FR2970611B1 - Étage de sortie forme dans et sur un substrat de type soi - Google Patents

Étage de sortie forme dans et sur un substrat de type soi

Info

Publication number
FR2970611B1
FR2970611B1 FR1150313A FR1150313A FR2970611B1 FR 2970611 B1 FR2970611 B1 FR 2970611B1 FR 1150313 A FR1150313 A FR 1150313A FR 1150313 A FR1150313 A FR 1150313A FR 2970611 B1 FR2970611 B1 FR 2970611B1
Authority
FR
France
Prior art keywords
transistor
soi
conducting state
output stage
type substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1150313A
Other languages
English (en)
Other versions
FR2970611A1 (fr
Inventor
Dimitri Soussan
Sylvain Majcherczak
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Priority to FR1150313A priority Critical patent/FR2970611B1/fr
Priority to US13/333,862 priority patent/US8629721B2/en
Publication of FR2970611A1 publication Critical patent/FR2970611A1/fr
Application granted granted Critical
Publication of FR2970611B1 publication Critical patent/FR2970611B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/217—Class D power amplifiers; Switching amplifiers
    • H03F3/2171—Class D power amplifiers; Switching amplifiers with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/01—Modifications for accelerating switching
    • H03K19/017—Modifications for accelerating switching in field-effect transistor circuits
    • H03K19/01707—Modifications for accelerating switching in field-effect transistor circuits in asynchronous circuits
    • H03K19/01721—Modifications for accelerating switching in field-effect transistor circuits in asynchronous circuits by means of a pull-up or down element
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/387—A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
    • H03K17/0412—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/04123—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/30—Modifications for providing a predetermined threshold before switching
    • H03K17/302—Modifications for providing a predetermined threshold before switching in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0018—Special modifications or use of the back gate voltage of a FET

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Amplifiers (AREA)
  • Logic Circuits (AREA)

Abstract

L'invention concerne un procédé de commande d'un étage d'amplification de sortie comprenant des premier (5) et second (7) transistors MOS de puissance complémentaires de type SOI, en série entre des premier (VDD ) et second (GND ) rails d'alimentation, ce procédé comprenant les étapes suivantes : relier le corps (B ) du premier transistor (5) au premier rail (VDD ) lorsque le premier transistor est maintenu dans un état non-passant ; relier le corps (B ) du second transistor (7) au second rail (GND ) lorsque le second transistor est maintenu dans un état non-passant ; et relier le corps (B , B ) de chacun des transistors (5, 7) au noeud (OUT) commun auxdits transistors, pendant les périodes de commutation de ce transistor d'un état non-passant vers un état passant.
FR1150313A 2011-01-14 2011-01-14 Étage de sortie forme dans et sur un substrat de type soi Expired - Fee Related FR2970611B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR1150313A FR2970611B1 (fr) 2011-01-14 2011-01-14 Étage de sortie forme dans et sur un substrat de type soi
US13/333,862 US8629721B2 (en) 2011-01-14 2011-12-21 Output stage formed inside and on top of an SOI-type substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1150313A FR2970611B1 (fr) 2011-01-14 2011-01-14 Étage de sortie forme dans et sur un substrat de type soi

Publications (2)

Publication Number Publication Date
FR2970611A1 FR2970611A1 (fr) 2012-07-20
FR2970611B1 true FR2970611B1 (fr) 2013-08-30

Family

ID=44000706

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1150313A Expired - Fee Related FR2970611B1 (fr) 2011-01-14 2011-01-14 Étage de sortie forme dans et sur un substrat de type soi

Country Status (2)

Country Link
US (1) US8629721B2 (fr)
FR (1) FR2970611B1 (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8803551B2 (en) * 2012-07-30 2014-08-12 Infineon Technologies Austria Ag Low supply voltage logic circuit
FR3009149A1 (fr) 2013-07-24 2015-01-30 St Microelectronics Sa Element a retard variable
DE102015205714A1 (de) * 2015-03-30 2016-10-06 Siemens Aktiengesellschaft Sendeverstärker zum Verstärken eines Signals in einem drahtlosen Übertragungssystem
EP3343763B1 (fr) 2016-12-29 2019-11-06 GN Hearing A/S Circuit d'attaque de sortie comprenant des commutateurs mos avec sollicitation de l'électrode de grille arriere réglable
US11616506B2 (en) 2018-09-26 2023-03-28 Nxp Usa, Inc. High speed buffer circuit

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH057149A (ja) * 1991-06-27 1993-01-14 Fujitsu Ltd 出力回路
JPH0786917A (ja) * 1993-09-14 1995-03-31 Sanyo Electric Co Ltd インバータ回路
US5644266A (en) * 1995-11-13 1997-07-01 Chen; Ming-Jer Dynamic threshold voltage scheme for low voltage CMOS inverter
JP4439031B2 (ja) * 1999-04-15 2010-03-24 株式会社ルネサステクノロジ 半導体装置

Also Published As

Publication number Publication date
FR2970611A1 (fr) 2012-07-20
US8629721B2 (en) 2014-01-14
US20120182070A1 (en) 2012-07-19

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20150930