FR2870045A1 - Dispositif a heterojonction ferromagnetique/semi-conductrice a double canal - Google Patents

Dispositif a heterojonction ferromagnetique/semi-conductrice a double canal

Info

Publication number
FR2870045A1
FR2870045A1 FR0404957A FR0404957A FR2870045A1 FR 2870045 A1 FR2870045 A1 FR 2870045A1 FR 0404957 A FR0404957 A FR 0404957A FR 0404957 A FR0404957 A FR 0404957A FR 2870045 A1 FR2870045 A1 FR 2870045A1
Authority
FR
France
Prior art keywords
ferromagnetic
heterojunction device
double channel
semiconductor heterojunction
doping
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR0404957A
Other languages
English (en)
Other versions
FR2870045B1 (fr
Inventor
Henri Jaffres
Jean Marie George
Borge Vinter
Richard Mattana
Abdelmadjid Anane
Van Dau Frederic Nguyen
Albert Fert
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thales SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thales SA filed Critical Thales SA
Priority to FR0404957A priority Critical patent/FR2870045B1/fr
Priority to PCT/EP2005/052051 priority patent/WO2005109518A1/fr
Publication of FR2870045A1 publication Critical patent/FR2870045A1/fr
Application granted granted Critical
Publication of FR2870045B1 publication Critical patent/FR2870045B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66984—Devices using spin polarized carriers

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Hall/Mr Elements (AREA)

Abstract

La présente invention est relative à un dispositif à hétérojonction associant matériaux ferromagnétiques et semiconducteurs, et il est caractérisé en ce qu'il comporte une première couche semiconductrice (1) ayant un premier dopage, sur laquelle est formée une deuxième couche semiconductrice (2) ayant un deuxième dopage de nature différente de celle du premier et ayant une plus forte diffusion de spin que le premier, au moins deux électrodes ferromagnétiques (3, 4) et au moins une électrode conductrice (6).
FR0404957A 2004-05-07 2004-05-07 Dispositif a heterojonction ferromagnetique/semi-conductrice a double canal Expired - Fee Related FR2870045B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR0404957A FR2870045B1 (fr) 2004-05-07 2004-05-07 Dispositif a heterojonction ferromagnetique/semi-conductrice a double canal
PCT/EP2005/052051 WO2005109518A1 (fr) 2004-05-07 2005-05-04 Dispositif a heterojonction ferromagnetique/semi-conductrice a double canal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0404957A FR2870045B1 (fr) 2004-05-07 2004-05-07 Dispositif a heterojonction ferromagnetique/semi-conductrice a double canal

Publications (2)

Publication Number Publication Date
FR2870045A1 true FR2870045A1 (fr) 2005-11-11
FR2870045B1 FR2870045B1 (fr) 2006-07-21

Family

ID=34945759

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0404957A Expired - Fee Related FR2870045B1 (fr) 2004-05-07 2004-05-07 Dispositif a heterojonction ferromagnetique/semi-conductrice a double canal

Country Status (2)

Country Link
FR (1) FR2870045B1 (fr)
WO (1) WO2005109518A1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2190022B1 (fr) * 2008-11-20 2013-01-02 Hitachi Ltd. Dispositif de transport de charge à polarisation du spin
CN111276536B (zh) * 2020-02-07 2021-11-30 中国科学院半导体研究所 一种自旋场效应晶体管

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0255416A1 (fr) * 1986-06-30 1988-02-03 Thomson-Csf Dispositif semiconducteur à hétérojonction et double canal, son application à un transistor à effet de champ, et son application à un dispositif de transductance négative
US5654566A (en) * 1995-04-21 1997-08-05 Johnson; Mark B. Magnetic spin injected field effect transistor and method of operation
JP2002026417A (ja) * 2000-07-05 2002-01-25 Nippon Telegr & Teleph Corp <Ntt> スピン注入三端子素子

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0255416A1 (fr) * 1986-06-30 1988-02-03 Thomson-Csf Dispositif semiconducteur à hétérojonction et double canal, son application à un transistor à effet de champ, et son application à un dispositif de transductance négative
US5654566A (en) * 1995-04-21 1997-08-05 Johnson; Mark B. Magnetic spin injected field effect transistor and method of operation
JP2002026417A (ja) * 2000-07-05 2002-01-25 Nippon Telegr & Teleph Corp <Ntt> スピン注入三端子素子

Non-Patent Citations (5)

* Cited by examiner, † Cited by third party
Title
AWSCHALOM D D ET AL: "Spin dynamics and quantum transport in magnetic semiconductor quantum structures", JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, ELSEVIER, AMSTERDAM, NL, vol. 200, no. 1-3, October 1999 (1999-10-01), pages 130 - 147, XP004364011, ISSN: 0304-8853 *
HALL K C ET AL: "Nonmagnetic semiconductor spin transistor", APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 83, no. 14, 6 October 2003 (2003-10-06), pages 2937 - 2939, XP012035339, ISSN: 0003-6951 *
PATENT ABSTRACTS OF JAPAN vol. 2002, no. 05 3 May 2002 (2002-05-03) *
SUPRIYO DATTA ET AL: "ELECTRONIC ANALOG OF THE ELECTRO-OPTIC MODULATOR", APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 56, no. 7, 12 February 1990 (1990-02-12), pages 665 - 667, XP000126701, ISSN: 0003-6951 *
YEOM T H ET AL: "Nuclear magnetic relaxation studies of <69>Ga, <71>Ca, and <75>As nuclei in GaAs single crystals doped with paramagnetic impurities", SOLID STATE COMMUNICATIONS ELSEVIER USA, vol. 111, no. 4, 1999, pages 229 - 233, XP002309482, ISSN: 0038-1098 *

Also Published As

Publication number Publication date
FR2870045B1 (fr) 2006-07-21
WO2005109518A1 (fr) 2005-11-17

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