FR2906412B1 - Laser accordable a reseau de bragg distribue comportant une section de bragg en materiau massif contraint - Google Patents
Laser accordable a reseau de bragg distribue comportant une section de bragg en materiau massif contraintInfo
- Publication number
- FR2906412B1 FR2906412B1 FR0608334A FR0608334A FR2906412B1 FR 2906412 B1 FR2906412 B1 FR 2906412B1 FR 0608334 A FR0608334 A FR 0608334A FR 0608334 A FR0608334 A FR 0608334A FR 2906412 B1 FR2906412 B1 FR 2906412B1
- Authority
- FR
- France
- Prior art keywords
- bragg
- section
- constrainsible
- massive material
- network laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
- H01S5/06255—Controlling the frequency of the radiation
- H01S5/06256—Controlling the frequency of the radiation with DBR-structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
- H01S5/1209—Sampled grating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/3235—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0608334A FR2906412B1 (fr) | 2006-09-22 | 2006-09-22 | Laser accordable a reseau de bragg distribue comportant une section de bragg en materiau massif contraint |
US12/441,946 US20100158063A1 (en) | 2006-09-22 | 2007-09-19 | Tunable laser with a distributed bragg grating comprising a bragg section made of strained bulk material |
AT07820360T ATE488890T1 (de) | 2006-09-22 | 2007-09-19 | Abstimmbarer laser mit einem verteilten bragg- gitter mit einem aus verspannten bulk-material bestehenden bragg-teil |
DE602007010649T DE602007010649D1 (de) | 2006-09-22 | 2007-09-19 | Abstimmbarer laser mit einem verteilten bragg-gitter mit einem aus verspannten bulk-material bestehenden bragg-teil |
PCT/EP2007/059916 WO2008034852A1 (fr) | 2006-09-22 | 2007-09-19 | Laser accordable avec un réseau de bragg distribué comprenant une section de bragg faite de matériau en vrac contraint |
CN2007800351947A CN101517849B (zh) | 2006-09-22 | 2007-09-19 | 包括由应变的集合体材料制成的布拉格段的带分布式布拉格光栅的可调谐激光器 |
EP07820360A EP2067221B1 (fr) | 2006-09-22 | 2007-09-19 | Laser accordable avec un réseau de bragg distribué comprenant une section de bragg faite de matériau en vrac contraint |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0608334A FR2906412B1 (fr) | 2006-09-22 | 2006-09-22 | Laser accordable a reseau de bragg distribue comportant une section de bragg en materiau massif contraint |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2906412A1 FR2906412A1 (fr) | 2008-03-28 |
FR2906412B1 true FR2906412B1 (fr) | 2008-11-14 |
Family
ID=38050284
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR0608334A Active FR2906412B1 (fr) | 2006-09-22 | 2006-09-22 | Laser accordable a reseau de bragg distribue comportant une section de bragg en materiau massif contraint |
Country Status (7)
Country | Link |
---|---|
US (1) | US20100158063A1 (fr) |
EP (1) | EP2067221B1 (fr) |
CN (1) | CN101517849B (fr) |
AT (1) | ATE488890T1 (fr) |
DE (1) | DE602007010649D1 (fr) |
FR (1) | FR2906412B1 (fr) |
WO (1) | WO2008034852A1 (fr) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9093821B2 (en) * | 2013-12-11 | 2015-07-28 | Wisconsin Alumni Research Foundation | Substrate-emitting transverse magnetic polarized laser employing a metal/semiconductor distributed feedback grating for symmetric-mode operation |
CN105356292B (zh) * | 2015-11-30 | 2018-11-02 | 武汉电信器件有限公司 | 一种可调谐波长半导体激光器 |
EP3832817A1 (fr) * | 2019-12-03 | 2021-06-09 | nanoplus Nanosystems and Technologies GmbH | Laser semi-conducteur ainsi que procédé de fabrication d'un laser semi-conducteur |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3962716A (en) * | 1973-11-12 | 1976-06-08 | Bell Telephone Laboratories, Incorporated | Reduction of dislocations in multilayer structures of zinc-blend materials |
JP2746326B2 (ja) * | 1989-01-10 | 1998-05-06 | 株式会社日立製作所 | 半導体光素子 |
JPH04291304A (ja) * | 1991-03-20 | 1992-10-15 | Fujitsu Ltd | 光導波路および光信号の制御方法 |
US5200969A (en) * | 1991-10-18 | 1993-04-06 | Xerox Corporation | Switchable multiple wavelength semiconductor laser |
JPH0738204A (ja) * | 1993-07-20 | 1995-02-07 | Mitsubishi Electric Corp | 半導体光デバイス及びその製造方法 |
JP3195159B2 (ja) * | 1993-11-25 | 2001-08-06 | 株式会社東芝 | 光半導体素子 |
JPH09311220A (ja) * | 1996-03-19 | 1997-12-02 | Canon Inc | 異なる偏光依存性を持つ領域が交互に配置された回折格子、及びそれを用いた光半導体デバイス |
US6031860A (en) * | 1996-08-22 | 2000-02-29 | Canon Kabushiki Kaisha | Optical device capable of switching output intensity of light of predetermined polarized wave, optical transmitter using the device, network using the transmitter, and method of driving optical device |
US6959027B1 (en) * | 2000-05-26 | 2005-10-25 | Opticomp Corporation | High-power coherent arrays of vertical cavity surface emitting lasers |
GB2388707B (en) * | 2002-05-15 | 2005-06-22 | Bookham Technology Plc | Tunable laser |
US7356057B2 (en) * | 2002-10-31 | 2008-04-08 | Finisar Corporation | Wide temperature range vertical cavity surface emitting laser |
US7433567B2 (en) * | 2005-04-13 | 2008-10-07 | Fow-Sen Choa | Multi-quantum well optical waveguide with broadband optical gain |
-
2006
- 2006-09-22 FR FR0608334A patent/FR2906412B1/fr active Active
-
2007
- 2007-09-19 DE DE602007010649T patent/DE602007010649D1/de active Active
- 2007-09-19 CN CN2007800351947A patent/CN101517849B/zh not_active Expired - Fee Related
- 2007-09-19 EP EP07820360A patent/EP2067221B1/fr not_active Not-in-force
- 2007-09-19 US US12/441,946 patent/US20100158063A1/en not_active Abandoned
- 2007-09-19 WO PCT/EP2007/059916 patent/WO2008034852A1/fr active Application Filing
- 2007-09-19 AT AT07820360T patent/ATE488890T1/de not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP2067221A1 (fr) | 2009-06-10 |
CN101517849A (zh) | 2009-08-26 |
US20100158063A1 (en) | 2010-06-24 |
CN101517849B (zh) | 2011-01-12 |
FR2906412A1 (fr) | 2008-03-28 |
DE602007010649D1 (de) | 2010-12-30 |
ATE488890T1 (de) | 2010-12-15 |
EP2067221B1 (fr) | 2010-11-17 |
WO2008034852A1 (fr) | 2008-03-27 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
GC | Lien (pledge) constituted |
Effective date: 20140717 |
|
RG | Lien (pledge) cancelled |
Effective date: 20141016 |
|
PLFP | Fee payment |
Year of fee payment: 11 |
|
PLFP | Fee payment |
Year of fee payment: 12 |