FR2984603B1 - Circuit integre comprenant un transformateur integre de type "balun" a plusieurs voies d'entree et de sortie. - Google Patents

Circuit integre comprenant un transformateur integre de type "balun" a plusieurs voies d'entree et de sortie.

Info

Publication number
FR2984603B1
FR2984603B1 FR1162017A FR1162017A FR2984603B1 FR 2984603 B1 FR2984603 B1 FR 2984603B1 FR 1162017 A FR1162017 A FR 1162017A FR 1162017 A FR1162017 A FR 1162017A FR 2984603 B1 FR2984603 B1 FR 2984603B1
Authority
FR
France
Prior art keywords
integrated
balun
type
integrated circuit
output paths
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1162017A
Other languages
English (en)
Other versions
FR2984603A1 (fr
Inventor
Floria Blanchet
Christophe Arricastres
Denis Pache
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Priority to FR1162017A priority Critical patent/FR2984603B1/fr
Priority to US13/707,736 priority patent/US9008603B2/en
Publication of FR2984603A1 publication Critical patent/FR2984603A1/fr
Application granted granted Critical
Publication of FR2984603B1 publication Critical patent/FR2984603B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F5/00—Coils
    • H01F5/003—Printed circuit coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F21/00—Variable inductances or transformers of the signal type
    • H01F21/12—Variable inductances or transformers of the signal type discontinuously variable, e.g. tapped
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F27/00—Details of transformers or inductances, in general
    • H01F27/28—Coils; Windings; Conductive connections
    • H01F27/2804—Printed windings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F30/00—Fixed transformers not covered by group H01F19/00
    • H01F30/04—Fixed transformers not covered by group H01F19/00 having two or more secondary windings, each supplying a separate load, e.g. for radio set power supplies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5227—Inductive arrangements or effects of, or between, wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/66—High-frequency adaptations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/01—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate comprising only passive thin-film or thick-film elements formed on a common insulating substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/10—Inductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P5/00—Coupling devices of the waveguide type
    • H01P5/08—Coupling devices of the waveguide type for linking dissimilar lines or devices
    • H01P5/10—Coupling devices of the waveguide type for linking dissimilar lines or devices for coupling balanced with unbalanced lines or devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/42—Balance/unbalance networks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64—Impedance arrangements
    • H01L2223/66—High-frequency adaptations
    • H01L2223/6644—Packaging aspects of high-frequency amplifiers
    • H01L2223/6655—Matching arrangements, e.g. arrangement of inductive and capacitive components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64—Impedance arrangements
    • H01L2223/66—High-frequency adaptations
    • H01L2223/6661—High-frequency adaptations for passive devices
    • H01L2223/6672—High-frequency adaptations for passive devices for integrated passive components, e.g. semiconductor device with passive components only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64—Impedance arrangements
    • H01L2223/66—High-frequency adaptations
    • H01L2223/6661—High-frequency adaptations for passive devices
    • H01L2223/6677—High-frequency adaptations for passive devices for antenna, e.g. antenna included within housing of semiconductor device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/01—Frequency selective two-port networks
    • H03H7/17—Structural details of sub-circuits of frequency selective networks
    • H03H7/1741—Comprising typical LC combinations, irrespective of presence and location of additional resistors
    • H03H7/1775—Parallel LC in shunt or branch path
FR1162017A 2011-12-20 2011-12-20 Circuit integre comprenant un transformateur integre de type "balun" a plusieurs voies d'entree et de sortie. Expired - Fee Related FR2984603B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR1162017A FR2984603B1 (fr) 2011-12-20 2011-12-20 Circuit integre comprenant un transformateur integre de type "balun" a plusieurs voies d'entree et de sortie.
US13/707,736 US9008603B2 (en) 2011-12-20 2012-12-07 Integrated circuit comprising an integrated transformer of the “BALUN” type with several input and output channels

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1162017A FR2984603B1 (fr) 2011-12-20 2011-12-20 Circuit integre comprenant un transformateur integre de type "balun" a plusieurs voies d'entree et de sortie.

Publications (2)

Publication Number Publication Date
FR2984603A1 FR2984603A1 (fr) 2013-06-21
FR2984603B1 true FR2984603B1 (fr) 2014-01-17

Family

ID=46044794

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1162017A Expired - Fee Related FR2984603B1 (fr) 2011-12-20 2011-12-20 Circuit integre comprenant un transformateur integre de type "balun" a plusieurs voies d'entree et de sortie.

Country Status (2)

Country Link
US (1) US9008603B2 (fr)
FR (1) FR2984603B1 (fr)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103928438B (zh) * 2014-04-04 2016-11-16 豪威科技(上海)有限公司 片上变压器、其版图结构、发射电路及收发电路
CN103957024B (zh) * 2014-04-18 2017-04-12 锐迪科科技有限公司 射频收发开关及其工作方法
TWI553676B (zh) * 2015-07-07 2016-10-11 瑞昱半導體股份有限公司 平面式變壓器及平衡不平衡轉換器之結構
CN105933011B (zh) * 2016-03-28 2019-03-26 豪威科技(上海)有限公司 功率合成器
DE102016110425B4 (de) * 2016-06-06 2023-07-20 X-Fab Semiconductor Foundries Gmbh Halbleitertransformator
US9843301B1 (en) 2016-07-14 2017-12-12 Northrop Grumman Systems Corporation Silicon transformer balun
TWI645428B (zh) * 2016-11-25 2018-12-21 瑞昱半導體股份有限公司 積體電感
WO2018198601A1 (fr) * 2017-04-26 2018-11-01 株式会社村田製作所 Filtre d'équilibrage
EP3471140B1 (fr) * 2017-10-11 2022-05-18 Nxp B.V. Circuit intégré comprenant une pluralité de composants comprenant un transformateur
NL2021654B1 (en) 2018-09-18 2020-05-07 Prodrive Tech Bv Balun transformer
US11069476B2 (en) * 2018-10-08 2021-07-20 Vayyar Imaging Ltd. Self-contained device with planar overlapping coils
US20220413091A1 (en) * 2021-06-28 2022-12-29 Texas Instruments Incorporated Field-aware metal fills for integrated circuit passive components
EP4350877A1 (fr) * 2022-10-05 2024-04-10 Nxp B.V. Déphaseur à zéro ou 180 degrés basé sur un auto-transformateur intégré
CN115881715B (zh) * 2023-02-09 2023-05-30 四川斯艾普电子科技有限公司 一种基于厚薄膜电路基板的lange电桥及其制备方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8049589B2 (en) * 2008-09-10 2011-11-01 Advanced Semiconductor Engineering, Inc. Balun circuit manufactured by integrate passive device process
EP2204877A1 (fr) * 2008-12-30 2010-07-07 STMicroelectronics (Tours) SAS Réglage d'un transformateur à changement de mode (balun)
US8791775B2 (en) * 2010-03-30 2014-07-29 Stats Chippac, Ltd. Semiconductor device and method of forming high-attenuation balanced band-pass filter

Also Published As

Publication number Publication date
FR2984603A1 (fr) 2013-06-21
US9008603B2 (en) 2015-04-14
US20130157587A1 (en) 2013-06-20

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Effective date: 20150831