FR2990562B1 - METHOD OF MAKING AN INSB INFRARED SENSOR - Google Patents

METHOD OF MAKING AN INSB INFRARED SENSOR

Info

Publication number
FR2990562B1
FR2990562B1 FR1254232A FR1254232A FR2990562B1 FR 2990562 B1 FR2990562 B1 FR 2990562B1 FR 1254232 A FR1254232 A FR 1254232A FR 1254232 A FR1254232 A FR 1254232A FR 2990562 B1 FR2990562 B1 FR 2990562B1
Authority
FR
France
Prior art keywords
making
infrared sensor
insb infrared
insb
sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1254232A
Other languages
French (fr)
Other versions
FR2990562A1 (en
Inventor
Herve Sik
Joel Fleury
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Societe Francaise de Detecteurs Infrarouges SOFRADIR SAS
Original Assignee
Sagem Defense Securite SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sagem Defense Securite SA filed Critical Sagem Defense Securite SA
Priority to FR1254232A priority Critical patent/FR2990562B1/en
Publication of FR2990562A1 publication Critical patent/FR2990562A1/en
Application granted granted Critical
Publication of FR2990562B1 publication Critical patent/FR2990562B1/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1463—Pixel isolation structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14694—The active layers comprising only AIIIBV compounds, e.g. GaAs, InP
FR1254232A 2012-05-09 2012-05-09 METHOD OF MAKING AN INSB INFRARED SENSOR Expired - Fee Related FR2990562B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR1254232A FR2990562B1 (en) 2012-05-09 2012-05-09 METHOD OF MAKING AN INSB INFRARED SENSOR

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1254232A FR2990562B1 (en) 2012-05-09 2012-05-09 METHOD OF MAKING AN INSB INFRARED SENSOR

Publications (2)

Publication Number Publication Date
FR2990562A1 FR2990562A1 (en) 2013-11-15
FR2990562B1 true FR2990562B1 (en) 2015-03-06

Family

ID=46826657

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1254232A Expired - Fee Related FR2990562B1 (en) 2012-05-09 2012-05-09 METHOD OF MAKING AN INSB INFRARED SENSOR

Country Status (1)

Country Link
FR (1) FR2990562B1 (en)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3483096A (en) * 1968-04-25 1969-12-09 Avco Corp Process for making an indium antimonide infrared detector contact
JPS5527657A (en) * 1978-08-19 1980-02-27 Fujitsu Ltd Method of manufacturing infrared ray detecting element
FR2464563A1 (en) * 1979-08-31 1981-03-06 Thomson Csf SEMICONDUCTOR PHOTODETECTOR DEVICE AND MANUFACTURING METHOD, AND IMAGE ANALYZER COMPRISING SUCH A DEVICE
FR2556135B1 (en) * 1983-12-02 1986-09-19 Thomson Csf INDIUM ANTIMONIURE PHOTO-DIODE AND MANUFACTURING METHOD
FR2557371B1 (en) * 1983-12-27 1987-01-16 Thomson Csf PHOTOSENSITIVE DEVICE COMPRISING BETWEEN THE DETECTORS OF THE RADIATION OPAQUE AREAS TO BE DETECTED, AND MANUFACTURING METHOD

Also Published As

Publication number Publication date
FR2990562A1 (en) 2013-11-15

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Legal Events

Date Code Title Description
TP Transmission of property

Owner name: SOFRADIR, FR

Effective date: 20131129

PLFP Fee payment

Year of fee payment: 5

PLFP Fee payment

Year of fee payment: 6

PLFP Fee payment

Year of fee payment: 7

PLFP Fee payment

Year of fee payment: 8

ST Notification of lapse

Effective date: 20210105