FR2963426B1 - DEVICE AND METHOD FOR DETECTING GAS - Google Patents

DEVICE AND METHOD FOR DETECTING GAS

Info

Publication number
FR2963426B1
FR2963426B1 FR1156853A FR1156853A FR2963426B1 FR 2963426 B1 FR2963426 B1 FR 2963426B1 FR 1156853 A FR1156853 A FR 1156853A FR 1156853 A FR1156853 A FR 1156853A FR 2963426 B1 FR2963426 B1 FR 2963426B1
Authority
FR
France
Prior art keywords
insulator material
detecting gas
thickness
pore width
aperture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1156853A
Other languages
French (fr)
Other versions
FR2963426A1 (en
Inventor
Richard Fix
Denis Kunz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Original Assignee
Robert Bosch GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Publication of FR2963426A1 publication Critical patent/FR2963426A1/en
Application granted granted Critical
Publication of FR2963426B1 publication Critical patent/FR2963426B1/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403Cells and electrode assemblies
    • G01N27/414Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4141Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS specially adapted for gases

Abstract

The device has an insulator material (102) with predetermined thickness and applied on an electrically contactable endowed semiconductor material (100). An electrically contactable metal film (104) is applied on the insulator material, and comprises an aperture (106) with predetermined pore width. The pore width comprises a pre-defined ratio to the thickness of the insulator material. The insulator material lies in a region of the aperture. The thickness of the insulator material is smaller than the pore width. The metal film comprises catalytic properties. Independent claims are also included for the following: (1) a method for detecting gas (2) a computer program product having a set of instructions for executing a method for detecting gas.
FR1156853A 2010-07-30 2011-07-27 DEVICE AND METHOD FOR DETECTING GAS Active FR2963426B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE201010038725 DE102010038725A1 (en) 2010-07-30 2010-07-30 Gas detecting device for use as e.g. chemical FET, in metal insulator semiconductor component, has metal film comprising aperture with width that includes ratio to thickness of insulator material, where material lies in region of aperture

Publications (2)

Publication Number Publication Date
FR2963426A1 FR2963426A1 (en) 2012-02-03
FR2963426B1 true FR2963426B1 (en) 2013-12-06

Family

ID=45471157

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1156853A Active FR2963426B1 (en) 2010-07-30 2011-07-27 DEVICE AND METHOD FOR DETECTING GAS

Country Status (3)

Country Link
CN (1) CN102346161B (en)
DE (1) DE102010038725A1 (en)
FR (1) FR2963426B1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9683957B2 (en) * 2013-05-29 2017-06-20 Csir Field effect transistor and a gas detector including a plurality of field effect transistors
WO2019057910A1 (en) * 2017-09-21 2019-03-28 F. Hoffmann-La Roche Ag Use of a solid fraction sensor to evaluate a solid fraction of a target pharmaceutical sample and solid fraction sensor
CN113268866A (en) * 2021-05-13 2021-08-17 国网山东省电力公司电力科学研究院 Calculating C under the action of electric field5F10Method for adsorbing O insulating gas on copper surface

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5591321A (en) * 1993-11-02 1997-01-07 Electric Power Research Institute Detection of fluids with metal-insulator-semiconductor sensors
JPH1183777A (en) * 1997-09-12 1999-03-26 Fuji Electric Co Ltd Thin film gas sensor
JP2005331364A (en) * 2004-05-20 2005-12-02 Matsushita Electric Ind Co Ltd Hydrogen gas sensing film and hydrogen gas sensor
DE102006048906A1 (en) 2006-10-17 2008-04-30 Robert Bosch Gmbh Process for the stabilization and functionalization of porous metallic layers

Also Published As

Publication number Publication date
CN102346161A (en) 2012-02-08
DE102010038725A1 (en) 2012-02-02
CN102346161B (en) 2017-03-01
FR2963426A1 (en) 2012-02-03

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