FR2928490B1 - Circuit integre comprenant des miroirs enterres a des profondeurs differentes - Google Patents

Circuit integre comprenant des miroirs enterres a des profondeurs differentes

Info

Publication number
FR2928490B1
FR2928490B1 FR0851494A FR0851494A FR2928490B1 FR 2928490 B1 FR2928490 B1 FR 2928490B1 FR 0851494 A FR0851494 A FR 0851494A FR 0851494 A FR0851494 A FR 0851494A FR 2928490 B1 FR2928490 B1 FR 2928490B1
Authority
FR
France
Prior art keywords
burial
mirrors
integrated circuit
different depths
depths
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0851494A
Other languages
English (en)
Other versions
FR2928490A1 (fr
Inventor
Perceval Coudrain
Philippe Coronel
Michel Marty
Matthieu Bopp
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Priority to FR0851494A priority Critical patent/FR2928490B1/fr
Priority to US12/398,872 priority patent/US7902621B2/en
Publication of FR2928490A1 publication Critical patent/FR2928490A1/fr
Application granted granted Critical
Publication of FR2928490B1 publication Critical patent/FR2928490B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14645—Colour imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
FR0851494A 2008-03-07 2008-03-07 Circuit integre comprenant des miroirs enterres a des profondeurs differentes Expired - Fee Related FR2928490B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR0851494A FR2928490B1 (fr) 2008-03-07 2008-03-07 Circuit integre comprenant des miroirs enterres a des profondeurs differentes
US12/398,872 US7902621B2 (en) 2008-03-07 2009-03-05 Integrated circuit comprising mirrors buried at different depths

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0851494A FR2928490B1 (fr) 2008-03-07 2008-03-07 Circuit integre comprenant des miroirs enterres a des profondeurs differentes

Publications (2)

Publication Number Publication Date
FR2928490A1 FR2928490A1 (fr) 2009-09-11
FR2928490B1 true FR2928490B1 (fr) 2011-04-15

Family

ID=39773127

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0851494A Expired - Fee Related FR2928490B1 (fr) 2008-03-07 2008-03-07 Circuit integre comprenant des miroirs enterres a des profondeurs differentes

Country Status (2)

Country Link
US (1) US7902621B2 (fr)
FR (1) FR2928490B1 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8995799B2 (en) * 2011-11-02 2015-03-31 Samsung Electronics Co., Ltd. Optoelectronic chips including coupler region and methods of manufacturing the same
US9097845B2 (en) * 2011-11-02 2015-08-04 Samsung Electronics Co., Ltd. Optoelectronic chips including coupler region and methods of manufacturing the same
FR3083644B1 (fr) * 2018-07-09 2021-05-14 St Microelectronics Crolles 2 Sas Capteur d'images

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3630999B2 (ja) * 1998-08-19 2005-03-23 富士通株式会社 半導体装置及びその製造方法
JP4350337B2 (ja) * 2001-04-27 2009-10-21 富士通マイクロエレクトロニクス株式会社 半導体装置
AU2003294822A1 (en) * 2002-12-09 2004-06-30 Quantum Semiconductor Llc Cmos image sensor
US6927432B2 (en) * 2003-08-13 2005-08-09 Motorola, Inc. Vertically integrated photosensor for CMOS imagers
US7755122B2 (en) * 2005-08-29 2010-07-13 United Microelectronics Corp. Complementary metal oxide semiconductor image sensor
KR100710207B1 (ko) * 2005-09-22 2007-04-20 동부일렉트로닉스 주식회사 씨모스 이미지 센서의 제조방법
US7964928B2 (en) * 2005-11-22 2011-06-21 Stmicroelectronics S.A. Photodetector with an improved resolution
KR100660714B1 (ko) * 2005-12-29 2006-12-21 매그나칩 반도체 유한회사 백사이드 조명 구조의 씨모스 이미지 센서 및 그의 제조방법
US7638852B2 (en) * 2006-05-09 2009-12-29 Taiwan Semiconductor Manufacturing Company, Ltd. Method of making wafer structure for backside illuminated color image sensor
CN104316987A (zh) * 2006-08-09 2015-01-28 光学解决方案纳米光子学有限责任公司 光学滤波器及其生产方法以及用于检查电磁辐射的装置
KR100745991B1 (ko) * 2006-08-11 2007-08-06 삼성전자주식회사 이미지 센서 및 그 제조 방법

Also Published As

Publication number Publication date
US7902621B2 (en) 2011-03-08
US20090256224A1 (en) 2009-10-15
FR2928490A1 (fr) 2009-09-11

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20141128