FR2994617B1 - Photodetecteur a base de germanium a basse tension, a gain eleve et a vitesse elevee et son procede de fabrication - Google Patents

Photodetecteur a base de germanium a basse tension, a gain eleve et a vitesse elevee et son procede de fabrication Download PDF

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Publication number
FR2994617B1
FR2994617B1 FR1357797A FR1357797A FR2994617B1 FR 2994617 B1 FR2994617 B1 FR 2994617B1 FR 1357797 A FR1357797 A FR 1357797A FR 1357797 A FR1357797 A FR 1357797A FR 2994617 B1 FR2994617 B1 FR 2994617B1
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FR
France
Prior art keywords
manufacturing same
germanium based
based photodetector
gain
high speed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1357797A
Other languages
English (en)
Other versions
FR2994617A1 (fr
Inventor
Gyungock Kim
Sang Hoon Kim
Ki Seok Jang
In Gyoo Kim
Jin Hyuk OH
Sun Ae Kim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Electronics and Telecommunications Research Institute ETRI
Original Assignee
Electronics and Telecommunications Research Institute ETRI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020130033585A external-priority patent/KR20140025265A/ko
Application filed by Electronics and Telecommunications Research Institute ETRI filed Critical Electronics and Telecommunications Research Institute ETRI
Publication of FR2994617A1 publication Critical patent/FR2994617A1/fr
Application granted granted Critical
Publication of FR2994617B1 publication Critical patent/FR2994617B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
    • H01L31/035227—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum wires, or nanorods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035236—Superlattices; Multiple quantum well structures
    • H01L31/035254—Superlattices; Multiple quantum well structures including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table, e.g. Si-SiGe superlattices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0054—Processes for devices with an active region comprising only group IV elements
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/762—Nanowire or quantum wire, i.e. axially elongated structure having two dimensions of 100 nm or less
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/773—Nanoparticle, i.e. structure having three dimensions of 100 nm or less
    • Y10S977/774—Exhibiting three-dimensional carrier confinement, e.g. quantum dots
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/953—Detector using nanostructure
    • Y10S977/954—Of radiant energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
  • Light Receiving Elements (AREA)
FR1357797A 2012-08-20 2013-08-06 Photodetecteur a base de germanium a basse tension, a gain eleve et a vitesse elevee et son procede de fabrication Expired - Fee Related FR2994617B1 (fr)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
KR1020120090860 2012-08-20
KR20120090860 2012-08-20
KR1020130033585 2013-03-28
KR1020130033585A KR20140025265A (ko) 2012-08-20 2013-03-28 저전압 고이득 고속 광 검출기 및 그의 제조방법
KR1020130061169A KR101705725B1 (ko) 2012-08-20 2013-05-29 저전압 고이득 고속 광 검출기 및 그의 제조방법
KR1020130061169 2013-05-29

Publications (2)

Publication Number Publication Date
FR2994617A1 FR2994617A1 (fr) 2014-02-21
FR2994617B1 true FR2994617B1 (fr) 2018-02-23

Family

ID=50064922

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1357797A Expired - Fee Related FR2994617B1 (fr) 2012-08-20 2013-08-06 Photodetecteur a base de germanium a basse tension, a gain eleve et a vitesse elevee et son procede de fabrication

Country Status (2)

Country Link
US (1) US9171996B2 (fr)
FR (1) FR2994617B1 (fr)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9799689B2 (en) 2014-11-13 2017-10-24 Artilux Inc. Light absorption apparatus
WO2016077791A1 (fr) 2014-11-13 2016-05-19 Artilux Inc. Appareil d'absorption de lumière
DE102015108402B4 (de) 2015-05-28 2021-03-18 Infineon Technologies Ag Halbleiterbauelemente, ein Fluidsensor und ein Verfahren zum Bilden eines Halbleiterbauelements
US10680131B2 (en) * 2015-07-27 2020-06-09 Hewlett Packard Enterprise Development Lp Doped absorption devices
WO2017184226A1 (fr) * 2016-01-28 2017-10-26 Massachusetts Institute Of Technology Appareil, systèmes et procédés pour une détection de photon résonnant couplé à un guide d'ondes
US9806112B1 (en) * 2016-05-02 2017-10-31 Huawei Technologies Co., Ltd. Electrostatic discharge guard structure
CN106299015B (zh) * 2016-09-23 2017-11-21 中国科学院上海微系统与信息技术研究所 一种采用低维量子点倍增层的半导体雪崩光电探测器
CN109119509B (zh) * 2017-06-23 2023-10-27 松下知识产权经营株式会社 光检测元件
CN112335059B (zh) * 2018-07-11 2022-06-17 斯坦福国际研究院 无过量噪声的线性模式雪崩光电二极管
JP7422955B1 (ja) 2023-04-11 2024-01-26 三菱電機株式会社 半導体受光素子及び半導体受光素子の製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6074892A (en) * 1996-05-07 2000-06-13 Ciena Corporation Semiconductor hetero-interface photodetector
US6384462B1 (en) * 2000-12-06 2002-05-07 Nova Crystals, Inc. Planar hetero-interface photodetector
US7209623B2 (en) 2005-05-03 2007-04-24 Intel Corporation Semiconductor waveguide-based avalanche photodetector with separate absorption and multiplication regions
US7233051B2 (en) 2005-06-28 2007-06-19 Intel Corporation Germanium/silicon avalanche photodetector with separate absorption and multiplication regions
US20070262296A1 (en) * 2006-05-11 2007-11-15 Matthias Bauer Photodetectors employing germanium layers
US7741657B2 (en) 2006-07-17 2010-06-22 Intel Corporation Inverted planar avalanche photodiode
US7683397B2 (en) 2006-07-20 2010-03-23 Intel Corporation Semi-planar avalanche photodiode
US8320423B2 (en) * 2010-08-24 2012-11-27 Alvin Gabriel Stern Compact, all solid-state, avalanche photodiode emitter-detector pixel with electronically selectable, passive or active detection mode, for large-scale, high resolution, imaging focal plane arrays

Also Published As

Publication number Publication date
FR2994617A1 (fr) 2014-02-21
US20140048772A1 (en) 2014-02-20
US9171996B2 (en) 2015-10-27

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