FR2879020B1 - units insulating Method shapes in a thin film semiconductor material oxidizable - Google Patents

units insulating Method shapes in a thin film semiconductor material oxidizable

Info

Publication number
FR2879020B1
FR2879020B1 FR0413061A FR0413061A FR2879020B1 FR 2879020 B1 FR2879020 B1 FR 2879020B1 FR 0413061 A FR0413061 A FR 0413061A FR 0413061 A FR0413061 A FR 0413061A FR 2879020 B1 FR2879020 B1 FR 2879020B1
Authority
FR
Grant status
Grant
Patent type
Prior art keywords
units
thin film
semiconductor material
film semiconductor
insulating method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0413061A
Other languages
French (fr)
Other versions
FR2879020A1 (en )
Inventor
Maud Vinet
Jean Charles Barbe
Bernard Previtali
Thierry Poiroux
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a l'Energie Atomique et aux Energies Alternatives
Original Assignee
Commissariat a l'Energie Atomique et aux Energies Alternatives
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Grant date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/762Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
FR0413061A 2004-12-08 2004-12-08 units insulating Method shapes in a thin film semiconductor material oxidizable Expired - Fee Related FR2879020B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR0413061A FR2879020B1 (en) 2004-12-08 2004-12-08 units insulating Method shapes in a thin film semiconductor material oxidizable

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
FR0413061A FR2879020B1 (en) 2004-12-08 2004-12-08 units insulating Method shapes in a thin film semiconductor material oxidizable
DE200560005611 DE602005005611T2 (en) 2004-12-08 2005-11-28 A process for the isolation of partial regions in a thin film of an oxidizable semiconductor material
EP20050354040 EP1670053B1 (en) 2004-12-08 2005-11-28 Isolation process of parts of a thin film in an oxydizable semiconductor material
US11291918 US7473588B2 (en) 2004-12-08 2005-12-02 Method for insulating patterns formed in a thin film of oxidizable semi-conducting material

Publications (2)

Publication Number Publication Date
FR2879020A1 true FR2879020A1 (en) 2006-06-09
FR2879020B1 true FR2879020B1 (en) 2007-05-04

Family

ID=34951323

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0413061A Expired - Fee Related FR2879020B1 (en) 2004-12-08 2004-12-08 units insulating Method shapes in a thin film semiconductor material oxidizable

Country Status (4)

Country Link
US (1) US7473588B2 (en)
EP (1) EP1670053B1 (en)
DE (1) DE602005005611T2 (en)
FR (1) FR2879020B1 (en)

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US3341753A (en) * 1964-10-21 1967-09-12 Texas Instruments Inc Metallic contacts for semiconductor devices
US4407696A (en) * 1982-12-27 1983-10-04 Mostek Corporation Fabrication of isolation oxidation for MOS circuit
US4819040A (en) * 1986-05-02 1989-04-04 Motorola, Inc. Epitaxial CMOS by oxygen implantation
US5149669A (en) * 1987-03-06 1992-09-22 Seiko Instruments Inc. Method of forming an isolation region in a semiconductor device
US4764248A (en) * 1987-04-13 1988-08-16 Cypress Semiconductor Corporation Rapid thermal nitridized oxide locos process
US4927780A (en) * 1989-10-02 1990-05-22 Motorola, Inc. Encapsulation method for localized oxidation of silicon
US5120675A (en) * 1990-06-01 1992-06-09 Texas Instruments Incorporated Method for forming a trench within a semiconductor layer of material
US5175123A (en) * 1990-11-13 1992-12-29 Motorola, Inc. High-pressure polysilicon encapsulated localized oxidation of silicon
US5360753A (en) * 1992-09-25 1994-11-01 Samsung Electronics Co., Ltd. Manufacturing method for a semiconductor isolation region
US5308445A (en) * 1991-10-23 1994-05-03 Rohm Co., Ltd. Method of manufacturing a semiconductor device having a semiconductor growth layer completely insulated from a substrate
DE4320062C2 (en) * 1992-07-10 2002-09-12 Lg Semicon Co Ltd A method for isolating individual elements in a semiconductor chip
KR960011861B1 (en) * 1993-06-10 1996-09-03 김광호 Semiconductor device isolation method
US5393692A (en) * 1993-07-28 1995-02-28 Taiwan Semiconductor Manufacturing Company Recessed side-wall poly plugged local oxidation
EP0641022B1 (en) * 1993-08-31 2006-05-17 Sgs-Thomson Microelectronics, Inc. Isolation structure and method for making same
KR970003731B1 (en) * 1993-10-14 1997-03-21 문정환 Method of forming the isolation elements on the semiconductor device
US6083810A (en) * 1993-11-15 2000-07-04 Lucent Technologies Integrated circuit fabrication process
JPH07201840A (en) * 1993-12-28 1995-08-04 Fujitsu Ltd Manufacturing for semiconductor device
US6127242A (en) * 1994-02-10 2000-10-03 Micron Technology, Inc. Method for semiconductor device isolation using oxygen and nitrogen ion implantations to reduce lateral encroachment
US5374585A (en) * 1994-05-09 1994-12-20 Motorola, Inc. Process for forming field isolation
US5432118A (en) * 1994-06-28 1995-07-11 Motorola, Inc. Process for forming field isolation
JP3422593B2 (en) * 1995-04-07 2003-06-30 三菱電機株式会社 A method of manufacturing a semiconductor device
US5607543A (en) * 1995-04-28 1997-03-04 Lucent Technologies Inc. Integrated circuit etching
US5658381A (en) * 1995-05-11 1997-08-19 Micron Technology, Inc. Method to form hemispherical grain (HSG) silicon by implant seeding followed by vacuum anneal
US5629230A (en) * 1995-08-01 1997-05-13 Micron Technology, Inc. Semiconductor processing method of forming field oxide regions on a semiconductor substrate utilizing a laterally outward projecting foot portion
US6967369B1 (en) * 1995-09-20 2005-11-22 Micron Technology, Inc. Semiconductor memory circuitry
US6043562A (en) * 1996-01-26 2000-03-28 Micron Technology, Inc. Digit line architecture for dynamic memory
FR2749977B1 (en) * 1996-06-14 1998-10-09 Commissariat Energie Atomique Mos transistor's quantum well and processes of manufacture thereof
US5902128A (en) * 1996-10-17 1999-05-11 Micron Technology, Inc. Process to improve the flow of oxide during field oxidation by fluorine doping
US5966621A (en) * 1996-11-14 1999-10-12 Micron Technology, Inc. Semiconductor processing method of forming field isolation oxide relative to a semiconductor substrate
US5894059A (en) * 1997-05-30 1999-04-13 Chartered Semiconductor Manufacturing Company Ltd. Dislocation free local oxidation of silicon with suppression of narrow space field oxide thinning effect
US5880004A (en) * 1997-06-10 1999-03-09 Winbond Electronics Corp. Trench isolation process
US6306727B1 (en) * 1997-08-18 2001-10-23 Micron Technology, Inc. Advanced isolation process for large memory arrays
US6090685A (en) * 1997-08-22 2000-07-18 Micron Technology Inc. Method of forming a LOCOS trench isolation structure
US5940720A (en) * 1997-08-29 1999-08-17 Samsung Electronics Co., Ltd. Methods of forming oxide isolation regions for integrated circuits substrates using mask and spacer
US6074933A (en) * 1997-09-05 2000-06-13 Lucent Technologies Inc. Integrated circuit fabrication
KR100247939B1 (en) * 1997-09-08 2000-03-15 윤종용 Semiconductor element isolating method using padoxidation by cvd
US6063690A (en) * 1997-12-29 2000-05-16 Utmc Microelectronics Systems Inc. Method for making recessed field oxide for radiation hardened microelectronics
JP3514178B2 (en) * 1998-09-16 2004-03-31 株式会社デンソー A method of manufacturing a semiconductor device
US6306726B1 (en) * 1999-08-30 2001-10-23 Micron Technology, Inc. Method of forming field oxide
US6261926B1 (en) * 2000-05-11 2001-07-17 Mosel Vitelic, Inc. Method for fabricating field oxide
US6566680B1 (en) * 2001-01-30 2003-05-20 Advanced Micro Devices, Inc. Semiconductor-on-insulator (SOI) tunneling junction transistor
KR100481073B1 (en) * 2002-07-09 2005-04-07 삼성전자주식회사 method for forming a thin film, and method for a gate electrode and a transistor using the same
DE10248723A1 (en) * 2002-10-18 2004-05-06 Infineon Technologies Ag Integrated circuit arrangement having capacitors and with preferably planar transistors and methods of manufacture
US20060091493A1 (en) * 2004-11-01 2006-05-04 Silicon-Based Technology Corp. LOCOS Schottky barrier contact structure and its manufacturing method

Also Published As

Publication number Publication date Type
FR2879020A1 (en) 2006-06-09 application
US20060121653A1 (en) 2006-06-08 application
DE602005005611T2 (en) 2009-04-30 grant
EP1670053B1 (en) 2008-03-26 grant
EP1670053A1 (en) 2006-06-14 application
US7473588B2 (en) 2009-01-06 grant
DE602005005611D1 (en) 2008-05-08 grant

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Effective date: 20160831