FR2844636B1 - Capteur dual magnetique et thermique obtenu selon la technologie des semi-conducteurs - Google Patents
Capteur dual magnetique et thermique obtenu selon la technologie des semi-conducteursInfo
- Publication number
- FR2844636B1 FR2844636B1 FR0211484A FR0211484A FR2844636B1 FR 2844636 B1 FR2844636 B1 FR 2844636B1 FR 0211484 A FR0211484 A FR 0211484A FR 0211484 A FR0211484 A FR 0211484A FR 2844636 B1 FR2844636 B1 FR 2844636B1
- Authority
- FR
- France
- Prior art keywords
- obtained according
- thermal sensor
- semiconductor technology
- sensor obtained
- dual magnetic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000009977 dual effect Effects 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/01—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using semiconducting elements having PN junctions
- G01K7/015—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using semiconducting elements having PN junctions using microstructures, e.g. made of silicon
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/07—Hall effect devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
- H10N52/101—Semiconductor Hall-effect devices
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Hall/Mr Elements (AREA)
- Measuring Magnetic Variables (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0211484A FR2844636B1 (fr) | 2002-09-13 | 2002-09-13 | Capteur dual magnetique et thermique obtenu selon la technologie des semi-conducteurs |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0211484A FR2844636B1 (fr) | 2002-09-13 | 2002-09-13 | Capteur dual magnetique et thermique obtenu selon la technologie des semi-conducteurs |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2844636A1 FR2844636A1 (fr) | 2004-03-19 |
FR2844636B1 true FR2844636B1 (fr) | 2005-08-19 |
Family
ID=31897432
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR0211484A Expired - Fee Related FR2844636B1 (fr) | 2002-09-13 | 2002-09-13 | Capteur dual magnetique et thermique obtenu selon la technologie des semi-conducteurs |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR2844636B1 (fr) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102901575B (zh) * | 2012-10-25 | 2016-09-07 | 上海华虹宏力半导体制造有限公司 | 基于cmos工艺制作的半导体器件的温度测量方法 |
CN102928103B (zh) * | 2012-10-25 | 2016-09-07 | 上海华虹宏力半导体制造有限公司 | 基于ldmos工艺制作的半导体器件的温度测量方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CH663686A5 (de) * | 1984-04-18 | 1987-12-31 | Landis & Gyr Ag | Verfahren und schaltung zur temperaturkompensation eines stromgespeisten hallelementes. |
-
2002
- 2002-09-13 FR FR0211484A patent/FR2844636B1/fr not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
FR2844636A1 (fr) | 2004-03-19 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PLFP | Fee payment |
Year of fee payment: 14 |
|
ST | Notification of lapse |
Effective date: 20170531 |