FR2963426B1 - DEVICE AND METHOD FOR DETECTING GAS - Google Patents
DEVICE AND METHOD FOR DETECTING GASInfo
- Publication number
- FR2963426B1 FR2963426B1 FR1156853A FR1156853A FR2963426B1 FR 2963426 B1 FR2963426 B1 FR 2963426B1 FR 1156853 A FR1156853 A FR 1156853A FR 1156853 A FR1156853 A FR 1156853A FR 2963426 B1 FR2963426 B1 FR 2963426B1
- Authority
- FR
- France
- Prior art keywords
- insulator material
- detecting gas
- thickness
- pore width
- aperture
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
- G01N27/4141—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS specially adapted for gases
Abstract
The device has an insulator material (102) with predetermined thickness and applied on an electrically contactable endowed semiconductor material (100). An electrically contactable metal film (104) is applied on the insulator material, and comprises an aperture (106) with predetermined pore width. The pore width comprises a pre-defined ratio to the thickness of the insulator material. The insulator material lies in a region of the aperture. The thickness of the insulator material is smaller than the pore width. The metal film comprises catalytic properties. Independent claims are also included for the following: (1) a method for detecting gas (2) a computer program product having a set of instructions for executing a method for detecting gas.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE201010038725 DE102010038725A1 (en) | 2010-07-30 | 2010-07-30 | Gas detecting device for use as e.g. chemical FET, in metal insulator semiconductor component, has metal film comprising aperture with width that includes ratio to thickness of insulator material, where material lies in region of aperture |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2963426A1 FR2963426A1 (en) | 2012-02-03 |
FR2963426B1 true FR2963426B1 (en) | 2013-12-06 |
Family
ID=45471157
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1156853A Active FR2963426B1 (en) | 2010-07-30 | 2011-07-27 | DEVICE AND METHOD FOR DETECTING GAS |
Country Status (3)
Country | Link |
---|---|
CN (1) | CN102346161B (en) |
DE (1) | DE102010038725A1 (en) |
FR (1) | FR2963426B1 (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9683957B2 (en) * | 2013-05-29 | 2017-06-20 | Csir | Field effect transistor and a gas detector including a plurality of field effect transistors |
WO2019057910A1 (en) * | 2017-09-21 | 2019-03-28 | F. Hoffmann-La Roche Ag | Use of a solid fraction sensor to evaluate a solid fraction of a target pharmaceutical sample and solid fraction sensor |
CN113268866A (en) * | 2021-05-13 | 2021-08-17 | 国网山东省电力公司电力科学研究院 | Calculating C under the action of electric field5F10Method for adsorbing O insulating gas on copper surface |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5591321A (en) * | 1993-11-02 | 1997-01-07 | Electric Power Research Institute | Detection of fluids with metal-insulator-semiconductor sensors |
JPH1183777A (en) * | 1997-09-12 | 1999-03-26 | Fuji Electric Co Ltd | Thin film gas sensor |
JP2005331364A (en) * | 2004-05-20 | 2005-12-02 | Matsushita Electric Ind Co Ltd | Hydrogen gas sensing film and hydrogen gas sensor |
DE102006048906A1 (en) | 2006-10-17 | 2008-04-30 | Robert Bosch Gmbh | Process for the stabilization and functionalization of porous metallic layers |
-
2010
- 2010-07-30 DE DE201010038725 patent/DE102010038725A1/en not_active Ceased
-
2011
- 2011-07-27 FR FR1156853A patent/FR2963426B1/en active Active
- 2011-07-29 CN CN201110215725.9A patent/CN102346161B/en active Active
Also Published As
Publication number | Publication date |
---|---|
CN102346161A (en) | 2012-02-08 |
DE102010038725A1 (en) | 2012-02-02 |
CN102346161B (en) | 2017-03-01 |
FR2963426A1 (en) | 2012-02-03 |
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