FR2870041B1 - Procede de fabrication d'un composant presentant un relief nanometrique et/ou des variations d'epaisseur, composant et ses derives issus de ce procede et leurs applications - Google Patents

Procede de fabrication d'un composant presentant un relief nanometrique et/ou des variations d'epaisseur, composant et ses derives issus de ce procede et leurs applications

Info

Publication number
FR2870041B1
FR2870041B1 FR0404904A FR0404904A FR2870041B1 FR 2870041 B1 FR2870041 B1 FR 2870041B1 FR 0404904 A FR0404904 A FR 0404904A FR 0404904 A FR0404904 A FR 0404904A FR 2870041 B1 FR2870041 B1 FR 2870041B1
Authority
FR
France
Prior art keywords
component
nanometer
relief
derivatives
applications
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0404904A
Other languages
English (en)
Other versions
FR2870041A1 (fr
Inventor
Dominique Aussere
Philippe Croguennoc
Sylvain Muckenhirn
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NANORAPTOR SA
Original Assignee
NANORAPTOR SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NANORAPTOR SA filed Critical NANORAPTOR SA
Priority to FR0404904A priority Critical patent/FR2870041B1/fr
Publication of FR2870041A1 publication Critical patent/FR2870041A1/fr
Application granted granted Critical
Publication of FR2870041B1 publication Critical patent/FR2870041B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00444—Surface micromachining, i.e. structuring layers on the substrate
    • B81C1/00492—Processes for surface micromachining not provided for in groups B81C1/0046 - B81C1/00484
FR0404904A 2004-05-06 2004-05-06 Procede de fabrication d'un composant presentant un relief nanometrique et/ou des variations d'epaisseur, composant et ses derives issus de ce procede et leurs applications Expired - Fee Related FR2870041B1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR0404904A FR2870041B1 (fr) 2004-05-06 2004-05-06 Procede de fabrication d'un composant presentant un relief nanometrique et/ou des variations d'epaisseur, composant et ses derives issus de ce procede et leurs applications

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0404904A FR2870041B1 (fr) 2004-05-06 2004-05-06 Procede de fabrication d'un composant presentant un relief nanometrique et/ou des variations d'epaisseur, composant et ses derives issus de ce procede et leurs applications

Publications (2)

Publication Number Publication Date
FR2870041A1 FR2870041A1 (fr) 2005-11-11
FR2870041B1 true FR2870041B1 (fr) 2006-11-03

Family

ID=34945571

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0404904A Expired - Fee Related FR2870041B1 (fr) 2004-05-06 2004-05-06 Procede de fabrication d'un composant presentant un relief nanometrique et/ou des variations d'epaisseur, composant et ses derives issus de ce procede et leurs applications

Country Status (1)

Country Link
FR (1) FR2870041B1 (fr)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2486251A1 (fr) * 1980-07-03 1982-01-08 Commissariat Energie Atomique Procede de realisation d'un reseau optique
US4743563A (en) * 1987-05-26 1988-05-10 Motorola, Inc. Process of controlling surface doping
US5814544A (en) * 1994-07-14 1998-09-29 Vlsi Technology, Inc. Forming a MOS transistor with a recessed channel
US6531410B2 (en) * 2001-02-27 2003-03-11 International Business Machines Corporation Intrinsic dual gate oxide MOSFET using a damascene gate process

Also Published As

Publication number Publication date
FR2870041A1 (fr) 2005-11-11

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