FR2887076B1 - Capteur d'image a substrat semiconducteur aminci avec metallisation arriere - Google Patents
Capteur d'image a substrat semiconducteur aminci avec metallisation arriereInfo
- Publication number
- FR2887076B1 FR2887076B1 FR0505929A FR0505929A FR2887076B1 FR 2887076 B1 FR2887076 B1 FR 2887076B1 FR 0505929 A FR0505929 A FR 0505929A FR 0505929 A FR0505929 A FR 0505929A FR 2887076 B1 FR2887076 B1 FR 2887076B1
- Authority
- FR
- France
- Prior art keywords
- imagine
- semiconductor substrate
- image sensor
- substrate image
- rear metallization
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000001465 metallisation Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14623—Optical shielding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0505929A FR2887076B1 (fr) | 2005-06-10 | 2005-06-10 | Capteur d'image a substrat semiconducteur aminci avec metallisation arriere |
PCT/EP2006/062043 WO2006131427A2 (fr) | 2005-06-10 | 2006-05-04 | Capteur d'image a substrat semiconducteur aminci avec metallisation arriere |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0505929A FR2887076B1 (fr) | 2005-06-10 | 2005-06-10 | Capteur d'image a substrat semiconducteur aminci avec metallisation arriere |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2887076A1 FR2887076A1 (fr) | 2006-12-15 |
FR2887076B1 true FR2887076B1 (fr) | 2007-08-31 |
Family
ID=35744691
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR0505929A Expired - Fee Related FR2887076B1 (fr) | 2005-06-10 | 2005-06-10 | Capteur d'image a substrat semiconducteur aminci avec metallisation arriere |
Country Status (2)
Country | Link |
---|---|
FR (1) | FR2887076B1 (fr) |
WO (1) | WO2006131427A2 (fr) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2910705B1 (fr) * | 2006-12-20 | 2009-02-27 | E2V Semiconductors Soc Par Act | Structure de plots de connexion pour capteur d'image sur substrat aminci |
FR3077678B1 (fr) | 2018-02-07 | 2022-10-21 | St Microelectronics Rousset | Procede de detection d'une atteinte a l'integrite d'un substrat semi-conducteur d'un circuit integre depuis sa face arriere, et dispositif correspondant |
CN112103304B (zh) * | 2020-09-22 | 2024-02-09 | 武汉新芯集成电路制造有限公司 | 背照式传感器及其制造方法、版图结构 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19838430C2 (de) * | 1998-08-24 | 2002-02-28 | Fraunhofer Ges Forschung | Verfahren zur Herstellung eines Arrays von Photodetektoren |
EP1284021A4 (fr) * | 2000-04-20 | 2008-08-13 | Digirad Corp | Fabrication de photodiodes illumin es sur l'envers courant de fuite faible |
FR2829291B1 (fr) * | 2001-08-31 | 2005-02-04 | Atmel Grenoble Sa | Procede de fabrication de capteur d'image couleur avec ouvertures de contact creusees avant amincissement |
FR2829292B1 (fr) * | 2001-08-31 | 2004-09-10 | Atmel Grenoble Sa | Procede de fabrication de capteur d'image couleur avec substrat de support soude plot sur plot |
US6933489B2 (en) * | 2002-05-10 | 2005-08-23 | Hamamatsu Photonics K.K. | Back illuminated photodiode array and method of manufacturing the same |
-
2005
- 2005-06-10 FR FR0505929A patent/FR2887076B1/fr not_active Expired - Fee Related
-
2006
- 2006-05-04 WO PCT/EP2006/062043 patent/WO2006131427A2/fr active Application Filing
Also Published As
Publication number | Publication date |
---|---|
WO2006131427A3 (fr) | 2007-03-29 |
WO2006131427A2 (fr) | 2006-12-14 |
FR2887076A1 (fr) | 2006-12-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PLFP | Fee payment |
Year of fee payment: 12 |
|
PLFP | Fee payment |
Year of fee payment: 13 |
|
PLFP | Fee payment |
Year of fee payment: 14 |
|
CD | Change of name or company name |
Owner name: TELEDYNE E2V SEMICONDUCTORS SAS, FR Effective date: 20180907 |
|
CJ | Change in legal form |
Effective date: 20180907 |
|
ST | Notification of lapse |
Effective date: 20200206 |