FR2854488A1 - Dispositif d'evaluation de cellules pouvant etre programmees une seule fois - Google Patents

Dispositif d'evaluation de cellules pouvant etre programmees une seule fois

Info

Publication number
FR2854488A1
FR2854488A1 FR0403978A FR0403978A FR2854488A1 FR 2854488 A1 FR2854488 A1 FR 2854488A1 FR 0403978 A FR0403978 A FR 0403978A FR 0403978 A FR0403978 A FR 0403978A FR 2854488 A1 FR2854488 A1 FR 2854488A1
Authority
FR
France
Prior art keywords
threshold values
memory cell
programmable memory
time programmable
electrical characteristic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR0403978A
Other languages
English (en)
Other versions
FR2854488B1 (fr
Inventor
Marcus Janke
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
Original Assignee
Infineon Technologies AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies AG filed Critical Infineon Technologies AG
Publication of FR2854488A1 publication Critical patent/FR2854488A1/fr
Application granted granted Critical
Publication of FR2854488B1 publication Critical patent/FR2854488B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G11C29/50004—Marginal testing, e.g. race, voltage or current testing of threshold voltage
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM

Landscapes

  • Read Only Memory (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Tests Of Electronic Circuits (AREA)

Abstract

Procédé d'évaluation de cellules pouvant être programmées une seule fois, dans lequel on détermine une grandeur électrique caractéristique d'une cellule,on compare cette grandeur caractéristique à une première valeur (A) de seuil et à une deuxième valeur (B) de seuil et,- lorsque la grandeur caractéristique est comprise entre la première valeur (A) et la deuxième valeur (B), on produit un signal, qui signale un état de programmation indéterminé.
FR0403978A 2003-04-29 2004-04-16 Dispositif d'evaluation de cellules pouvant etre programmees une seule fois Expired - Fee Related FR2854488B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE10319273A DE10319273B4 (de) 2003-04-29 2003-04-29 Verfahren und Vorrichtung zum Bewerten und Nachprogrammieren von einmal programmierbaren Zellen

Publications (2)

Publication Number Publication Date
FR2854488A1 true FR2854488A1 (fr) 2004-11-05
FR2854488B1 FR2854488B1 (fr) 2007-02-09

Family

ID=33154481

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0403978A Expired - Fee Related FR2854488B1 (fr) 2003-04-29 2004-04-16 Dispositif d'evaluation de cellules pouvant etre programmees une seule fois

Country Status (3)

Country Link
US (1) US6999333B2 (fr)
DE (1) DE10319273B4 (fr)
FR (1) FR2854488B1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8223575B2 (en) * 2007-03-08 2012-07-17 Taiwan Semiconductor Manufacturing Co., Ltd. Multi-level electrical fuse using one programming device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0252325A2 (fr) * 1986-06-11 1988-01-13 Fujitsu Limited Dispositif à semi-conducteurs comprenant un circuit de fusibles et un circuit de détection pour détecter des états des fusibles dans le circuit de fusibles
US5635854A (en) * 1994-05-24 1997-06-03 Philips Electronics North America Corporation Programmable logic integrated circuit including verify circuitry for classifying fuse link states as validly closed, validly open or invalid
DE19920721A1 (de) * 1999-05-05 2000-11-23 Siemens Ag Schaltungsanordnung zur Programmierung eines elektrisch programmierbaren Elementes
US20040042274A1 (en) * 2002-04-04 2004-03-04 Low Khim L. Methods and systems for programmable memory using silicided poly-silicon fuses

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10026251A1 (de) 2000-05-26 2001-12-06 Infineon Technologies Ag Anordnung zur Programmierung einer Fuse
US6396742B1 (en) * 2000-07-28 2002-05-28 Silicon Storage Technology, Inc. Testing of multilevel semiconductor memory
EP1233453A3 (fr) 2001-02-19 2005-03-23 Kawasaki Microelectronics, Inc. Circuit intégré semi-conducteur comprenant un anti-fusible, procédé de fabrication, et procédé d'écriture de données dans le même
JP2003007821A (ja) 2001-06-18 2003-01-10 Mitsubishi Electric Corp 半導体装置およびその製造方法
DE10135775B4 (de) * 2001-07-23 2004-02-19 Infineon Technologies Ag Verfahren und Vorrichtungen zum Prüfen und Auslesen der Programmierung einer Hohlraumfuse

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0252325A2 (fr) * 1986-06-11 1988-01-13 Fujitsu Limited Dispositif à semi-conducteurs comprenant un circuit de fusibles et un circuit de détection pour détecter des états des fusibles dans le circuit de fusibles
US5635854A (en) * 1994-05-24 1997-06-03 Philips Electronics North America Corporation Programmable logic integrated circuit including verify circuitry for classifying fuse link states as validly closed, validly open or invalid
DE19920721A1 (de) * 1999-05-05 2000-11-23 Siemens Ag Schaltungsanordnung zur Programmierung eines elektrisch programmierbaren Elementes
US20040042274A1 (en) * 2002-04-04 2004-03-04 Low Khim L. Methods and systems for programmable memory using silicided poly-silicon fuses

Also Published As

Publication number Publication date
FR2854488B1 (fr) 2007-02-09
DE10319273A1 (de) 2004-12-09
DE10319273B4 (de) 2008-11-06
US6999333B2 (en) 2006-02-14
US20040252540A1 (en) 2004-12-16

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