FR2890802B1 - Procede de reduction du niveau d'intermodulation d'ordre 2 d'un transconducteur, et transconducteur correspondant - Google Patents

Procede de reduction du niveau d'intermodulation d'ordre 2 d'un transconducteur, et transconducteur correspondant

Info

Publication number
FR2890802B1
FR2890802B1 FR0509304A FR0509304A FR2890802B1 FR 2890802 B1 FR2890802 B1 FR 2890802B1 FR 0509304 A FR0509304 A FR 0509304A FR 0509304 A FR0509304 A FR 0509304A FR 2890802 B1 FR2890802 B1 FR 2890802B1
Authority
FR
France
Prior art keywords
transconducer
transconductive
reducing
order
intermodulation level
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR0509304A
Other languages
English (en)
Other versions
FR2890802A1 (fr
Inventor
Fabien Pousset
Frederic Rivoirard
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Priority to FR0509304A priority Critical patent/FR2890802B1/fr
Priority to US11/530,215 priority patent/US7542737B2/en
Publication of FR2890802A1 publication Critical patent/FR2890802A1/fr
Application granted granted Critical
Publication of FR2890802B1 publication Critical patent/FR2890802B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/32Modifications of amplifiers to reduce non-linear distortion
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/32Modifications of amplifiers to reduce non-linear distortion
    • H03F1/3211Modifications of amplifiers to reduce non-linear distortion in differential amplifiers
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45Differential amplifiers
    • H03F3/45071Differential amplifiers with semiconductor devices only
    • H03F3/45076Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/4508Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using bipolar transistors as the active amplifying circuit
    • H03F3/45085Long tailed pairs
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45Differential amplifiers
    • H03F3/45071Differential amplifiers with semiconductor devices only
    • H03F3/45479Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection
    • H03F3/45484Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with bipolar transistors as the active amplifying circuit
    • H03F3/45488Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with bipolar transistors as the active amplifying circuit by using feedback means
    • H03F3/45533Measuring at the common emitter circuit of the differential amplifier
    • H03F3/45538Controlling the input circuit of the differential amplifier
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2203/00Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/30Indexing scheme relating to single-ended push-pull [SEPP]; Phase-splitters therefor
    • H03F2203/30024Indexing scheme relating to single-ended push-pull [SEPP]; Phase-splitters therefor the SEPP bias current being controlled by a control signal from a feedback circuit
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2203/00Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45Indexing scheme relating to differential amplifiers
    • H03F2203/45154Indexing scheme relating to differential amplifiers the bias at the input of the amplifying transistors being controlled

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Input Circuits Of Receivers And Coupling Of Receivers And Audio Equipment (AREA)
  • Amplifiers (AREA)
FR0509304A 2005-09-13 2005-09-13 Procede de reduction du niveau d'intermodulation d'ordre 2 d'un transconducteur, et transconducteur correspondant Active FR2890802B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR0509304A FR2890802B1 (fr) 2005-09-13 2005-09-13 Procede de reduction du niveau d'intermodulation d'ordre 2 d'un transconducteur, et transconducteur correspondant
US11/530,215 US7542737B2 (en) 2005-09-13 2006-09-08 Method for reducing the 2nd order intermodulation level of a transconductor, and corresponding transconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0509304A FR2890802B1 (fr) 2005-09-13 2005-09-13 Procede de reduction du niveau d'intermodulation d'ordre 2 d'un transconducteur, et transconducteur correspondant

Publications (2)

Publication Number Publication Date
FR2890802A1 FR2890802A1 (fr) 2007-03-16
FR2890802B1 true FR2890802B1 (fr) 2007-12-07

Family

ID=36114662

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0509304A Active FR2890802B1 (fr) 2005-09-13 2005-09-13 Procede de reduction du niveau d'intermodulation d'ordre 2 d'un transconducteur, et transconducteur correspondant

Country Status (2)

Country Link
US (1) US7542737B2 (fr)
FR (1) FR2890802B1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100824785B1 (ko) * 2006-11-22 2008-04-24 삼성전자주식회사 아이피투 교정기 및 아이피투 교정방법
US8086207B2 (en) * 2007-03-19 2011-12-27 Qualcomm Incorporated Linear transconductor for RF communications

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5115206A (en) * 1990-11-08 1992-05-19 North American Philips Corp., Signetics Division Merged differential amplifier and current source
US6023196A (en) * 1998-08-03 2000-02-08 Lucent Technologies Inc. Bias circuit for transconductance amplifier
US6717463B2 (en) * 2000-11-03 2004-04-06 Qualcomm Incorporated Circuit for linearizing electronic devices
US6922556B2 (en) * 2002-08-30 2005-07-26 Microtune (Texas), L.P. System and method for establishing a bias current using a feedback loop

Also Published As

Publication number Publication date
FR2890802A1 (fr) 2007-03-16
US7542737B2 (en) 2009-06-02
US20070082631A1 (en) 2007-04-12

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