CN102901575B - 基于cmos工艺制作的半导体器件的温度测量方法 - Google Patents
基于cmos工艺制作的半导体器件的温度测量方法 Download PDFInfo
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- CN102901575B CN102901575B CN201210413619.6A CN201210413619A CN102901575B CN 102901575 B CN102901575 B CN 102901575B CN 201210413619 A CN201210413619 A CN 201210413619A CN 102901575 B CN102901575 B CN 102901575B
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CN102901575B true CN102901575B (zh) | 2016-09-07 |
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CN107607214B (zh) * | 2017-09-13 | 2019-12-24 | 上海华力微电子有限公司 | 一种温度的测量方法及电迁移的测试方法 |
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JPS5672320A (en) * | 1979-11-19 | 1981-06-16 | Mitsubishi Electric Corp | Temperature measuring device |
FR2844636B1 (fr) * | 2002-09-13 | 2005-08-19 | Socomec Sa | Capteur dual magnetique et thermique obtenu selon la technologie des semi-conducteurs |
US6906399B2 (en) * | 2002-11-04 | 2005-06-14 | Delphi Technologies, Inc. | Integrated circuit including semiconductor power device and electrically isolated thermal sensor |
CN101915624B (zh) * | 2010-05-06 | 2012-07-25 | 北京大学 | 一种实时监测晶体管温度的热表征方法及结构 |
DE102010029147B4 (de) * | 2010-05-20 | 2012-04-12 | Semikron Elektronik Gmbh & Co. Kg | Verfahren zur Ermittlung der Temperatur eines Leistungshalbleiters |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HONGLI SEMICONDUCTOR MANUFACTURE CO LTD, SHANGHAI Effective date: 20140423 |
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Effective date of registration: 20140423 Address after: 201203 Shanghai Zhangjiang hi tech park Zuchongzhi Road No. 1399 Applicant after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201203 Shanghai Guo Shou Jing Road, Pudong New Area Zhangjiang hi tech Park No. 818 Applicant before: Hongli Semiconductor Manufacture Co., Ltd., Shanghai |
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