes du processus : - la phase cristalline <c-Si> fourrée de nombreuses bilacunes est relaxée - la distribution de la phase cristalline <c-Si> qui entoure l'amorphisation est quasi homogène
- 8. Procédé selon l'une quelconque des revendications précédentes caractérisé par un conditionnement thermodynamique clair et local de la phase métamatériau.
- 9. Procédé selon l'une quelconque des revendications précédentes caractérisé en ce qu'il comprend les étapes suivantes : - le profil de dopage de type n (c'est à dire phosphoreux), par diffusion thermique appelée basse température T<1000°C ou une autre méthode telle que l'implantation par dopage dans la région de la plaquette légèrement ou modérément dopée P c'est-à-dire pré dopée par du bore, - pré conditionnement de la surface de la plaquette après le processus de diffusion pour permettre un bon contrôle du volume implanté, - irradiation par un faisceau d'ion de
- 10 - 200 KeV menant à une amorphisation enterrée par une auto implantation de Si ou par une implantation phosphoreuse P, - constitution d'excellentes hétéro-interfaces c-Si/a-Si par un cycle de recuit thermique par exemple à 500°C, - constitution de nano couches de matériau de type métamatériau stabilisées par le cycle de recuit thermique, par exemple à 350 - 450°C, - activation des unités élémentaires, - traitement final du dispositif : couche AR, passivation électronique métallisation. 10. Procédé selon la revendication précédente caractérisé en ce que le précédent dopage de type n (P) est ensuite suivi par une implantation ionique, jusqu'à l'amorphisation locale ou enterrée (P, Si)
- 11. Procédé selon la revendication 9 caractérisé par l'utilisation d'une simple implantation ionique jusqu'à une amorphisation enterrée et localisée en utilisant uniquement des ions de dopage P pour aboutir à un matériau fortement dopé et permettre, en conséquence une conduction unipolaire impliquant simultanément la bande d'impureté et la bande de conduction, dans laquelle l'amorphisation produit des hétéro interfaces enterrées a-Si/c- Si et de petites inclusions a-Si dans c-Si et des inclusions c-Si dans a-Si, un cycle de recuit thermique est ensuite mis en oeuvre préférentiellement à environ 500 - 550°C qui prend la forme d'une épitaxie à l'état solide et mèneà une séparation claire des deux phases du silicium cristalline et amorphisée, aussi bien pour des hétérointerfaces planaires précises a-Si/c-Si et le même cycle thermique mène à la création de nanocouches plus ou moins planaires qui enveloppent de façon douce chaque amorphisation de façon à ce que les nanocouches aient 3 à 10nm d'épaisseur et soient uniformes, sans aucun défaut et inégalités et contiennent des unités nombreuses et ordonnées formant ensemble un seg-matter qui est un MTM (métamatériau) basé sur du silicium placé à l'intérieur d'un matériau semi-conducteur fortement dopé de type n c'est-à-dire ayant subi un dopage (Si : P) et qui dans la cellule élémentaire de silicium cristallin est transformé à nanoéchelle en un segton silicium par le déplacement limité d'atomes de Si en dehors de cette cellule élémentaire en utilisant des énergies relativement basses par atome déplacé d'environ 2,5 KeV/atome un tel déplacement de deux atomes mène à des bilacunes ponctuelles introduisant des liaisons électroniques prolongées qui peuvent capturer et localiser les électrons, et cette bilacune devient techniquement utile en ce qu'elle contient de façon permanente quatre électrons capturés avec l'un d'entre eux faiblement lié dans un matériau fortement dopé de type n, qui a subi, par exemple, un fort dopage phosphoreux (Si :P).
- 12. Procédé selon l'une quelconque des revendications précédentes caractérisé par le fait que l'amorphisation localisée d'un semi-conducteur cristallin précédent est effectuée en utilisant un faisceau d'électrons.
- 13. Procédé selon l'une quelconque des revendications précédentes dans laquelle la transformation structurelle et les unités élémentaires à nanoéchelle ou segtons sont traitées de la façon suivante : - transformation de phase par implantation d'ions dans laquelle une phase cristalline avec une concentration locale de bilacunes est créée, - interface c-Si/a-Si qui résulte de l'implantation d'ions : création Êi lissage conditionnement du seg-matter, - homogénéisation locale de phases amorphisées et cristallines (cycle de recuit) : où il se produit une dissolution des inclusions d'une phase du matériau dans une autre phase,- création de nano membranes délimitant le seg-matter : a-Si/c-Si <aSi>/<c-Si> - barrière d'énergie (grande différence dans la bande de valence) et <c-Si>/<a-Si> - changement du mode de transport des électrons, - processus de conditionnement des segtons par cycle thermique qui mène à l'activation de dopage fort.
- 14. Procédé selon l'une quelconque des revendication précédentes caractérisé en ce que la modulation du matériau menant à la création d'unités élémentaires à nanoéchelle ou segtons par une irradiation ionique permettant la modulation requise du matériau, est realisée en plusieurs étapes : - le profil de dopage initial de type n (par exemple phosphoreux) est obtenu par diffusion thermique dite à basse température T<1000°C dans la plaquette dopée de type P de façon légère ou modérée, par exemple pré dopé par du bore, - pré conditionnement de la surface de la plaquette après le processus de diffusion pour permettre un bon contrôle du volume implanté, - irradiation par un faisceau ionique de 10 - 200 KeV menant à une amorphisation enterrée possible de deux façons : par une auto implantation de Si ou par une implantation de P, - constitution d'une hétéro interface excellente c-Si/a-Si par un cycle de recuit thermique par exemple à 350°C - 450°C - activation des segtons - traitements finals du dispositif : couche AR, passivation électronique métallisation.
- 15. Unité élémentaire à nanoéchelle en tant que la mise en oeuvre du procédé selon l'une quelconque des revendications précédentes de procédé, qui représente une unité de cristal de silicium moins deux atomes dans un état de charge électrique négative double couplée à un environnement physique strictement conditionné.
- 16. Unité élémentaire à nanoéchelle selon la revendication précédente caractérisée en ce que pour la création de chaque unité élémentaire ou segton, il est procédé à un déplacement limité de deux atomes de Si vers l'extérieur de l'unité élémentaire d'un cristal. 32 3005790
- 17. Unités élémentaires selon les revendications 15 à 16 qui sont réalisées à partir d'amorphisations insérées dans un nanoespace localisé à l'intérie l'émetteur près de la face avant du convertisseur. ur de
- 18. Unités élémentaires à nano échelle selon l'une quelconque des 5 revendications 15 à 17 caractérisées par le fait qu'elles sont réalisée à de grand nano-objets amorphisés, dans le matériau hôte c-Si. s partir
- 19. Unités élémentaires à nanoéchelle selon l'une quelconque des revendications 15 à 18 caractérisées par le fait qu'elles conservent un état de charge électrique quasi permanent à cause de la vitesse ultra rapide de 10 régénération de l'état de charge.
- 20. Dispositif de cellule photovoltaïque avec des éléments unitaires selon les revendications précédentes permettant une conversion d'efficacité améliorée provenant du cycle de conversion multi niveaux basé sur l'unité élémentaire à nano échelle qui implique les générations primaires et secondaires. 15
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EP (1) | EP2997604B1 (fr) |
CN (1) | CN105229799B (fr) |
DK (1) | DK2997604T3 (fr) |
FR (1) | FR3005790A1 (fr) |
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PL3022776T3 (pl) * | 2013-07-19 | 2020-11-16 | Segton Adt Sas | Architektoniczny system i związane z nim nanomembrany wbudowane w emiter całkowicie krzemowego konwertera światła na energię elektryczną do fotokonwersji gigantycznej oraz sposób jego produkcji |
FR3067168A1 (fr) | 2017-06-01 | 2018-12-07 | Segton Advanced Technology | Procede de fabrication d'un convertisseur lumiere-electricite tout en silicium pour une photoconversion geante |
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EP2689473B1 (fr) * | 2011-03-25 | 2019-05-08 | SEGTON Advanced Technology | Convertisseur photovoltaïque avec structure d'émetteur améliorée à base de composants en silicium et procédé pour la production du convertisseur photovoltaïque |
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US20160099368A1 (en) | 2016-04-07 |
CN105229799A (zh) | 2016-01-06 |
EP2997604B1 (fr) | 2020-07-08 |
US9722121B2 (en) | 2017-08-01 |
DK2997604T3 (da) | 2020-09-14 |
PL2997604T3 (pl) | 2020-11-30 |
WO2014203080A3 (fr) | 2015-04-16 |
EP2997604A2 (fr) | 2016-03-23 |
CN105229799B (zh) | 2019-06-14 |
WO2014203080A4 (fr) | 2015-06-25 |
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