FR2840689A1 - Integrated optical waveguide having channel/optical substrate and guide layer having index above substrate and waveguide having adaptation layer extending either side channel. - Google Patents

Integrated optical waveguide having channel/optical substrate and guide layer having index above substrate and waveguide having adaptation layer extending either side channel. Download PDF

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Publication number
FR2840689A1
FR2840689A1 FR0206975A FR0206975A FR2840689A1 FR 2840689 A1 FR2840689 A1 FR 2840689A1 FR 0206975 A FR0206975 A FR 0206975A FR 0206975 A FR0206975 A FR 0206975A FR 2840689 A1 FR2840689 A1 FR 2840689A1
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Prior art keywords
substrate
channel
layer
adaptation
waveguide
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FR2840689B1 (en
Inventor
Stephane Tisserand
Marc Hubert
Laurent Roux
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Silios Technologies SA
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Silios Technologies SA
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Priority to FR0206975A priority Critical patent/FR2840689B1/en
Priority to AU2003255641A priority patent/AU2003255641A1/en
Priority to PCT/FR2003/001682 priority patent/WO2003104865A2/en
Publication of FR2840689A1 publication Critical patent/FR2840689A1/en
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    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/13Integrated optical circuits characterised by the manufacturing method
    • G02B6/134Integrated optical circuits characterised by the manufacturing method by substitution by dopant atoms
    • G02B6/1347Integrated optical circuits characterised by the manufacturing method by substitution by dopant atoms using ion implantation
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122Basic optical elements, e.g. light-guiding paths
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12083Constructional arrangements
    • G02B2006/12097Ridge, rib or the like

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Optical Integrated Circuits (AREA)

Abstract

The optical waveguide has a channel (12) on an optical substrate (11). The refractive index of the channel is higher than that of the substrate. There is a guide layer (15) on the channel with an index higher than the substrate. The waveguide has an adaptation layer (13,14) extending on either side of the channel.

Description

possede une entretoise n 4 support du bras de rglage n 4 cette entretoisehas a spacer no.4 support for the adjustment arm no.4 this spacer

est articulee en rotation.is articulated in rotation.

t Guide d'onde comportant un canal et une couche d'adaptation La presente invention concerne un guide d'onde comportant un canal et  t Waveguide comprising a channel and an adaptation layer The present invention relates to a waveguide comprising a channel and

une couche d'adaptation.an adaptation layer.

Le domaine de ['invention est celui des dispositifs optiques integres sur substrat, domaine dans lequel un element essentiel est le guide d'onde qui assure la fonction de transport de l'energie lumineuse necessaire a l'acheminement d'un signal optique. Par reference a la demande de brevet FR 2 818 390, un tel guide est realise en creant un canal par implantation ionique du substrat a travers un masque, puis en deposant une couche guidante  The field of the invention is that of integrated optical devices on a substrate, a field in which an essential element is the waveguide which performs the function of transporting the light energy necessary for the routing of an optical signal. With reference to patent application FR 2 818 390, such a guide is produced by creating a channel by ion implantation of the substrate through a mask, then by depositing a guiding layer.

o sur le canal.o on the canal.

Le guide n'etant pas limite au seul canal mais plutot constitue par ['association de ce canal et de la couche guidante, il presente alors des dimensions en adequation avec celle du coeur d'une fibre optique. En effet, les  The guide not being limited to the single channel but rather constituted by the association of this channel and the guiding layer, it then has dimensions in adequacy with that of the core of an optical fiber. Indeed, the

dispositifs integres vent souvent interconnectes avec des fibres optiques.  integrated devices are often interconnected with optical fibers.

La structure geometrique du guide fait que celui-ci est susceptible de  The geometrical structure of the guide means that it is likely to

presenter un comportement qui differe selon l'etat de polarisation de la lumiere.  exhibit behavior that differs depending on the state of polarization of the light.

Cette sensibilite a la polarisation est d'autant plus forte que la dose d'implantation est elevee. L'ecart entre les indices effectifs de refraction en mode transverse electrique (TE) et en mode transverse magnetique (TM) augmente a  This sensitivity to polarization is all the stronger the higher the implantation dose. The difference between the effective indices of refraction in transverse electrical mode (TE) and in transverse magnetic mode (TM) increases to

mesure que l'indice de refraction du canal augmente.  as the channel refraction index increases.

La sensibilite a la polarisation est un parametre critique pour tout dispositif raccorde a une fibre optique. En effet, lorsque la fibre est contrainte, notamment lorsqu'elle est courbee, cette courbure conduit a une modification de la polarisation de la lumiere qui y circule. II n'est done pas possible de conna^'tre I'etat de polarisation de la lumiere entrant dans le dispositif. II s'ensuit que ce d ispos itif d o it presenter u ne sensib il ite a la polarisation qu i so it la pl u s red u ite  The sensitivity to polarization is a critical parameter for any device connected to an optical fiber. Indeed, when the fiber is stressed, in particular when it is bent, this curvature leads to a modification of the polarization of the light which circulates there. It is therefore not possible to know the state of polarization of the light entering the device. It follows that this it is necessary to present a sensitivity to the polarization that is most redu ite.

possible de sorte que l'integrite du signal optique soit preservee au mieux.  possible so that the integrity of the optical signal is best preserved.

En particulier, les pertes radiatives dans les courbures dependent du contraste d'indice lateral ANeff, contraste qui se definit comme l'ecart entre I'indice effectif de refraction defini au niveau du canal et celui defini en dehors de ce canal. Ce contraste depend lui-meme du mode de polarisation. II est souhaitable que le contraste lateral ANeffTE en mode TE soit le plus proche possible du contraste lateral ANeffTM en mode TM pour que le rayon de courbure  In particular, the radiative losses in the bends depend on the contrast of lateral index ANeff, contrast which is defined as the difference between the effective index of refraction defined at the level of the channel and that defined outside this channel. This contrast itself depends on the polarization mode. It is desirable that the ANeffTE lateral contrast in TE mode is as close as possible to the ANeffTM lateral contrast in TM mode so that the radius of curvature

minimum admissible par le guide soit le meme en mode TE qu'en mode TM.  minimum admissible by the guide is the same in TE mode as in TM mode.

3 A titre d'exemple, on considere un guide caracterise comme suit: longueur d'onde: 1 550 nm, - indice de refraction du substrat: 1,444, indice de refraction de la couche guidante: 1,45,  3 As an example, we consider a guide characterized as follows: wavelength: 1550 nm, - refractive index of the substrate: 1.444, refractive index of the guiding layer: 1.45,

- epaisseur de la couche guidante: 5,lm.  - thickness of the guide layer: 5, lm.

Si l'on veut que l'ecart entre le contraste lateral NeffTE en mode TE et le contraste lateral ANeffTM en mode TM soit inferieur a 0,001, les contrastes  If you want the difference between the NeffTE lateral contrast in TE mode and the ANeffTM lateral contrast in TM mode to be less than 0.001, the contrasts

optiques que l'on peut obtenir vent assez falbles.  optics that we can get quite falble wind.

Pour une epaisseur du canal de 0,05pm,1'indice de refraction du canal doit etre inferieur a 1,70, ce qui conduit a un contraste lateral ANeffTE en mode TE de 0,003 et a un contraste lateral ANeffTM en mode TM de 0,002, le rayon de  For a channel thickness of 0.05pm, the refraction index of the channel must be less than 1.70, which leads to an ANeffTE lateral contrast in TE mode of 0.003 and to an ANeffTM lateral contrast in TM mode of 0.002, the radius of

o courbure minimum etant alors estime entre 20 et 25 mm.  o minimum curvature then being estimated between 20 and 25 mm.

Pour une epaisseur du canal de O,10m,1'indice de refraction du canal doit etre inferieur a 1,60, ce qui conduit a un contraste lateral ANeffTE en mode TE de 0,004 et a un contraste lateral ANeffTM en mode TM de 0,003, le rayon de  For a channel thickness of 0.10 m, the refraction index of the channel must be less than 1.60, which leads to an ANeffTE lateral contrast in TE mode of 0.004 and to an ANeffTM lateral contrast in TM mode of 0.003, the radius of

courbure minimum etant alors estime entre 15 et 20 mm.  minimum curvature then being estimated between 15 and 20 mm.

Pour une epaisseur du canal de 0,20,lm,1'indice de refraction du canal doit etre inferieur a 1,55, ce qui conduit a un contraste lateral ANeffTE en mode TE de 0,006 et a un contraste lateral ANeffTM en mode TM de 0,005, le rayon de  For a channel thickness of 0.20 lm, the refraction index of the channel must be less than 1.55, which leads to an ANeffTE lateral contrast in TE mode of 0.006 and to an ANeffTM lateral contrast in TM mode of 0.005, the radius of

courbure minimum etant alors estime entre 10 et 15 mm.  minimum curvature then being estimated between 10 and 15 mm.

La presente invention a ainsi pour objet un guide d'onde optique presentant une sensibilite reduite a la polarisation et un contraste d'indice lateral eleve. Selon ['invention, un guide d'onde comporte un canal sur un substrat optique, I'indice de refraction de ce canal etant superieur a celui du substrat, comporte aussi au moins une couche guidante agencee sur ce canal, l'indice de s cette couche guidante etant superieur a celui du substrat; de plus, le guide d'onde comporte une couche d'adaptation s'etendant lateralement de part et  The present invention thus relates to an optical waveguide having a reduced sensitivity to polarization and a contrast of high lateral index. According to the invention, a waveguide comprises a channel on an optical substrate, the refractive index of this channel being greater than that of the substrate, also comprises at least one guiding layer arranged on this channel, the index of s this guiding layer being greater than that of the substrate; moreover, the waveguide comprises an adaptation layer extending laterally on the side and

d'autre du canal.across the canal.

Cette couche d'adaptation a en effet pour but de reduire la sensibilite du  The purpose of this adaptation layer is to reduce the sensitivity of the

guide a la polarisation.polarization guide.

o De preference, I'epaisseur de la couche d'adaptation est inferieure a celle du canal. Par exemple, elle est comprise entre 20% et 60% de l'epaisseur  o Preferably, the thickness of the adaptation layer is less than that of the channel. For example, it is between 20% and 60% of the thickness

du canal.of the canal.

La couche d'adaptation se decomposant en deux bandes jouxtant chacune un bord lateral du canal, la largeur de chacune de ces bandes est au  The adaptation layer decomposing into two bands each adjoining a lateral edge of the channel, the width of each of these bands is at

moins egale a celle du canal.less equal to that of the canal.

D'autre part, I'indice de refraction de la couche d'adaptation est superieur  On the other hand, the refraction index of the adaptation layer is higher

a celui du canal.to that of the canal.

Avantageusement, le guide d'onde comporte au moins une couche de recouvrement disposee sur la couche guidante, I'indice de cette couche de recouvrement etant inferieur a celui de la couche guidante et a celui du canal. Selon un mode de realisation privilegie, le canal est integre dans le substrat. De meme, la couche d'adaptation est elle aussi integree dans le substrat. o Alternativement, le canal fait saillie sur le substrat et, par consequent la  Advantageously, the waveguide comprises at least one covering layer disposed on the guiding layer, the index of this covering layer being lower than that of the guiding layer and that of the channel. According to a preferred embodiment, the channel is integrated into the substrate. Likewise, the adaptation layer is also integrated into the substrate. o Alternatively, the channel protrudes from the substrate and therefore the

couche d'adaptation peut elle aussi etre disposee en saillie sur le substrat.  adaptation layer can also be arranged projecting on the substrate.

II est preferable que l'indice de la couche guidante vaille celui du substrat  It is preferable that the index of the guiding layer corresponds to that of the substrate

multiplie par un facteur superieur a 1,001.  multiplies by a factor greater than 1,001.

Selon une caracteristique additionnelle du guide d'onde, I'epaisseur de  According to an additional characteristic of the waveguide, the thickness of

I'ensemble des couches guidantes est comprise entre 1 et 20 microns.  All of the guiding layers are between 1 and 20 microns.

De preference, le canal et eventuellement la couche d'adaptation  Preferably, the channel and possibly the adaptation layer

resultent d'une implantation ionique dans le substrat.  result from ion implantation in the substrate.

A titre indicatif, la face du substrat sur laquelle est realisee ['implantation  As an indication, the face of the substrate on which the implantation is carried out

ionique est en dioxyde de silicium.ionic is made of silicon dioxide.

2 o L'invention vise egalement une methode de fabrication d'un guide d'onde sur un substrat optique comprenant: - une etape de definition d'un canal consistent en la realisation d'un masque de canal sur le substrat, suivie d' - une etape d'implantation ionique du substrat comportant ce masque de canal, suivie d' - une etape de retrait du masque de canal, une etape de depot d'au moins une couche guidante sur le substrat, I'indice de refraction de cette couche guidante etant superieur a celui du substrat; cette methode comprend de plus, precedent lietape de depot: une etape de definition d'une couche d'adaptation consistent en la realisation diun masque d'adaptation sur le substrat, la couche d'adaptation s'etendant lateralement de part et d'autre du canal, cette etape etant suivie d' - une etape d'implantation ionique du substrat comportant le masque d'adaptation, suivie d'  2 o The invention also relates to a method of manufacturing a waveguide on an optical substrate comprising: - a step of defining a channel consisting in the production of a channel mask on the substrate, followed by - a step of ion implantation of the substrate comprising this channel mask, followed by - a step of removing the channel mask, a step of depositing at least one guiding layer on the substrate, the refraction index of this guide layer being higher than that of the substrate; this method further comprises, above the deposition step: a step of defining an adaptation layer consists of making an adaptation mask on the substrate, the adaptation layer extending laterally on either side of the canal, this step being followed by - a step for ion implantation of the substrate comprising the adaptation mask, followed by

3 5 - une etape de retrait du masque d'adaptation.  3 5 - a step of removing the adaptation mask.

Selon une premiere variante, cette methode de fabrication d'un guide d'onde sur un substrat optique comprend: - une premiere etape d'implantation ionique du substrat, - une etape de depot d'au moins une couche guidante sur le substrat, I'indice de refraction de cette couche guidante etant superieur a celui du substrat; et elle comprend de plus, suite a cette premiere etape: - une etape de definition d'une couche d'adaptation par application d'un masque d'adaptation sur le substrat et gravure de ce substrat, suivie d' - une deuxieme etape d'implantation ionique du substrat comportant ce masque o d'adaptation pour obtenir un canal, suivie d'  According to a first variant, this method of manufacturing a waveguide on an optical substrate comprises: - a first step of ion implantation of the substrate, - a step of depositing at least one guiding layer on the substrate, I the refractive index of this guide layer being greater than that of the substrate; and it further comprises, following this first step: - a step of defining an adaptation layer by application of an adaptation mask on the substrate and etching of this substrate, followed by - a second step of ion implantation of the substrate comprising this mask or adaptation to obtain a channel, followed by

- une etape de retrait du masque d'adaptation.  - a step of removing the adaptation mask.

Selon une deuxieme variante, la methode comprend: - une premiere etape d'implantation ionique du substrat, - une etape de definition d'un canal par application d'un masque d'adaptation sur le substrat et gravure de ce substrat, - une etape de depot d'au moins une couche guidante sur le substrat, I'indice de refraction de cette couche guidante etant superieur a celui du substrat; et elle comprend de plus, suite a l'etape de definition du canal: - une deuxieme etape d'implantation ionique du substrat comportant ce masque o d'adaptation pour obtenir une couche d'adaptation, suivie d'  According to a second variant, the method comprises: - a first step of ion implantation of the substrate, - a step of defining a channel by application of an adaptation mask on the substrate and etching of this substrate, - a step depositing at least one guiding layer on the substrate, the refractive index of this guiding layer being greater than that of the substrate; and it further comprises, following the step of defining the channel: - a second step of ion implantation of the substrate comprising this mask or adaptation to obtain an adaptation layer, followed by

- une etape de retrait du masque d'adaptation.  - a step of removing the adaptation mask.

De preference, la methode comprend une etape de recuit du substrat qui  Preferably, the method comprises a step of annealing the substrate which

fait suite a l'une des etapes d'implantation ionique.  follows one of the stages of ion implantation.

Cette methode est d'autre part adaptee a la realisation des differentes  This method is also suitable for carrying out the different

caracteristiques du guide d'onde mentionnees ci-dessus.  characteristics of the waveguide mentioned above.

La presente invention appara^'tra maintenant avec plus de details dans le  The present invention will now appear in more detail in the

cadre de la description qui suit d'exemples de realisation donnes a titre illustratif  part of the following description of illustrative embodiments

en se referent aux figures annexees qui representent: - la figure 1, un schema d'un guide d'onde, - la figure 2, la fabrication d'un guide d'onde selon une premiere methode, - la figure 3, une premiere variante de cette methode, - la figure 4, une deuxieme variante de cette methode, et  with reference to the appended figures which represent: - Figure 1, a diagram of a waveguide, - Figure 2, the manufacture of a waveguide according to a first method, - Figure 3, a first variant of this method, FIG. 4, a second variant of this method, and

- la figure 5, un guide d'onde fabrique selon une autre methode.  - Figure 5, a waveguide manufactured according to another method.

En reference a la figure 1, le substrat est en silice ou bien il est en silicium sur lequel, soit on a fait cro^'tre un oxyde thermique, soit on a depose une couche de dioxyde de silicium ou d'un autre materiau. II presente ainsi une face superieure ou substrat optique 11, couramment en dioxyde de silicium, d'une epaisseur de 5 a 20 microns, par exemple. Le canal 12 realise par implantation ionique, de titane par exemple, est ici integre dans le substrat optique. La couche d'adaptation prend ici la forme de deux bandes 13, 14 egalement realisees par im plantation ion ique et done elles au ssi integ rees da n s le su bstrat optique. Ces deux bandes stetendent lateralement depuis chacun des flans du canal 12. Wiles presentent toutes deux une epaisseur inferieure a celle du canal, de preference comprise entre 20% et 60% de celle-ci. Ensuite le substrat 11 est recouvert d'une couche guidante 15 en dioxyde de silicium dope qui est realisee par o exemple au moyen d'un depBt chimique en phase vapeur (PECVD pour  With reference to FIG. 1, the substrate is made of silica or else it is made of silicon on which either a thermal oxide has been grown or a layer of silicon dioxide or another material has been deposited. It thus presents an upper face or optical substrate 11, commonly made of silicon dioxide, with a thickness of 5 to 20 microns, for example. The channel 12 produced by ion implantation, of titanium for example, is here integrated into the optical substrate. The adaptation layer here takes the form of two bands 13, 14 also produced by ion implantation and therefore they are integrated into the optical substrate. These two bands stetendent laterally from each of the blanks of channel 12. Wiles both have a thickness less than that of the channel, preferably between 20% and 60% thereof. Then the substrate 11 is covered with a guiding layer 15 of doped silicon dioxide which is produced for example by means of a chemical vapor deposition (PECVD for

<< Plasma Enhanced Chemical Vapor Deposition >> en anglais).  << Plasma Enhanced Chemical Vapor Deposition >>.

L'indice de refraction du canal 12 est naturellement plus eleve que celui du dioxyde de silicium. L'indice de refraction de la couche d'adaptation 13, 14 est quant a lui plus eleve que celui du canal 12. La couche guidante 15 de 5 microns s d'epaisseur, par exemple, presente un indice de refraction superieur a celui du substrat optique 11, de 0,3% par exemple. Wile peut eventuellement resulter d'un empilement de couches minces. De preference, une couche de recouvrement 16 qui peut egalement consister en un empilement de couches minces est prevue sur la couche guidante 15. Cette couche de recouvrement, de 5 microns o d'epaisseur egalement, a un indice inferieur a celui de la couche guidante 15 et a  The refractive index of channel 12 is naturally higher than that of silicon dioxide. The refraction index of the adaptation layer 13, 14 is itself higher than that of the channel 12. The guiding layer 15 of 5 microns s thickness, for example, has a refraction index greater than that of the optical substrate 11, for example 0.3%. Wile can possibly result from a stack of thin layers. Preferably, a covering layer 16 which may also consist of a stack of thin layers is provided on the guiding layer 15. This covering layer, also 5 microns o thick, has an index lower than that of the guiding layer 15 and a

celui du canal 12; dans le cas present elle est en dioxyde de silicium non dope.  that of channel 12; in the present case it is made of non-doped silicon dioxide.

En reference a la figure 2a, une premiere methode de fabrication du guide d'onde comporte une premiere etape qui consiste a realiser un masque 22 sur le substrat optique 21 pour definir le canal 23, ceci au moyen d'un procede s classique de photolithographie. Le masque 22 est en resine, en metal ou en tout autre materiau susceptible de constituer une barriere infranchissable pour les ions lors de ['implantation. Eventuellement, le masque peut etre obtenu par un  With reference to FIG. 2a, a first method of manufacturing the waveguide comprises a first step which consists in producing a mask 22 on the optical substrate 21 to define the channel 23, this by means of a conventional photolithography process. . The mask 22 is made of resin, metal or any other material capable of constituting an insurmountable barrier for the ions during implantation. Optionally, the mask can be obtained by a

procede d'ecriture directe.direct writing process.

Le canal 23 est produit par implantation ionique du substrat masque. A o titre d'exemple, pour une implantation de titane, la dose d'implantation est comprise entre 1016/cm2 et 1048/cm2 et l'energie est comprise entre quelques  Channel 23 is produced by ion implantation of the mask substrate. For example, for a titanium implantation, the implantation dose is between 1016 / cm2 and 1048 / cm2 and the energy is between a few

dizaines et quelques centaines de Key.  tens and a few hundred Key.

En reference a la figure 2b, le masque est retire, par exemple au moyen  Referring to Figure 2b, the mask is removed, for example by means

d'un procede de gravure chimique.of a chemical etching process.

En reference a la figure 2c, les deux bandes 24, 25 de la couche d'adaptation vent obtenues par masquage et implantation, tout comme le canal 23. II convient de noter que ces deux bandes auraient pu etre realisees avant le canal. Le substrat est ensuite soumis a un recuit pour reduire les pertes a la propagation au sein du canal 23. A titre d'exemple, la temperature est comprise entre 400 et 500 C, I'atmosphere est contrBlee ou bien il s'agit de l'air libre,  With reference to FIG. 2c, the two bands 24, 25 of the wind adaptation layer obtained by masking and implantation, just like the channel 23. It should be noted that these two bands could have been produced before the channel. The substrate is then subjected to an annealing in order to reduce the losses to propagation within the channel 23. For example, the temperature is between 400 and 500 C, the atmosphere is controlled or else it is the 'outdoors,

tandis que la duree est de l'ordre de quelques dizaines d'heures.  while the duration is of the order of a few tens of hours.

o En reference a la figure 2d, la couche guidante 26 est alors deposee sur le substrat 21 au moyen de l'une quelconque des techniques connues pourvu que celle-ci conduise a un materiau a faibles pertes dont l'indice de refraction peut etre aisement contrBle. Enfin, la couche de recouvrement 27 est  o With reference to FIG. 2d, the guiding layer 26 is then deposited on the substrate 21 by means of any of the known techniques, provided that this leads to a material with low losses whose refractive index can be easily contrBle. Finally, the covering layer 27 is

eventuellement deposee sur la couche guidante 26.  possibly deposited on the guide layer 26.

En reference a la figure 3a, une premiere variante de cette methode de fabrication comporte une premiere etape qui consiste a implanter la totalite du  With reference to FIG. 3a, a first variant of this manufacturing method comprises a first step which consists in implanting the whole of the

substrat optique 31.optical substrate 31.

En reference a la figure 3b, une deuxieme etape consiste a definir les deux bandes 34, 35 de la couche d'adaptation, ceci par masquage et gravure du  With reference to FIG. 3b, a second step consists in defining the two strips 34, 35 of the adaptation layer, this by masking and etching the

2 o substrat 31.2 o substrate 31.

En reference a la figure 3c, le canal 33 est obtenu par implantation au travers du masque utilise pour la gravure des deux bandes 34, 35 de la couche  With reference to FIG. 3c, the channel 33 is obtained by implantation through the mask used for the etching of the two strips 34, 35 of the layer

d'adaptation. Ensuite, le masque est retire.  adaptation. Then the mask is removed.

Le substrat est eventuellement soumis a un recuit.  The substrate is optionally subjected to annealing.

En reference a la figure 3d, vent enfin successivement deposees la  With reference to figure 3d, finally wind successively deposited the

couche guidante 36 et la couche de recouvrement 37.  guiding layer 36 and the covering layer 37.

En reference a la figure 4a, une deuxieme variante de la premiere methode de fabrication comporte une premiere etape qui consiste a implanter la  With reference to FIG. 4a, a second variant of the first manufacturing method comprises a first step which consists in implanting the

totalite du substrat optique 41, tout comme dans la premiere variante.  all of the optical substrate 41, as in the first variant.

En reference a la figure 4b, une deuxieme etape consiste a definir le  Referring to Figure 4b, a second step is to define the

canal 43, ceci par masquage et gravure du substrat 41.  channel 43, this by masking and etching of the substrate 41.

En reference a la figure 4c, les deux bandes 34, 35 de la couche d'adaptation vent obtenues par implantation au travers du masque utilise pour la gravure du canal 43. Ensuite, le masque est retire, puis le substrat est soumis a  With reference to FIG. 4c, the two bands 34, 35 of the wind adaptation layer obtained by implantation through the mask used for the etching of the channel 43. Then, the mask is removed, then the substrate is subjected to

un recuit.annealing.

En reference a la figure 4d, vent enfin successivement deposees la  With reference to FIG. 4d, finally wind successively deposited the

couche guidante 46 et la couche de recouvrement 47.  guide layer 46 and cover layer 47.

Une deuxieme methode met en cauvre la technologie d'echange d'ions.  A second method harnesses ion exchange technology.

Dans ce cas, le substrat est un verre contenant des ions mobiles a temperature relativement basse, un verre de silicates contenant de l'oxyde de sodium par exemple. Cette methode est tres similaire a la premiere methode si ce n'est que les etapes diimplantation vent remplacees par des etapes diimmersion dans un bain contenant des ions polarisables tel que argent ou potassium. Le motif est ainsi realise par augmentation de l'indice de refraction consecutive a l'echange o des ions polarisables avec les ions mobiles du substrat. Puis, generalement, le canal et la couche d'adaptation vent enterres par application d'un champ  In this case, the substrate is a glass containing mobile ions at relatively low temperature, a glass of silicates containing sodium oxide for example. This method is very similar to the first method except that the implantation steps are replaced by immersion steps in a bath containing polarizable ions such as silver or potassium. The pattern is thus produced by increasing the refractive index following the exchange o of the polarizable ions with the mobile ions of the substrate. Then, generally, the channel and the layer of adaptation wind buried by application of a field

electrique perpendiculaire a la face du substrat.  electric perpendicular to the face of the substrate.

En reference a la figure 5, une troisieme methode met en ceuvre la technologie des couches minces. Generalement, la face superieure du substrat 50 est en dioxyde de silicium. Une premiere couche d'indice superieur a celui du dioxyde de silicium est deposee sur le substrat optique au moyen d'une quelconque technique connue telle que depot par hydrolyse a la flamme (< Flame Hydrolysis Deposition >> en terminologie anglo-saxonne) depot chimique en phase vapeur haute ou basse pression et assiste ou non par plasma,  Referring to Figure 5, a third method implements the thin film technology. Generally, the upper face of the substrate 50 is made of silicon dioxide. A first layer with an index higher than that of silicon dioxide is deposited on the optical substrate by means of any known technique such as deposit by flame hydrolysis (<Flame Hydrolysis Deposition >> in chemical English terminology) in high or low pressure vapor phase and assisted or not by plasma,

o evaporation sous vice, pulverisation cathodique ou depot par centrifugation.  o evaporation under vice, cathodic pulverization or deposit by centrifugation.

Cette couche est souvent du dioxyde de silicium dope, de l'oxy-nitrure de silicium, du nitrure de silicium et l'on peut aussi employer des polymeres ou des sole-gels. Un masque definissant le canal est alors applique sur la couche deposee. Ensuite, ce canal 51 est realise par un procede de gravure chimique ou de gravure seche tel que gravure plasma, gravure ionique reactive ou gravure  This layer is often doped silicon dioxide, silicon oxy-nitride, silicon nitride and it is also possible to use polymers or sole-gels. A mask defining the channel is then applied to the deposited layer. Then, this channel 51 is produced by a chemical etching or dry etching process such as plasma etching, reactive ion etching or etching

par faisceau d'ions.by ion beam.

Le masque est retire apres la gravure et, une deuxieme couche est deposee. Un autre masque definissant les deux bandes 53, 54 de la couche d'adaptation est ensuite applique sur la deuxieme couche avant une nouvelle 3 o etape de gravure. Ensuite, vent deposees la couche guidante 55 puis  The mask is removed after engraving and a second layer is deposited. Another mask defining the two bands 53, 54 of the adaptation layer is then applied to the second layer before a new 3 o etching step. Then, wind deposited the guide layer 55 then

eventuellement la couche de recouvrement 56.  possibly the covering layer 56.

Bien entendu, il est envisageable de realiser d'abord les deux bandes 53,  Of course, it is possible to realize first the two bands 53,

54 de la couche d'adaptation et ensuite le canal 51.  54 of the adaptation layer and then the channel 51.

Cette methode requiert une operation de gravure qu'il est difficile de ma^triser tent sur le plan de la resolution spatiale que sur l'etat de surface des flancs du canal 51 et des bandes 53, 54, caracteristiques qui conditionnent  This method requires an engraving operation which is difficult to control in terms of spatial resolution than in the surface state of the flanks of the channel 51 and of the bands 53, 54, characteristics which condition

directement les pertes a la propagation du guide d'onde.  directly the propagation losses of the waveguide.

Les exemples de realisation de ['invention presentes ci-dessus ont ete choisis pour leur caractere concret. II ne serait cependant pas possible de  The embodiments of the invention presented above have been chosen for their specific nature. However, it would not be possible to

repertorier de maniere exhaustive tous les modes de realisation que recouvre  list in an exhaustive manner all the embodiments that cover

cette invention. En particulier, toute etape ou tout moyen decrit peutetre remplace par une etape ou un moyen equivalent sans sortir du cadre de la  this invention. In particular, any stage or any means described may be replaced by a stage or equivalent means without departing from the scope of the

presente invention.present invention.

Claims (14)

REVENDICATIONS 1) Guide d'onde comportant un canal 12, 23, 31 sur un substrat optique 11, 21, 30, I'indice de refraction de ce canal etant superieur a celui du substrat, comportant aussi au moins une couche guidante 15, 26, 35 agencee sur ledit canal, l'indice de cette couche guidante etant superieur a celui du substrat, caracterise en ce qu'il comporte une couche d'adaptation 13-14, 24-25, 33-34  1) Waveguide comprising a channel 12, 23, 31 on an optical substrate 11, 21, 30, the refractive index of this channel being greater than that of the substrate, also comprising at least one guiding layer 15, 26, 35 arranged on said channel, the index of this guiding layer being greater than that of the substrate, characterized in that it comprises an adaptation layer 13-14, 24-25, 33-34 s'etendant lateralement de part et d'autre audit canal 12, 23, 31.  laterally extending on either side of said channel 12, 23, 31. 2) Guide d'onde selon la revendication 1, caracterise en ce que ltepaisseur de ladite couche d'adaptation 13-14, 24-25, 33-34 est inferieure a l'epaisseur  2) Waveguide according to claim 1, characterized in that the thickness of said adaptation layer 13-14, 24-25, 33-34 is less than the thickness o audit canal 12,23, 31.o audit channel 12,23, 31. 3) Guide d'onde selon la revendication 2, caracterise en ce que l'epaisseur de ladite couche d'adaptation 13-14, 24-25, 33-34 est comprise entre 20% et  3) Waveguide according to claim 2, characterized in that the thickness of said adaptation layer 13-14, 24-25, 33-34 is between 20% and % de l'epaisseur audit canal 12, 23, 31.  % of the thickness at said channel 12, 23, 31. 4) Guide d'onde selon l'une quelconque des revendications precedentes  4) Waveguide according to any one of the preceding claims caracterise en ce que, ladite couche d'adaptation se decomposant en deux bandes 13-14, 24-25, 33-34 jouxtant chacune un bord lateral audit canal 12, 23,  characterized in that, said adaptation layer breaking down into two bands 13-14, 24-25, 33-34 each adjoining a lateral edge to said channel 12, 23, 31, la largeur de chacune de ces bandes est au moins egale a celle du canal.  31, the width of each of these bands is at least equal to that of the channel. ) Guide d'onde selon l'une quelconque des revendications precedentes,  ) Waveguide according to any one of the preceding claims, caracterise en ce que l'indice de refraction de ladite couche d'adaptation 13-14,  characterized in that the refractive index of said adaptation layer 13-14, o 24-25, 33-34 est superieur a celui du canal 12, 23, 31.  o 24-25, 33-34 is greater than that of channel 12, 23, 31. 6) Guide d'onde selon l'une quelconque des revendications precedentes,  6) Waveguide according to any one of the preceding claims, caracterise en ce qu'il comporte au moins une couche de recouvrement 16, 27, 36 disposee sur ladite couche guidante 15, 26, 35, I'indice de cette couche de  characterized in that it comprises at least one covering layer 16, 27, 36 arranged on said guiding layer 15, 26, 35, the index of this layer of recouvrement etant inferieur a celui de la couche guidante et a celui du canal.  overlap being lower than that of the guiding layer and that of the channel. s 7) Guide d'onde selon l'une quelconque des revendications precedentes,  s 7) waveguide according to any one of the preceding claims, caracterise en ce que ledit canal 12, 23 est integre dans ledit substrat 11, 21.  characterized in that said channel 12, 23 is integrated into said substrate 11, 21. 8) Guide d'onde selon l'une quelconque des revendications precedentes,  8) Waveguide according to any one of the preceding claims, caracterise en ce que ladite couche d'adaptation 13-14, 24-25 est integree dans  characterized in that said adaptation layer 13-14, 24-25 is integrated into ledit substrat 11.said substrate 11. o 9) Guide d'onde selon l'une quelconque des revendications 1 a 6,  o 9) waveguide according to any one of claims 1 to 6, caracterise en ce que ledit canal 3 1 fait saillie sur led it su bstrat 30.  characterized in that said channel 3 1 protrudes from led it on base 30. ) Guide d'onde selon l'une quelconque des revendications 1 a 6 ou 9,  ) Waveguide according to any one of claims 1 to 6 or 9, caracterise en ce que ladite couche d'adaptation 33-34 fait saillie sur ledit  characterized in that said adaptation layer 33-34 protrudes from said substrat 30.substrate 30. 11) Guide d'onde selon l'une quelconque des revendications precedentes,  11) Waveguide according to any one of the preceding claims, caracterise en ce que l'indice de refraction de ladite couche guidante 15, 26, 35  characterized in that the refractive index of said guiding layer 15, 26, 35 vaut celui du substrat 11, 21, 30 multiplie par un facteur superieur a 1, 001.  is that of the substrate 11, 21, 30 multiplied by a factor greater than 1, 001. 12) Guide d'onde selon l'une quelconque des revendications precedentes,  12) Waveguide according to any one of the preceding claims, caracterise en ce que l'epaisseur de ['ensemble des couches guidantes 15, 26,  characterized in that the thickness of the set of guide layers 15, 26, est comprise entre 1 et 20 microns.is between 1 and 20 microns. 13) Guide d'onde selon l'une quelconque des revendications precedentes,  13) Waveguide according to any one of the preceding claims, caracterise en ce que ledit canal 12, 23 resulte d'une implantation ionique dans  characterized in that said channel 12, 23 results from an ion implantation in ledit substrat 11, 21.said substrate 11, 21. o 14) Guide d'onde selon l'une quelconque des revendications precedentes,  o 14) waveguide according to any one of the preceding claims, caracterise en ce que ladite couche d'adaptation 33-34 resulte d'une implantation  characterized in that said adaptation layer 33-34 results from implantation ionique dans ledit substrat 11, 21.ionic in said substrate 11, 21. ) Guide d'onde selon l'une quelconque des revendications precedentes,  ) Waveguide according to any one of the preceding claims, caracterise en ce que la face du substrat 11, 21, 30 sur laquelle est realisee I'implantation ionique est en dioxyde de silicium. 16) Methode de fabrication d'un guide d'onde sur un substrat optique comprenant: - une etape de definition d'un canal consistent en la realisation d'un masque de canal 22 sur ledit substrat 21, suivie d' - une etape d'implantation ionique du substrat comportant ledit masque de canal 22, suivie d' - une etape de retrait audit masque de canal 22, - une etape de depot d'au moins une couche guidante 26 sur le substrat, I'indice de refraction de cette couche guidante etant superieur a celui du substrat; caracterisee en ce qu'elle comprend de plus, precedent ladite etape de depot: - une etape de definition d'une couche d'adaptation consistent en la realisation d'un masque d'adaptation sur ledit substrat 21, ladite couche d'adaptation s'etendant lateralement de part et d'autre audit canal 22, etape suivie d' 3 0 - une etape d'implantation ionique du substrat comportant ledit masque d'adaptation, suivie d'  characterized in that the face of the substrate 11, 21, 30 on which the ion implantation is carried out is made of silicon dioxide. 16) Method of manufacturing a waveguide on an optical substrate comprising: - a step of defining a channel consists in the production of a channel mask 22 on said substrate 21, followed by - a step of ion implantation of the substrate comprising said channel mask 22, followed by - a step of removal from said channel mask 22, - a step of depositing at least one guiding layer 26 on the substrate, the refraction index of this guide layer being higher than that of the substrate; characterized in that it further comprises, preceding said deposition step: - a step of defining an adaptation layer consists of the production of an adaptation mask on said substrate 21, said adaptation layer s extending laterally on either side of said channel 22, step followed by 30 - a step of ion implantation of the substrate comprising said adaptation mask, followed by - une etape de retrait audit masque d'adaptation.  - a step of removing said adaptation mask. 17) Methode de fabrication d'un guide d'onde sur un substrat optique comprenant: s - une premiere etape d'implantation ionique du substrat 31, - une etape de depot d'au moins une couche guidante 36 sur le substrat, I'indice de refraction de cette couche guidante etant superieur a celui du substrat; caracterisee en ce qu'elle comprend de plus, suite a ladite premiere etape: - une etape de definition d'une couche d'adaptation 34, 35 par application d'un masque d'adaptation sur le substrat 31 et gravure de ce substrat, suivie d' - une deuxieme etape d'implantation ionique du substrat comportant ledit masque d'adaptation pour obtenir un canal 33, suivie d'  17) Method for manufacturing a waveguide on an optical substrate comprising: s - a first step of ion implantation of the substrate 31, - a step of depositing at least one guiding layer 36 on the substrate, I ' refractive index of this guide layer being greater than that of the substrate; characterized in that it further comprises, following said first step: - a step of defining an adaptation layer 34, 35 by application of an adaptation mask on the substrate 31 and etching of this substrate, followed by - a second step of ion implantation of the substrate comprising said adaptation mask to obtain a channel 33, followed by - une etape de retrait audit masque d'adaptation.  - a step of removing said adaptation mask. o 18) Methode de fabrication d'un guide d'onde sur un substrat optique comprenant: - une premiere etape d'implantation ionique du substrat 41, une etape de definition d'un canal 43 par application d'un masque d'adaptation sur le substrat 41 et gravure de ce substrat, - une etape de depot d'au moins une couche guidante 46 sur le substrat, I'indice de refraction de cette couche guidante etant superieur a celui du substrat; caracterisee en ce qu'elle comprend de plus, suite a ladite etape de definition du canal: o - une deuxieme etape d'implantation ionique du substrat comportant ledit masque d'adaptation pour obtenir une couche d'adaptation 44, 45, suivie d'  o 18) Method of manufacturing a waveguide on an optical substrate comprising: - a first step of ion implantation of the substrate 41, a step of defining a channel 43 by applying an adaptation mask on the substrate 41 and etching of this substrate, - a step of depositing at least one guide layer 46 on the substrate, the refractive index of this guide layer being greater than that of the substrate; characterized in that it further comprises, following said step of defining the channel: o - a second step of ion implantation of the substrate comprising said adaptation mask to obtain an adaptation layer 44, 45, followed by - une etape de retrait audit masque d'adaptation.  - a step of removing said adaptation mask. 19) Methode selon l'une quelconque des revendications 16 a 18,  19) Method according to any one of claims 16 to 18, caracterisee en ce qu'elle comprend une etape de recuit du substrat 21, 31, 41,  characterized in that it comprises a step of annealing the substrate 21, 31, 41, qui fait suite a l'une des etapes d'implantation ionique.  which follows one of the stages of ion implantation. ) Methode selon l'une quelconque des revendications 16 ou 19,  ) Method according to any one of claims 16 or 19, caracterisee en ce qu'elle comprend une etape de depot d'une couche de recouvrement 27, 37, 47, 56 sur ladite couche guidante 26, 36, 46, 55, I'indice de cette couche de recouvrement etant inferieur a celui de la couche guidante et a  characterized in that it comprises a step of depositing a covering layer 27, 37, 47, 56 on said guiding layer 26, 36, 46, 55, the index of this covering layer being lower than that of the guiding layer and has celui du canal 23, 31, 41, 50.that of channel 23, 31, 41, 50. 21) Methode selon l'une quelconque des revendications 16 a 20,  21) Method according to any one of claims 16 to 20, caracterisee en ce que l'indice de ladite couche guidante 26, 36, 46, 55 vaut  characterized in that the index of said guiding layer 26, 36, 46, 55 is celui du substrat 21, 31, 41, 50 multiplie par un facteur superieur a 1, 001.  that of the substrate 21, 31, 41, 50 multiplies by a factor greater than 1, 001. 22) Methode selon l'une quelconque des revendications 16 a 21,  22) Method according to any one of claims 16 to 21, caracterisee en ce que l'epaisseur de ['ensemble des couches guidantes 26, 36,  characterized in that the thickness of the set of guide layers 26, 36, 46, 55 est comprise entre 1 et 20 microns.  46, 55 is between 1 and 20 microns. 23) Methode selon rune quelconque des revendications 16 a 22,  23) Method according to any one of claims 16 to 22, caracterisee en ce que la face 21, 31, 41, 50 du substrat sur laquelle est realisee  characterized in that the face 21, 31, 41, 50 of the substrate on which is produced
FR0206975A 2002-06-06 2002-06-06 WAVEGUIDE COMPRISING A CHANNEL AND AN ADAPTATION LAYER Expired - Fee Related FR2840689B1 (en)

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AU2003255641A AU2003255641A1 (en) 2002-06-06 2003-06-06 Waveguide comprising a channel and an adaptation layer
PCT/FR2003/001682 WO2003104865A2 (en) 2002-06-06 2003-06-06 Waveguide comprising a channel and an adaptation layer

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AU2003255641A8 (en) 2003-12-22

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