FR2982077B1 - Triac a amplification de gachette - Google Patents

Triac a amplification de gachette

Info

Publication number
FR2982077B1
FR2982077B1 FR1159707A FR1159707A FR2982077B1 FR 2982077 B1 FR2982077 B1 FR 2982077B1 FR 1159707 A FR1159707 A FR 1159707A FR 1159707 A FR1159707 A FR 1159707A FR 2982077 B1 FR2982077 B1 FR 2982077B1
Authority
FR
France
Prior art keywords
triac
transistor
well
conductivity type
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1159707A
Other languages
English (en)
Other versions
FR2982077A1 (fr
Inventor
Yannick Hague
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics Tours SAS
Original Assignee
STMicroelectronics Tours SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics Tours SAS filed Critical STMicroelectronics Tours SAS
Priority to FR1159707A priority Critical patent/FR2982077B1/fr
Priority to US13/658,670 priority patent/US8912566B2/en
Publication of FR2982077A1 publication Critical patent/FR2982077A1/fr
Application granted granted Critical
Publication of FR2982077B1 publication Critical patent/FR2982077B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/747—Bidirectional devices, e.g. triacs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0638—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layer, e.g. with channel stopper
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7428—Thyristor-type devices, e.g. having four-zone regenerative action having an amplifying gate structure, e.g. cascade (Darlington) configuration

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
FR1159707A 2011-10-26 2011-10-26 Triac a amplification de gachette Expired - Fee Related FR2982077B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR1159707A FR2982077B1 (fr) 2011-10-26 2011-10-26 Triac a amplification de gachette
US13/658,670 US8912566B2 (en) 2011-10-26 2012-10-23 Gate amplification triac

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1159707A FR2982077B1 (fr) 2011-10-26 2011-10-26 Triac a amplification de gachette

Publications (2)

Publication Number Publication Date
FR2982077A1 FR2982077A1 (fr) 2013-05-03
FR2982077B1 true FR2982077B1 (fr) 2013-11-15

Family

ID=45094708

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1159707A Expired - Fee Related FR2982077B1 (fr) 2011-10-26 2011-10-26 Triac a amplification de gachette

Country Status (2)

Country Link
US (1) US8912566B2 (fr)
FR (1) FR2982077B1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106716643B (zh) * 2015-09-18 2020-12-22 新电元工业株式会社 半导体装置、以及半导体装置的制造方法
FR3076661A1 (fr) * 2018-01-05 2019-07-12 Stmicroelectronics (Tours) Sas Triode semiconductrice

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2750536B1 (fr) * 1996-06-28 1998-12-18 Sgs Thomson Microelectronics Reseau de triacs a gachettes referencees par rapport a une electrode commune de face opposee
FR2864343A1 (fr) * 2003-12-19 2005-06-24 St Microelectronics Sa Triac fonctionnant dans les quadrants q1 et q4

Also Published As

Publication number Publication date
US20130105855A1 (en) 2013-05-02
FR2982077A1 (fr) 2013-05-03
US8912566B2 (en) 2014-12-16

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FR2982077B1 (fr) Triac a amplification de gachette

Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20150630