FR2861861B1 - Dispositif de generation d'une tension de reference bandgap autopolarise par un seul transistor - Google Patents

Dispositif de generation d'une tension de reference bandgap autopolarise par un seul transistor

Info

Publication number
FR2861861B1
FR2861861B1 FR0312827A FR0312827A FR2861861B1 FR 2861861 B1 FR2861861 B1 FR 2861861B1 FR 0312827 A FR0312827 A FR 0312827A FR 0312827 A FR0312827 A FR 0312827A FR 2861861 B1 FR2861861 B1 FR 2861861B1
Authority
FR
France
Prior art keywords
autopolarized
generating
reference voltage
bandgap reference
single transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0312827A
Other languages
English (en)
Other versions
FR2861861A1 (fr
Inventor
Bilal Manai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sierra Wireless SA
Original Assignee
Wavecom SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wavecom SA filed Critical Wavecom SA
Priority to FR0312827A priority Critical patent/FR2861861B1/fr
Priority to PCT/FR2004/002804 priority patent/WO2005043268A1/fr
Publication of FR2861861A1 publication Critical patent/FR2861861A1/fr
Application granted granted Critical
Publication of FR2861861B1 publication Critical patent/FR2861861B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/30—Regulators using the difference between the base-emitter voltages of two bipolar transistors operating at different current densities
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/245—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the temperature

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Power Engineering (AREA)
  • Control Of Electrical Variables (AREA)
FR0312827A 2003-10-31 2003-10-31 Dispositif de generation d'une tension de reference bandgap autopolarise par un seul transistor Expired - Fee Related FR2861861B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR0312827A FR2861861B1 (fr) 2003-10-31 2003-10-31 Dispositif de generation d'une tension de reference bandgap autopolarise par un seul transistor
PCT/FR2004/002804 WO2005043268A1 (fr) 2003-10-31 2004-10-29 Dispositif de generation d'une tension de reference bandgap autopolarise par un seul transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0312827A FR2861861B1 (fr) 2003-10-31 2003-10-31 Dispositif de generation d'une tension de reference bandgap autopolarise par un seul transistor

Publications (2)

Publication Number Publication Date
FR2861861A1 FR2861861A1 (fr) 2005-05-06
FR2861861B1 true FR2861861B1 (fr) 2006-02-10

Family

ID=34429819

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0312827A Expired - Fee Related FR2861861B1 (fr) 2003-10-31 2003-10-31 Dispositif de generation d'une tension de reference bandgap autopolarise par un seul transistor

Country Status (2)

Country Link
FR (1) FR2861861B1 (fr)
WO (1) WO2005043268A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9733662B2 (en) * 2011-07-27 2017-08-15 Nxp B.V. Fast start up, ultra-low power bias generator for fast wake up oscillators

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2641626B1 (fr) * 1989-01-11 1991-06-14 Sgs Thomson Microelectronics Generateur de tension de reference stable
US5336986A (en) * 1992-02-07 1994-08-09 Crosspoint Solutions, Inc. Voltage regulator for field programmable gate arrays
KR0183549B1 (ko) * 1996-07-10 1999-04-15 정명식 온도 보상형 정전류원 회로
US6377114B1 (en) * 2000-02-25 2002-04-23 National Semiconductor Corporation Resistor independent current generator with moderately positive temperature coefficient and method

Also Published As

Publication number Publication date
FR2861861A1 (fr) 2005-05-06
WO2005043268A1 (fr) 2005-05-12

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20150630