FR2969315B1 - Procede et dispositif d'emission d'un faisceau laser dans un boitier - Google Patents

Procede et dispositif d'emission d'un faisceau laser dans un boitier

Info

Publication number
FR2969315B1
FR2969315B1 FR1060587A FR1060587A FR2969315B1 FR 2969315 B1 FR2969315 B1 FR 2969315B1 FR 1060587 A FR1060587 A FR 1060587A FR 1060587 A FR1060587 A FR 1060587A FR 2969315 B1 FR2969315 B1 FR 2969315B1
Authority
FR
France
Prior art keywords
laser
heat
component
emitting
laser beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1060587A
Other languages
English (en)
Other versions
FR2969315A1 (fr
Inventor
Bertrand Parvitte
Lilian Joly
Vincent Lecocq
Georges Durry
Virginie Zeninari
Regis Hamelin
Loarer Ronan Le
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centre National de la Recherche Scientifique CNRS
Universite de Reims Champagne Ardenne URCA
AEROVIA
Original Assignee
Centre National de la Recherche Scientifique CNRS
Universite de Reims Champagne Ardenne URCA
AEROVIA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre National de la Recherche Scientifique CNRS, Universite de Reims Champagne Ardenne URCA, AEROVIA filed Critical Centre National de la Recherche Scientifique CNRS
Priority to FR1060587A priority Critical patent/FR2969315B1/fr
Priority to PCT/FR2011/052970 priority patent/WO2012080652A1/fr
Priority to EP11811105.3A priority patent/EP2652845A1/fr
Priority to US13/994,996 priority patent/US20130287053A1/en
Publication of FR2969315A1 publication Critical patent/FR2969315A1/fr
Application granted granted Critical
Publication of FR2969315B1 publication Critical patent/FR2969315B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/02—Constructional details
    • H01S3/04—Arrangements for thermal management
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B7/00—Mountings, adjusting means, or light-tight connections, for optical elements
    • G02B7/008—Mountings, adjusting means, or light-tight connections, for optical elements with means for compensating for changes in temperature or for controlling the temperature; thermal stabilisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02253—Out-coupling of light using lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
    • H01S5/02326—Arrangements for relative positioning of laser diodes and optical components, e.g. grooves in the mount to fix optical fibres or lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
    • H01S5/02415—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling by using a thermo-electric cooler [TEC], e.g. Peltier element
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3401—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers
    • H01S5/3402—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers intersubband lasers, e.g. transitions within the conduction or valence bands
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Electromagnetism (AREA)
  • Nanotechnology (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Biophysics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Semiconductor Lasers (AREA)
FR1060587A 2010-12-15 2010-12-15 Procede et dispositif d'emission d'un faisceau laser dans un boitier Active FR2969315B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR1060587A FR2969315B1 (fr) 2010-12-15 2010-12-15 Procede et dispositif d'emission d'un faisceau laser dans un boitier
PCT/FR2011/052970 WO2012080652A1 (fr) 2010-12-15 2011-12-13 Procede et dispositif d'emission d'un faisceau laser dans un boitier
EP11811105.3A EP2652845A1 (fr) 2010-12-15 2011-12-13 Procede et dispositif d'emission d'un faisceau laser dans un boitier
US13/994,996 US20130287053A1 (en) 2010-12-15 2011-12-13 Method and device for emitting a laser beam in a housing

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1060587A FR2969315B1 (fr) 2010-12-15 2010-12-15 Procede et dispositif d'emission d'un faisceau laser dans un boitier

Publications (2)

Publication Number Publication Date
FR2969315A1 FR2969315A1 (fr) 2012-06-22
FR2969315B1 true FR2969315B1 (fr) 2012-12-14

Family

ID=43754967

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1060587A Active FR2969315B1 (fr) 2010-12-15 2010-12-15 Procede et dispositif d'emission d'un faisceau laser dans un boitier

Country Status (4)

Country Link
US (1) US20130287053A1 (fr)
EP (1) EP2652845A1 (fr)
FR (1) FR2969315B1 (fr)
WO (1) WO2012080652A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6967480B2 (ja) * 2018-03-30 2021-11-17 パナソニック デバイスＳｕｎｘ株式会社 レーザ発振器ユニット、レーザ加工装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5301060A (en) * 1989-11-30 1994-04-05 Minolta Camera Kabushiki Kaisha Optical element
JPH0534617A (ja) * 1991-07-26 1993-02-12 Minolta Camera Co Ltd レーザビーム走査光学装置
JP3320283B2 (ja) * 1995-09-27 2002-09-03 キヤノン株式会社 走査光学装置および画像形成装置
US7466734B1 (en) * 2005-06-15 2008-12-16 Daylight Solutions, Inc. Compact external cavity mid-IR optical lasers
US7492806B2 (en) * 2005-06-15 2009-02-17 Daylight Solutions, Inc. Compact mid-IR laser
US7535936B2 (en) * 2005-08-05 2009-05-19 Daylight Solutions, Inc. External cavity tunable compact Mid-IR laser
TWI269063B (en) * 2005-12-23 2006-12-21 E Pin Optical Industry Co Ltd Laser device
EP2440893B1 (fr) * 2009-06-12 2019-09-11 SpectraSensors, Inc. Mesures de l'absorbance optique avec auto-étalonnage et plage dynamique étendue

Also Published As

Publication number Publication date
US20130287053A1 (en) 2013-10-31
WO2012080652A1 (fr) 2012-06-21
FR2969315A1 (fr) 2012-06-22
EP2652845A1 (fr) 2013-10-23

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