FR2949872B1 - Dispositif de modulation electro-optique - Google Patents

Dispositif de modulation electro-optique

Info

Publication number
FR2949872B1
FR2949872B1 FR1057116A FR1057116A FR2949872B1 FR 2949872 B1 FR2949872 B1 FR 2949872B1 FR 1057116 A FR1057116 A FR 1057116A FR 1057116 A FR1057116 A FR 1057116A FR 2949872 B1 FR2949872 B1 FR 2949872B1
Authority
FR
France
Prior art keywords
electro
modulation device
optical modulation
optical
modulation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1057116A
Other languages
English (en)
Other versions
FR2949872A1 (fr
Inventor
Gyungock Kim
Jeong Woo Park
Jongbum You
Sang Gi Kim
Sanghoon Kim
In Gyoo Kim
Jiho Joo
Duk Jun Kim
Dongwoo Suh
Sahnggi Park
Ki Seok Jang
Junghyung Pyo
Kap-Joong Kim
Do Won Kim
Dae Seo Park
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Electronics and Telecommunications Research Institute ETRI
Original Assignee
Electronics and Telecommunications Research Institute ETRI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020100066675A external-priority patent/KR101453473B1/ko
Application filed by Electronics and Telecommunications Research Institute ETRI filed Critical Electronics and Telecommunications Research Institute ETRI
Publication of FR2949872A1 publication Critical patent/FR2949872A1/fr
Application granted granted Critical
Publication of FR2949872B1 publication Critical patent/FR2949872B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/025—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction in an optical waveguide structure
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/06—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 integrated waveguide
    • G02F2201/063—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 integrated waveguide ridge; rib; strip loaded

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
FR1057116A 2009-09-08 2010-09-08 Dispositif de modulation electro-optique Expired - Fee Related FR2949872B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR20090084581 2009-09-08
KR1020100066675A KR101453473B1 (ko) 2009-09-08 2010-07-12 전기-광학 변조 소자

Publications (2)

Publication Number Publication Date
FR2949872A1 FR2949872A1 (fr) 2011-03-11
FR2949872B1 true FR2949872B1 (fr) 2017-10-06

Family

ID=43618479

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1057116A Expired - Fee Related FR2949872B1 (fr) 2009-09-08 2010-09-08 Dispositif de modulation electro-optique

Country Status (2)

Country Link
US (1) US8548281B2 (fr)
FR (1) FR2949872B1 (fr)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
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US8483520B2 (en) * 2009-02-25 2013-07-09 Nec Corporation Optical modulation structure and optical modulator
US8300990B2 (en) * 2010-04-14 2012-10-30 Oracle America, Inc. Slotted optical waveguide with electro-optic material
KR20130141850A (ko) * 2012-06-18 2013-12-27 광주과학기술원 광학 소자
JP6020096B2 (ja) * 2012-11-30 2016-11-02 富士通株式会社 光変調器及び光送信器
US9612459B2 (en) * 2014-07-01 2017-04-04 Laxense Inc. Silicon optical modulator using asymmetric shallow waveguide and the method to make the same
US11054674B2 (en) * 2018-10-24 2021-07-06 Rockley Photonics Limited PN-junction phase modulator in a large silicon waveguide platform
CN106154680A (zh) * 2015-04-14 2016-11-23 中兴通讯股份有限公司 一种硅基调制器及其制备方法
US11049851B2 (en) * 2017-06-08 2021-06-29 Luxtera Llc Method and system for selectively illuminated integrated photodetectors with configured launching and adaptive junction profile for bandwidth improvement
US10162200B1 (en) * 2017-06-19 2018-12-25 Taiwan Semiconductor Manufacturing Company Ltd. Electro-optic phase modulator and method of manufacturing the same
CN113629129B (zh) * 2020-05-07 2023-11-17 华为技术有限公司 Pn结及调制器
US20220357603A1 (en) * 2021-05-06 2022-11-10 Taiwan Semiconductor Manufacturing Co., Ltd. Waveguide having doped pillar structures to improve modulator efficiency
EP4357844A1 (fr) * 2022-10-20 2024-04-24 Nokia Solutions and Networks Oy Déphaseur optique en silicium à jonctions p-n en série

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CA978911A (en) * 1972-01-19 1975-12-02 The Gillette Company Apparatus for controlling discharge of material from a pressurized dispensing package
US4675518A (en) * 1982-03-05 1987-06-23 Omron Tateisi Electronics Co. Optical bistable device
US4904039A (en) * 1988-11-18 1990-02-27 The United States Of America As Represented By The Secretary Of The Air Force Electro-optic devices utilizing a sapphire substrate
US4997246A (en) * 1989-12-21 1991-03-05 International Business Machines Corporation Silicon-based rib waveguide optical modulator
JP2739666B2 (ja) 1992-06-11 1998-04-15 国際電信電話株式会社 光変調素子
CA2172278C (fr) 1993-09-21 2003-04-08 Stephen James Crampton Dispositif electro-optique
US6584239B1 (en) * 1998-05-22 2003-06-24 Bookham Technology Plc Electro optic modulator
GB2348293A (en) * 1999-03-25 2000-09-27 Bookham Technology Ltd Optical phase modulator
US7085443B1 (en) 2003-08-15 2006-08-01 Luxtera, Inc. Doping profiles in PN diode optical modulators
US7116853B2 (en) 2003-08-15 2006-10-03 Luxtera, Inc. PN diode optical modulators fabricated in rib waveguides
DE102004007251A1 (de) * 2004-02-10 2005-09-08 Infineon Technologies Ag Elektrooptischer Modulator
FR2868171B1 (fr) * 2004-03-29 2006-09-15 Univ Paris Sud Modulateur optoelectronique haute frequence integre sur silicium
US7280712B2 (en) 2005-08-04 2007-10-09 Intel Corporation Method and apparatus for phase shifiting an optical beam in an optical device
US7826688B1 (en) * 2005-10-21 2010-11-02 Luxtera, Inc. Enhancing the sensitivity of resonant optical modulating and switching devices
US20090214151A1 (en) * 2006-04-26 2009-08-27 Georgia Tech Research Corporation High Speed Optical Switch
KR100772538B1 (ko) 2006-12-05 2007-11-01 한국전자통신연구원 Ｐｎ 다이오드를 이용한 광전 소자 및 그 광전 소자를포함한 실리콘 ｉｃ
WO2008102511A1 (fr) * 2007-02-19 2008-08-28 Nec Corporation Élément de modulation de phase optique et modulateur optique l'utilisant
US7672553B2 (en) 2007-03-01 2010-03-02 Alcatel-Lucent Usa Inc. High speed semiconductor optical modulator
WO2009020432A1 (fr) * 2007-08-08 2009-02-12 Agency For Science, Technology And Research Dispositif électrooptique et son procédé de fabrication
US7474811B1 (en) * 2007-09-14 2009-01-06 Hewlett-Packard Development Company, L.P. Nanowire photonic apparatus employing optical field confinement
US7764850B2 (en) * 2008-01-25 2010-07-27 Hewlett-Packard Development Company, L.P. Optical modulator including electrically controlled ring resonator
JP2009258527A (ja) * 2008-04-21 2009-11-05 Hitachi Ltd 光学素子
US8149493B2 (en) * 2008-09-06 2012-04-03 Sifotonics Technologies (Usa) Inc. Electro-optic silicon modulator
US8488917B2 (en) * 2008-09-24 2013-07-16 Cornell University Electro-optic modulator
US7747122B2 (en) * 2008-09-30 2010-06-29 Intel Corporation Method and apparatus for high speed silicon optical modulation using PN diode
FR2937427B1 (fr) * 2008-10-17 2011-03-04 Commissariat Energie Atomique Procede de fabrication d'un modulateur electro-optique lateral sur silicium a zones implantees auto-alignees
US20110176762A1 (en) * 2008-11-13 2011-07-21 Junichi Fujikata Optical modulator and optical modulator fabrication method
US20120043527A1 (en) * 2010-08-19 2012-02-23 Agency For Science, Technology And Research Light emitting device

Also Published As

Publication number Publication date
FR2949872A1 (fr) 2011-03-11
US20110058764A1 (en) 2011-03-10
US8548281B2 (en) 2013-10-01

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