FR2911881B1 - METHOD FOR RECYCLING HELIUM AND DEVICE FOR IMPLEMENTING SAID METHOD - Google Patents

METHOD FOR RECYCLING HELIUM AND DEVICE FOR IMPLEMENTING SAID METHOD

Info

Publication number
FR2911881B1
FR2911881B1 FR0752930A FR0752930A FR2911881B1 FR 2911881 B1 FR2911881 B1 FR 2911881B1 FR 0752930 A FR0752930 A FR 0752930A FR 0752930 A FR0752930 A FR 0752930A FR 2911881 B1 FR2911881 B1 FR 2911881B1
Authority
FR
France
Prior art keywords
implementing
recycling helium
helium
recycling
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0752930A
Other languages
French (fr)
Other versions
FR2911881A1 (en
Inventor
Nune Patrick Kae
Sylvie Lazure
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Air Liquide SA
LAir Liquide SA pour lEtude et lExploitation des Procedes Georges Claude
Original Assignee
Air Liquide SA
LAir Liquide SA pour lEtude et lExploitation des Procedes Georges Claude
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Air Liquide SA, LAir Liquide SA pour lEtude et lExploitation des Procedes Georges Claude filed Critical Air Liquide SA
Priority to FR0752930A priority Critical patent/FR2911881B1/en
Priority to PCT/FR2008/050025 priority patent/WO2008107575A1/en
Priority to TW97101095A priority patent/TW200906713A/en
Publication of FR2911881A1 publication Critical patent/FR2911881A1/en
Application granted granted Critical
Publication of FR2911881B1 publication Critical patent/FR2911881B1/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B23/00—Noble gases; Compounds thereof
    • C01B23/001—Purification or separation processes of noble gases
    • C01B23/0036—Physical processing only
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B2210/00—Purification or separation of specific gases
    • C01B2210/0029—Obtaining noble gases
    • C01B2210/0031—Helium

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Analytical Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
FR0752930A 2007-01-29 2007-01-29 METHOD FOR RECYCLING HELIUM AND DEVICE FOR IMPLEMENTING SAID METHOD Expired - Fee Related FR2911881B1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FR0752930A FR2911881B1 (en) 2007-01-29 2007-01-29 METHOD FOR RECYCLING HELIUM AND DEVICE FOR IMPLEMENTING SAID METHOD
PCT/FR2008/050025 WO2008107575A1 (en) 2007-01-29 2008-01-08 Method for recycling helium and device for implementing the same
TW97101095A TW200906713A (en) 2007-01-29 2008-01-11 Helium recycling process and system for implementing it

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0752930A FR2911881B1 (en) 2007-01-29 2007-01-29 METHOD FOR RECYCLING HELIUM AND DEVICE FOR IMPLEMENTING SAID METHOD

Publications (2)

Publication Number Publication Date
FR2911881A1 FR2911881A1 (en) 2008-08-01
FR2911881B1 true FR2911881B1 (en) 2009-04-17

Family

ID=38515364

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0752930A Expired - Fee Related FR2911881B1 (en) 2007-01-29 2007-01-29 METHOD FOR RECYCLING HELIUM AND DEVICE FOR IMPLEMENTING SAID METHOD

Country Status (3)

Country Link
FR (1) FR2911881B1 (en)
TW (1) TW200906713A (en)
WO (1) WO2008107575A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102268741A (en) * 2011-07-13 2011-12-07 协鑫光电科技（张家港）有限公司 Heat exchange system for crystal growth
CN102277617A (en) * 2011-08-05 2011-12-14 中国电子科技集团公司第二研究所 Polycrystalline silicon ingot furnace online system capable of recycling argon and production process thereof
CN103866400B (en) * 2014-03-10 2016-06-15 陈勇 Sapphire crystal heat-exchanging method growth furnace helium cooling system

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5676751A (en) * 1996-01-22 1997-10-14 Memc Electronic Materials, Inc. Rapid cooling of CZ silicon crystal growth system
BR0211507A (en) * 2001-07-31 2004-09-14 Praxair Technology Inc Gas recovery system and process
JP2004014628A (en) * 2002-06-04 2004-01-15 Ulvac Japan Ltd Atmospheric pressure plasma processing system equipped with mechanism for collecting and reusing helium
FR2863922B1 (en) * 2003-12-17 2006-05-05 Air Liquide HIGH PERFORMANCE GAS RECYCLING METHOD FOR REFUELING OVEN

Also Published As

Publication number Publication date
WO2008107575A1 (en) 2008-09-12
FR2911881A1 (en) 2008-08-01
TW200906713A (en) 2009-02-16

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20100930