FR2970590B1 - Cellule mémoire volatile/non volatile sans charge - Google Patents
Cellule mémoire volatile/non volatile sans chargeInfo
- Publication number
- FR2970590B1 FR2970590B1 FR1150403A FR1150403A FR2970590B1 FR 2970590 B1 FR2970590 B1 FR 2970590B1 FR 1150403 A FR1150403 A FR 1150403A FR 1150403 A FR1150403 A FR 1150403A FR 2970590 B1 FR2970590 B1 FR 2970590B1
- Authority
- FR
- France
- Prior art keywords
- volatile
- charge
- memory cell
- volatile memory
- non volatile
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1659—Cell access
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1675—Writing or programming circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1693—Timing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0069—Writing or programming circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
- G11C14/0054—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a SRAM cell
- G11C14/0081—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a SRAM cell and the nonvolatile element is a magnetic RAM [MRAM] element or ferromagnetic cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
- G11C14/0054—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a SRAM cell
- G11C14/009—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a SRAM cell and the nonvolatile element is a resistive RAM element, i.e. programmable resistors, e.g. formed of phase change or chalcogenide material
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Static Random-Access Memory (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1150403A FR2970590B1 (fr) | 2011-01-19 | 2011-01-19 | Cellule mémoire volatile/non volatile sans charge |
US13/980,555 US20140078810A1 (en) | 2011-01-19 | 2012-01-19 | Loadless volatile/non-volatile memory cell |
EP12701338.1A EP2666164A1 (fr) | 2011-01-19 | 2012-01-19 | Cellule de mémoire volatile/non volatile sans charge |
PCT/EP2012/050798 WO2012098195A1 (fr) | 2011-01-19 | 2012-01-19 | Cellule de mémoire volatile/non volatile sans charge |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1150403A FR2970590B1 (fr) | 2011-01-19 | 2011-01-19 | Cellule mémoire volatile/non volatile sans charge |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2970590A1 FR2970590A1 (fr) | 2012-07-20 |
FR2970590B1 true FR2970590B1 (fr) | 2013-02-01 |
Family
ID=44358200
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1150403A Expired - Fee Related FR2970590B1 (fr) | 2011-01-19 | 2011-01-19 | Cellule mémoire volatile/non volatile sans charge |
Country Status (4)
Country | Link |
---|---|
US (1) | US20140078810A1 (fr) |
EP (1) | EP2666164A1 (fr) |
FR (1) | FR2970590B1 (fr) |
WO (1) | WO2012098195A1 (fr) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2970589B1 (fr) | 2011-01-19 | 2013-02-15 | Centre Nat Rech Scient | Cellule mémoire volatile/non volatile |
US8913422B2 (en) * | 2012-09-28 | 2014-12-16 | Intel Corporation | Decreased switching current in spin-transfer torque memory |
FR3004576B1 (fr) * | 2013-04-15 | 2019-11-29 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Cellule memoire avec memorisation de donnees non volatile |
FR3004577A1 (fr) | 2013-04-15 | 2014-10-17 | Commissariat Energie Atomique | |
FR3008219B1 (fr) | 2013-07-05 | 2016-12-09 | Commissariat Energie Atomique | Dispositif a memoire non volatile |
CN105849809B (zh) * | 2013-12-06 | 2018-08-28 | 英派尔科技开发有限公司 | 具有多个存储状态的非易失性sram |
FR3016465B1 (fr) * | 2014-01-10 | 2017-09-08 | Commissariat Energie Atomique | Memoire munie de cellules de memoire volatile et non volatile associees |
FR3016466B1 (fr) * | 2014-01-10 | 2017-09-08 | Commissariat Energie Atomique | Procede et circuit pour programmer des cellules de memoire non volatile d'une matrice memoire volatile / non volatile |
US9697897B2 (en) * | 2014-07-15 | 2017-07-04 | Nxp Usa, Inc. | Memory device with combined non-volatile memory (NVM) and volatile memory |
US9349440B1 (en) | 2014-12-11 | 2016-05-24 | Empire Technology Development Llc | Non-volatile SRAM with multiple storage states |
US9823874B2 (en) | 2015-02-19 | 2017-11-21 | Nxp Usa, Inc. | Memory device with combined non-volatile memory (NVM) and volatile memory |
US9715916B1 (en) * | 2016-03-24 | 2017-07-25 | Intel Corporation | Supply-switched dual cell memory bitcell |
US10756267B2 (en) * | 2017-04-11 | 2020-08-25 | National Chiao Tung University | Nonvolatile memory comprising variable resistance transistors and method for operating the same |
EP3591652A1 (fr) | 2018-07-02 | 2020-01-08 | Commissariat à l'Energie Atomique et aux Energies Alternatives | Cellule de mémoire de stockage magnétique compacte |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7599210B2 (en) * | 2005-08-19 | 2009-10-06 | Sony Corporation | Nonvolatile memory cell, storage device and nonvolatile logic circuit |
US7796417B1 (en) * | 2008-04-14 | 2010-09-14 | Altera Corporation | Memory circuits having programmable non-volatile resistors |
-
2011
- 2011-01-19 FR FR1150403A patent/FR2970590B1/fr not_active Expired - Fee Related
-
2012
- 2012-01-19 WO PCT/EP2012/050798 patent/WO2012098195A1/fr active Application Filing
- 2012-01-19 EP EP12701338.1A patent/EP2666164A1/fr not_active Withdrawn
- 2012-01-19 US US13/980,555 patent/US20140078810A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
US20140078810A1 (en) | 2014-03-20 |
WO2012098195A1 (fr) | 2012-07-26 |
EP2666164A1 (fr) | 2013-11-27 |
FR2970590A1 (fr) | 2012-07-20 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PLFP | Fee payment |
Year of fee payment: 5 |
|
ST | Notification of lapse |
Effective date: 20160930 |