FR2954589B1 - TRANSISTOR HAVING HIGH ELECTRONIC MOBILITY. - Google Patents

TRANSISTOR HAVING HIGH ELECTRONIC MOBILITY.

Info

Publication number
FR2954589B1
FR2954589B1 FR0906285A FR0906285A FR2954589B1 FR 2954589 B1 FR2954589 B1 FR 2954589B1 FR 0906285 A FR0906285 A FR 0906285A FR 0906285 A FR0906285 A FR 0906285A FR 2954589 B1 FR2954589 B1 FR 2954589B1
Authority
FR
France
Prior art keywords
transistor
high electronic
electronic mobility
mobility
electronic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0906285A
Other languages
French (fr)
Other versions
FR2954589A1 (en
Inventor
Erwan Morvan
Sylvain Delage
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Alcatel Lucent SAS
Original Assignee
Thales SA
Alcatel Lucent SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thales SA, Alcatel Lucent SAS filed Critical Thales SA
Priority to FR0906285A priority Critical patent/FR2954589B1/en
Priority to EP10196754.5A priority patent/EP2339635A3/en
Publication of FR2954589A1 publication Critical patent/FR2954589A1/en
Application granted granted Critical
Publication of FR2954589B1 publication Critical patent/FR2954589B1/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0642—Isolation within the component, i.e. internal isolation
    • H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
    • H01L29/0653—Dielectric regions, e.g. SiO2 regions, air gaps adjoining the input or output region of a field-effect device, e.g. the source or drain region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/30—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface
    • H01L29/32—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface the imperfections being within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/2003—Nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41758—Source or drain electrodes for field effect devices for lateral devices with structured layout for source or drain region, i.e. the source or drain region having cellular, interdigitated or ring structure or being curved or angular

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)
FR0906285A 2009-12-23 2009-12-23 TRANSISTOR HAVING HIGH ELECTRONIC MOBILITY. Expired - Fee Related FR2954589B1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR0906285A FR2954589B1 (en) 2009-12-23 2009-12-23 TRANSISTOR HAVING HIGH ELECTRONIC MOBILITY.
EP10196754.5A EP2339635A3 (en) 2009-12-23 2010-12-23 High electron mobility transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0906285A FR2954589B1 (en) 2009-12-23 2009-12-23 TRANSISTOR HAVING HIGH ELECTRONIC MOBILITY.

Publications (2)

Publication Number Publication Date
FR2954589A1 FR2954589A1 (en) 2011-06-24
FR2954589B1 true FR2954589B1 (en) 2012-12-28

Family

ID=42315700

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0906285A Expired - Fee Related FR2954589B1 (en) 2009-12-23 2009-12-23 TRANSISTOR HAVING HIGH ELECTRONIC MOBILITY.

Country Status (2)

Country Link
EP (1) EP2339635A3 (en)
FR (1) FR2954589B1 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2953167A1 (en) * 2014-06-05 2015-12-09 Nxp B.V. Semiconductor heterojunction device
US10199470B2 (en) 2016-11-08 2019-02-05 Raytheon Company Field effect transistor having staggered field effect transistor cells
US9882041B1 (en) * 2016-11-17 2018-01-30 Texas Instruments Incorporated HEMT having conduction barrier between drain fingertip and source
US10971612B2 (en) * 2019-06-13 2021-04-06 Cree, Inc. High electron mobility transistors and power amplifiers including said transistors having improved performance and reliability
US10923585B2 (en) 2019-06-13 2021-02-16 Cree, Inc. High electron mobility transistors having improved contact spacing and/or improved contact vias
CN112216736B (en) 2019-07-10 2024-04-30 联华电子股份有限公司 High electron mobility transistor and method for fabricating the same
CN113287200B (en) * 2021-04-12 2022-07-08 英诺赛科(苏州)科技有限公司 Semiconductor device and method for manufacturing the same
EP4213215A1 (en) * 2022-01-12 2023-07-19 Nexperia B.V. Multi-finger high-electron mobility transistor
FR3136111A1 (en) * 2022-05-30 2023-12-01 Commissariat A L'energie Atomique Et Aux Energies Alternatives ELECTRONIC COMPONENT BASED ON GALIUM NITRIDE DOPE P

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7135747B2 (en) * 2004-02-25 2006-11-14 Cree, Inc. Semiconductor devices having thermal spacers
JP5200323B2 (en) * 2005-12-22 2013-06-05 三菱電機株式会社 High frequency semiconductor device
JP2009111217A (en) * 2007-10-31 2009-05-21 Toshiba Corp Semiconductor device

Also Published As

Publication number Publication date
FR2954589A1 (en) 2011-06-24
EP2339635A2 (en) 2011-06-29
EP2339635A3 (en) 2013-07-10

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Legal Events

Date Code Title Description
PLFP Fee payment

Year of fee payment: 6

CA Change of address

Effective date: 20150521

CA Change of address

Effective date: 20150521

ST Notification of lapse

Effective date: 20160831