FR2871292B1 - METHOD FOR DEPOSITING HIGH DIELECTRIC CONSTANT FILM USING TETRAKIS (EHTYLAMINO) SILANE - Google Patents

METHOD FOR DEPOSITING HIGH DIELECTRIC CONSTANT FILM USING TETRAKIS (EHTYLAMINO) SILANE

Info

Publication number
FR2871292B1
FR2871292B1 FR0451101A FR0451101A FR2871292B1 FR 2871292 B1 FR2871292 B1 FR 2871292B1 FR 0451101 A FR0451101 A FR 0451101A FR 0451101 A FR0451101 A FR 0451101A FR 2871292 B1 FR2871292 B1 FR 2871292B1
Authority
FR
France
Prior art keywords
ehtylamino
tetrakis
silane
dielectric constant
high dielectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0451101A
Other languages
French (fr)
Other versions
FR2871292A1 (en
Inventor
Christian Dussarat
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Air Liquide SA
LAir Liquide SA pour lEtude et lExploitation des Procedes Georges Claude
Original Assignee
Air Liquide SA
LAir Liquide SA pour lEtude et lExploitation des Procedes Georges Claude
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Air Liquide SA, LAir Liquide SA pour lEtude et lExploitation des Procedes Georges Claude filed Critical Air Liquide SA
Priority to FR0451101A priority Critical patent/FR2871292B1/en
Publication of FR2871292A1 publication Critical patent/FR2871292A1/en
Application granted granted Critical
Publication of FR2871292B1 publication Critical patent/FR2871292B1/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
FR0451101A 2004-06-03 2004-06-03 METHOD FOR DEPOSITING HIGH DIELECTRIC CONSTANT FILM USING TETRAKIS (EHTYLAMINO) SILANE Expired - Fee Related FR2871292B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR0451101A FR2871292B1 (en) 2004-06-03 2004-06-03 METHOD FOR DEPOSITING HIGH DIELECTRIC CONSTANT FILM USING TETRAKIS (EHTYLAMINO) SILANE

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0451101A FR2871292B1 (en) 2004-06-03 2004-06-03 METHOD FOR DEPOSITING HIGH DIELECTRIC CONSTANT FILM USING TETRAKIS (EHTYLAMINO) SILANE

Publications (2)

Publication Number Publication Date
FR2871292A1 FR2871292A1 (en) 2005-12-09
FR2871292B1 true FR2871292B1 (en) 2006-07-28

Family

ID=34946055

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0451101A Expired - Fee Related FR2871292B1 (en) 2004-06-03 2004-06-03 METHOD FOR DEPOSITING HIGH DIELECTRIC CONSTANT FILM USING TETRAKIS (EHTYLAMINO) SILANE

Country Status (1)

Country Link
FR (1) FR2871292B1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10689405B2 (en) 2017-11-30 2020-06-23 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Titanium-containing film forming compositions for vapor deposition of titanium-containing films
US10584039B2 (en) 2017-11-30 2020-03-10 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Titanium-containing film forming compositions for vapor deposition of titanium-containing films

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003166060A (en) * 2001-11-30 2003-06-13 L'air Liquide Sa Pour L'etude & L'exploitation Des Procede S Georges Claude Method for manufacturing silicon nitride film, silicon oxynitride film, or silicon oxide film by cvd method
US20030111678A1 (en) * 2001-12-14 2003-06-19 Luigi Colombo CVD deposition of M-SION gate dielectrics
US7199023B2 (en) * 2002-08-28 2007-04-03 Micron Technology, Inc. Atomic layer deposited HfSiON dielectric films wherein each precursor is independendently pulsed

Also Published As

Publication number Publication date
FR2871292A1 (en) 2005-12-09

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Legal Events

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Effective date: 20100226