EP1807556A4 - Methode de croissance par epitaxie de materiaux et de dispositifs a semi-conducteurs si-ge sur des substrats - Google Patents

Methode de croissance par epitaxie de materiaux et de dispositifs a semi-conducteurs si-ge sur des substrats

Info

Publication number
EP1807556A4
EP1807556A4 EP05746524A EP05746524A EP1807556A4 EP 1807556 A4 EP1807556 A4 EP 1807556A4 EP 05746524 A EP05746524 A EP 05746524A EP 05746524 A EP05746524 A EP 05746524A EP 1807556 A4 EP1807556 A4 EP 1807556A4
Authority
EP
European Patent Office
Prior art keywords
growing
substrates
devices
semiconductor materials
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP05746524A
Other languages
German (de)
English (en)
Other versions
EP1807556A2 (fr
Inventor
John Kouvetakis
Ignatius S T Tsong
Changwu Hu
John Tolle
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Arizona State University ASU
Original Assignee
University of Arizona
Arizona State University ASU
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from PCT/US2004/043854 external-priority patent/WO2006031240A1/fr
Application filed by University of Arizona, Arizona State University ASU filed Critical University of Arizona
Publication of EP1807556A2 publication Critical patent/EP1807556A2/fr
Publication of EP1807556A4 publication Critical patent/EP1807556A4/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/52—Alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Composite Materials (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
EP05746524A 2004-09-14 2005-04-08 Methode de croissance par epitaxie de materiaux et de dispositifs a semi-conducteurs si-ge sur des substrats Withdrawn EP1807556A4 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US61012004P 2004-09-14 2004-09-14
PCT/US2004/043854 WO2006031240A1 (fr) 2004-09-14 2004-12-31 Composés hybrides ayant des atomes de coeur de silicium et de germanium et procédé de synthèse de ceux-ci
US66077905P 2005-03-11 2005-03-11
PCT/US2005/012157 WO2006031257A2 (fr) 2004-09-14 2005-04-08 Methode de croissance par epitaxie de materiaux et de dispositifs a semi-conducteurs si-ge sur des substrats

Publications (2)

Publication Number Publication Date
EP1807556A2 EP1807556A2 (fr) 2007-07-18
EP1807556A4 true EP1807556A4 (fr) 2011-03-02

Family

ID=36060457

Family Applications (1)

Application Number Title Priority Date Filing Date
EP05746524A Withdrawn EP1807556A4 (fr) 2004-09-14 2005-04-08 Methode de croissance par epitaxie de materiaux et de dispositifs a semi-conducteurs si-ge sur des substrats

Country Status (3)

Country Link
EP (1) EP1807556A4 (fr)
KR (1) KR101060372B1 (fr)
WO (1) WO2006031257A2 (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008532294A (ja) 2005-03-11 2008-08-14 アリゾナ ボード オブ リージェンツ ア ボディー コーポレート アクティング オン ビハーフ オブ アリゾナ ステイト ユニバーシティ 新規なＧｅＳｉＳｎベースの化合物、テンプレート、及び半導体構造
CN101365648B (zh) * 2005-11-23 2012-09-26 亚利桑那董事会,代表亚利桑那州立大学行事的法人团体 硅锗氢化物以及制造和使用其的方法
WO2007062096A2 (fr) * 2005-11-23 2007-05-31 The Arizona Board Of Regents, A Body Corporate Acting On Behalf Of Arizona State University Nouveaux hydrures de silicium-germanium et leurs méthodes de production et d'utilisation
KR101014143B1 (ko) 2005-11-23 2011-02-14 아리조나 보드 오브 리전트스, 아리조나주의 아리조나 주립대 대행법인 규소-게르마늄 수소화물 및 그의 제조 및 사용 방법
EP2139680A4 (fr) * 2007-04-02 2012-01-04 Univ Arizona Nouveaux procédés de fabrication et d'utilisation d'halogénosilylgermanes
US7915104B1 (en) 2007-06-04 2011-03-29 The Arizona Board Of Regents, A Body Corporate Of The State Of Arizona Acting For And On Behalf Of Arizona State University Methods and compositions for preparing tensile strained Ge on Ge1-ySny buffered semiconductor substrates
WO2009112510A1 (fr) 2008-03-11 2009-09-17 Nxp B.V. Dispositif à point quantiques et procédé de fabrication de points quantiques à contrôle de position
WO2009123926A1 (fr) * 2008-04-02 2009-10-08 Arizona Board Of Regents, A Body Corporate Of The State Of Arizona Actg For & On Behalf ... Dépôt sélectif de couches uniques issues d'une source unique d'hydrures si-ge
KR102326316B1 (ko) 2015-04-10 2021-11-16 삼성전자주식회사 반도체 소자의 제조 방법

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4777023A (en) * 1986-02-18 1988-10-11 Solarex Corporation Preparation of silicon and germanium hydrides containing two different group 4A atoms
US4910153A (en) * 1986-02-18 1990-03-20 Solarex Corporation Deposition feedstock and dopant materials useful in the fabrication of hydrogenated amorphous silicon alloys for photovoltaic devices and other semiconductor devices

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7594967B2 (en) * 2002-08-30 2009-09-29 Amberwave Systems Corporation Reduction of dislocation pile-up formation during relaxed lattice-mismatched epitaxy

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4777023A (en) * 1986-02-18 1988-10-11 Solarex Corporation Preparation of silicon and germanium hydrides containing two different group 4A atoms
US4910153A (en) * 1986-02-18 1990-03-20 Solarex Corporation Deposition feedstock and dopant materials useful in the fabrication of hydrogenated amorphous silicon alloys for photovoltaic devices and other semiconductor devices

Non-Patent Citations (5)

* Cited by examiner, † Cited by third party
Title
BAUER MATTHEW ET AL: "Synthesis of ternary SiGeSn semiconductors on Si(100) via SnxGe1-x buffer layers", APPLIED PHYSICS LETTERS, AIP, AMERICAN INSTITUTE OF PHYSICS, MELVILLE, NY, US, vol. 83, no. 11, 15 September 2003 (2003-09-15), pages 2163 - 2165, XP012035089, ISSN: 0003-6951 *
CHANGWU HU ET AL: "Synthesis of highly coherent SiGe and Si4Ge nanostructures by molecular beam epitaxy of h3SiGeH3 and Ge(SiH3)4", CHEMISTRY OF MATERIALS, AMERICAN CHEMICAL SOCIETY, WASHINGTON, US, vol. 15, no. 19, 23 September 2003 (2003-09-23), pages 3569 - 3572, XP001521469, ISSN: 0897-4756, DOI: 10.1021/CM034477W *
GAIDUK P I ET AL: "Strain-relaxed SiGe/Si heteroepitaxial structures of low threading-dislocation density", THIN SOLID FILMS, ELSEVIER-SEQUOIA S.A. LAUSANNE, CH, vol. 367, no. 1-2, 1 May 2000 (2000-05-01), pages 120 - 125, XP004203895, ISSN: 0040-6090, DOI: 10.1016/S0040-6090(00)00660-X *
HAYNES T E ET AL: "Composition dependence of solid-phase epitaxy in silicon-germanium alloys: experiment and theory", PHYSICAL REVIEW, B. CONDENSED MATTER, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 51, no. 12, 15 March 1995 (1995-03-15), pages 7762 - 7771, XP009129828, ISSN: 0163-1829 *
WOLF S ED - WOLF S ET AL: "CHAPTER 6: Chemical Vapor Deposition of Amorphous and Polycrystalline thin Films", 1 January 1986, SILICON PROCESSING FOR THE VLSI ERA. VOLUME 1: PROCESS TECHNOLOGY, LATTICE PRESS, SUNSET BEACH, CALIFORNIA, USA, PAGE(S) 161 - 197, ISBN: 978-0-9616721-3-3, XP009134833 *

Also Published As

Publication number Publication date
EP1807556A2 (fr) 2007-07-18
KR20070083681A (ko) 2007-08-24
WO2006031257A2 (fr) 2006-03-23
WO2006031257A3 (fr) 2006-09-08
KR101060372B1 (ko) 2011-08-29

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Ipc: H01L 21/20 20060101AFI20110125BHEP

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