FR2832253A1 - Solar cell comprises electrodes separated by a thin non-degradable plastic sheet having a thin layer of a mixture of silicon and selenium or molybdenum on the surface of the sheet - Google Patents
Solar cell comprises electrodes separated by a thin non-degradable plastic sheet having a thin layer of a mixture of silicon and selenium or molybdenum on the surface of the sheet Download PDFInfo
- Publication number
- FR2832253A1 FR2832253A1 FR0114567A FR0114567A FR2832253A1 FR 2832253 A1 FR2832253 A1 FR 2832253A1 FR 0114567 A FR0114567 A FR 0114567A FR 0114567 A FR0114567 A FR 0114567A FR 2832253 A1 FR2832253 A1 FR 2832253A1
- Authority
- FR
- France
- Prior art keywords
- solar cell
- silicon
- selenium
- thin
- mixture
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 21
- 239000011669 selenium Substances 0.000 title claims abstract description 21
- 229910052711 selenium Inorganic materials 0.000 title claims abstract description 20
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 20
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 title claims abstract description 19
- 239000010703 silicon Substances 0.000 title claims abstract description 19
- 239000000203 mixture Substances 0.000 title claims abstract description 16
- 229910052750 molybdenum Inorganic materials 0.000 title claims abstract description 7
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 title claims abstract description 6
- 239000011733 molybdenum Substances 0.000 title claims abstract description 6
- 239000002985 plastic film Substances 0.000 title abstract description 5
- 229920006238 degradable plastic Polymers 0.000 title abstract 3
- 239000000463 material Substances 0.000 claims abstract description 18
- 239000004033 plastic Substances 0.000 claims abstract description 15
- 238000004519 manufacturing process Methods 0.000 claims abstract description 13
- 229910052741 iridium Inorganic materials 0.000 claims abstract description 8
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000000843 powder Substances 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims abstract description 4
- 239000008188 pellet Substances 0.000 claims description 8
- JVPUTYICKDDWCU-UHFFFAOYSA-N 1,1,2,2-tetrafluoroethane-1,2-diol Chemical compound OC(F)(F)C(O)(F)F JVPUTYICKDDWCU-UHFFFAOYSA-N 0.000 claims description 5
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 claims description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 5
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052794 bromium Inorganic materials 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 239000011863 silicon-based powder Substances 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims 2
- 239000011812 mixed powder Substances 0.000 abstract 1
- 238000005507 spraying Methods 0.000 abstract 1
- 229920006362 Teflon® Polymers 0.000 description 2
- 229910001369 Brass Inorganic materials 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- OHKMFOAYJDGMHW-UHFFFAOYSA-N [Si].[Se] Chemical compound [Si].[Se] OHKMFOAYJDGMHW-UHFFFAOYSA-N 0.000 description 1
- 239000010951 brass Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000007688 edging Methods 0.000 description 1
- GALOTNBSUVEISR-UHFFFAOYSA-N molybdenum;silicon Chemical compound [Mo]#[Si] GALOTNBSUVEISR-UHFFFAOYSA-N 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical compound FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0272—Selenium or tellurium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Hybrid Cells (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
<Desc/Clms Page number 1> <Desc / Clms Page number 1>
La présente invention est relative à une cellule solaire et à son procédé de fabrication. The present invention relates to a solar cell and to its manufacturing process.
Les cellules solaires sont classiquement en silicium pur, mais elles ont de ce fait le défaut d'être très fragiles, le silicium pur étant friable et cassant. Par ailleurs, les techniques de fabrication connues impliquent des matériaux monocristallins, et se sont de ce fait mal applicables à la réalisation de petites cellules solaires (par exemple de surface inférieure à 350 mm2). Solar cells are conventionally made of pure silicon, but they therefore have the defect of being very fragile, pure silicon being brittle and brittle. Furthermore, known manufacturing techniques involve monocrystalline materials, and are therefore poorly applicable to the production of small solar cells (for example with an area of less than 350 mm 2).
Un but de la présente invention est de réaliser une cellule solaire robuste, non fragile, ayant un bon rendement énergétique. An object of the present invention is to provide a robust, non-fragile solar cell with good energy efficiency.
Un autre but de l'invention est un procédé de fabrication d'une cellule solaire, qui permette la réalisation de cellules de toutes dimensions, en particulier de cellules de faibles surfaces (inférieures à 350 mm2). Another object of the invention is a method of manufacturing a solar cell, which allows the production of cells of all sizes, in particular cells of small area (less than 350 mm2).
L'invention propose à cet effet une cellule solaire comprenant une anode et une cathode, l'anode et la cathode étant séparées par une feuille mince en matériau plastique imputrescible munie sur une première face d'une couche mince faite d'un mélange de sélénium ou de molybdène, et de silicium, dans des proportions pondérales sensiblement égales, et par le fait que cette couche mince porte une pastille centrale en iridium appauvri d'où rayonnent une pluralité de liserés conducteurs angulairement répartis et s'étendant jusqu'à un pourtour conducteur. The invention proposes for this purpose a solar cell comprising an anode and a cathode, the anode and the cathode being separated by a thin sheet of rot-proof plastic material provided on a first face with a thin layer made of a mixture of selenium or molybdenum, and silicon, in substantially equal weight proportions, and by the fact that this thin layer carries a central pellet of depleted iridium from which radiate a plurality of angularly distributed conductive edgings and extending up to a periphery driver.
Selon des dispositions préférées de l'invention, éventuellement combinées : - le matériau plastique est du tétra-fluoro-éthylène-glycol (ce qui correspond à la formule du TEFLON ). According to preferred arrangements of the invention, possibly combined: - the plastic material is tetra-fluoro-ethylene-glycol (which corresponds to the TEFLON formula).
- la pluralité de liserés angulairement répartis et le pourtour sont en étain. - the plurality of angularly distributed borders and the periphery are made of tin.
- cette couche mince est connectée à l'anode. - this thin layer is connected to the anode.
<Desc/Clms Page number 2> <Desc / Clms Page number 2>
- l'épaisseur de cette couche mince en sélénium et en silicium est comprise entre 50 et 250 microns. - The thickness of this thin selenium and silicon layer is between 50 and 250 microns.
- la seconde face de la feuille mince en matériau plastique est munie d'une couche mince faite d'un mélange de sélénium et de silicium en proportions pondérales sensiblement égales. - The second face of the thin sheet of plastic material is provided with a thin layer made of a mixture of selenium and silicon in substantially equal weight proportions.
- en variante, la seconde face de la feuille mince en matériau plastique est munie d'une couche de brome. - As a variant, the second face of the thin sheet of plastic material is provided with a layer of bromine.
- l'anode et la cathode sont en cuivre anodisé. - the anode and the cathode are made of anodized copper.
L'invention a également pour objet un procédé de fabrication d'une cellule solaire, comportant les étapes suivantes : - on projette sous pression sur une première face d'une mince feuille de matériau plastique imputrescible, une poudre d'un mélange de silicium et de sélénium ou molybdène en proportions pondérales sensiblement égales, en sorte d'incruster cette poudre dans le matériau plastique ; - on applique sur chacune des faces de cette feuille mince une bande métallique destinée à constituer une électrode ; et - on applique au centre de la face munie de la poudre de sélénium et de silicium une pastille d'iridium appauvri (4), et des liserés (5) conducteurs qui rayonnent depuis cette pastille jusqu'au pourtour conducteur (6) de cette cellule. The subject of the invention is also a method of manufacturing a solar cell, comprising the following steps: - a powder of a mixture of silicon is sprayed onto a first face with a thin sheet of rot-proof plastic material and selenium or molybdenum in substantially equal weight proportions, so as to encrust this powder in the plastic material; - A metal strip intended to constitute an electrode is applied to each of the faces of this thin sheet; and - a depleted iridium pellet (4) is applied to the center of the face provided with the selenium and silicon powder, and conductive lines (5) which radiate from this pellet to the conductive periphery (6) of this cell.
De manière avantageuse : on choisit la feuille mince en tétra-fluoro-éthylène-glycol et on réalise la couche supérieure en un mélange de sélénium et de silicium ; - les liserés qui rayonnent depuis cette pastille et le pourtour de cette cellule sont réalisés en étain. Advantageously: the thin sheet of tetra-fluoro-ethylene-glycol is chosen and the upper layer is produced in a mixture of selenium and silicon; - the borders that radiate from this patch and the periphery of this cell are made of tin.
L'invention va être précisée par la description donnée ci-après d'un exemple de réalisation de l'invention en référence au dessin annexé sur lequel : - la figure 1 est une vue schématique en plan d'une cellule solaire selon un mode de réalisation de l'invention, et - la figure 2 en est une vue éclatée. The invention will be clarified by the description given below of an exemplary embodiment of the invention with reference to the attached drawing in which: - Figure 1 is a schematic plan view of a solar cell according to a mode of embodiment of the invention, and - Figure 2 is an exploded view.
La cellule solaire représentée sur les figures comporte principalement trois éléments : The solar cell shown in the figures mainly comprises three elements:
<Desc/Clms Page number 3><Desc / Clms Page number 3>
- une feuille mince en matière plastique 1, - une couche supérieure 2 connectée à une première électrode, ici une anode A et - une couche inférieure 3 connectée à une seconde électrode, ici une cathode B. - a thin plastic sheet 1, - an upper layer 2 connected to a first electrode, here an anode A and - a lower layer 3 connected to a second electrode, here a cathode B.
La feuille mince 1 est en principe réalisée en un matériau capable de résister au temps : il est en effet de préférence imputrescible, avantageusement en TEFLON @, c'est à dire en tétra-fluoro-éthylène-glycol. The thin sheet 1 is in principle made of a material capable of withstanding time: it is in fact preferably rot-proof, advantageously TEFLON @, that is to say tetra-fluoro-ethylene-glycol.
La couche supérieure 2 est de préférence faite d'un mélange en proportions pondérales sensiblement égales de sélénium et de silicium, c'est-àdire comprises dans la plage de 40%-60% à 60%-40%. The upper layer 2 is preferably made of a mixture in substantially equal weight proportions of selenium and silicon, that is to say comprised in the range of 40% -60% to 60% -40%.
Sur cette couche supérieure 2 est disposée une pastille circulaire 4 située au centre de la cellule, d'où rayonnent des liserés, ou capillaires, 5 angulairement répartis autour cette pastille sur 3600, jusqu'au bord 6 de la cellule. Cette pastille a de préférence un diamètre de l'ordre de 10% à 20% de la plus petite dimension de la cellule (sa dimension verticale dans la figure 1). On this upper layer 2 is disposed a circular patch 4 located in the center of the cell, from which radiate, or capillary, 5 angularly distributed around this patch on 3600, to the edge 6 of the cell. This pellet preferably has a diameter of the order of 10% to 20% of the smallest dimension of the cell (its vertical dimension in FIG. 1).
Ces capillaires ont de préférence un écartement angulaire compris entre 5 et 150 de préférence entre 7 et 100. These capillaries preferably have an angular spacing of between 5 and 150, preferably between 7 and 100.
La pastille 4 est ici en iridium appauvri, c'est à dire qu'elle n'émet pas de rayons y, et les capillaires 5 ainsi que le bord 6 sont conducteurs, par exemple en étain (voire en laiton, à titre d'exemple de variante). The patch 4 is here in depleted iridium, that is to say that it does not emit y-rays, and the capillaries 5 as well as the edge 6 are conductive, for example made of tin (or even brass, by way of variant example).
L'épaisseur de la couche Se-Si peut être choisie entre 50 et 250 ! lm, par exemple 200 microns. The thickness of the Se-Si layer can be chosen between 50 and 250! lm, for example 200 microns.
La couche inférieure est ici aussi une couche faite d'un mélange de sélénium et de silicium en proportions sensiblement égales (par exemple 50%- 50%) dans la plage précitée de 40/60 à 60/40. The lower layer is also here a layer made of a mixture of selenium and silicon in substantially equal proportions (for example 50% - 50%) in the aforementioned range of 40/60 to 60/40.
En variante, cette couche inférieure est en un dopant tel que le brome ; son épaisseur est de préférence sensiblement plus faible que celle de la feuille mince en matière plastique (par exemple de l'ordre d'un à dix microns). As a variant, this lower layer is made of a dopant such as bromine; its thickness is preferably substantially smaller than that of the thin plastic sheet (for example of the order of one to ten microns).
L'épaisseur globale peut atteindre de l'ordre d'un millimètre. The overall thickness can reach around one millimeter.
<Desc/Clms Page number 4> <Desc / Clms Page number 4>
Des électrodes A et B, de préférence sous forme de bandes métalliques en cuivre anodisé électriquement connectées aux couches supérieure et inférieure, complètent la cellule. Electrodes A and B, preferably in the form of metallic strips of anodized copper electrically connected to the upper and lower layers, complete the cell.
Le procédé de fabrication de cette cellule est le suivant : on part d'une feuille de matière plastique (référence 1 de la figure 2). On projette sous pression sur une face (ici la face supérieure) une poudre de sélénium et silicium en proportions sensiblement égales, qui vient s'incruster dans le plastic. De la sorte ce n'est qu'en raison de ce que la figure 2 est une vue éclatée de la cellule que la couche supérieure 2 y est représentée à l'écart de la feuille mince de matière plastique 1. The manufacturing process for this cell is as follows: we start with a plastic sheet (reference 1 in FIG. 2). A powder of selenium and silicon in substantially equal proportions is projected under pressure onto one face (here the upper face), which becomes encrusted in the plastic. In this way it is only due to the fact that FIG. 2 is an exploded view of the cell that the upper layer 2 is shown there apart from the thin sheet of plastic material 1.
On projette de même sous pression un mélange de sélénium et de silicium en proportions sensiblement égales (en pratique le même mélange que pour réaliser la couche supérieure). A mixture of selenium and silicon is likewise sprayed under pressure in substantially equal proportions (in practice the same mixture as for producing the upper layer).
En variante, on dépose sur l'autre face une couche de quelques microns de Brome. On laisse sécher. As a variant, a layer of a few microns of Brome is deposited on the other face. Let it dry.
Ensuite, par toute techniques connues appropriées, on dépose la pastille d'iridium appauvri 4 au centre de la cellule et on trace les capillaires 5 et le bord 6 en étain autour de la pastille d'iridium appauvri. Then, using any suitable known technique, the depleted iridium pellet 4 is deposited in the center of the cell and the capillaries 5 and the tin edge 6 are traced around the depleted iridium pellet.
La cellule solaire qui vient d'être décrite est d'un bon rendement énergétique. Elle est facile à fabriquer en toutes dimensions ; elle n'est pas fragile. Son procédé de fabrication permet d'obtenir les caractéristiques répétitives. La cellule solaire s'applique, notamment, à la fabrication de générateurs solaires, des moteurs ou des pompes à eau. The solar cell which has just been described is of good energy efficiency. It is easy to manufacture in all dimensions; it is not fragile. Its manufacturing process makes it possible to obtain repetitive characteristics. The solar cell applies, in particular, to the manufacture of solar generators, motors or water pumps.
A titre d'exemple, un ensemble de 8 cellules du type précité (avec une couche inférieure en brome) a été réalisée pour une surface totale de'342 cm2. Les chiffres suivants ont été constatés : - Voc : 13.531 - Pmax : 1,635
- FF : 0, 632 - 0s : 1353 W. m2 soit un taux de 3, 53 % (des tensions de plus de 14 Volts ont été obtenues). By way of example, a set of 8 cells of the aforementioned type (with a lower bromine layer) has been produced for a total surface area of 342 cm 2. The following figures have been noted: - Voc: 13,531 - Pmax: 1,635
- FF: 0.632 - 0s: 1353 W. m2 or a rate of 3.53% (voltages of more than 14 Volts have been obtained).
<Desc/Clms Page number 5> <Desc / Clms Page number 5>
Toutefois les formes et dimensions de différents éléments pourront varier dans la limite des équivalents, comme d'ailleurs les matériaux utilisés pour la fabrication, sans changer pour cela la description générale de l'invention qui vient d'être décrite. C'est ainsi par exemple que le mélange siliciumsélénium peut-être remplacé par un mélange silicium-molybdène avec de bons résultats. However, the shapes and dimensions of different elements may vary within the limit of equivalents, like the materials used for manufacturing, without changing the general description of the invention which has just been described. For example, the silicon-selenium mixture can be replaced by a silicon-molybdenum mixture with good results.
Claims (10)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR0114567A FR2832253B1 (en) | 2001-11-12 | 2001-11-12 | SOLAR CELL BASED ON (SE) (SI) IRIDIUM APPAUVRI |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR0114567A FR2832253B1 (en) | 2001-11-12 | 2001-11-12 | SOLAR CELL BASED ON (SE) (SI) IRIDIUM APPAUVRI |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2832253A1 true FR2832253A1 (en) | 2003-05-16 |
| FR2832253B1 FR2832253B1 (en) | 2005-05-27 |
Family
ID=8869276
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR0114567A Expired - Fee Related FR2832253B1 (en) | 2001-11-12 | 2001-11-12 | SOLAR CELL BASED ON (SE) (SI) IRIDIUM APPAUVRI |
Country Status (1)
| Country | Link |
|---|---|
| FR (1) | FR2832253B1 (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4407858A (en) * | 1981-01-13 | 1983-10-04 | Siemens Aktiengesellschaft | Method for producing films of sintered polycrystalline silicon |
| DE19859288A1 (en) * | 1998-12-22 | 2000-06-29 | Bayer Ag | Agglomeration of silicon powders |
-
2001
- 2001-11-12 FR FR0114567A patent/FR2832253B1/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4407858A (en) * | 1981-01-13 | 1983-10-04 | Siemens Aktiengesellschaft | Method for producing films of sintered polycrystalline silicon |
| DE19859288A1 (en) * | 1998-12-22 | 2000-06-29 | Bayer Ag | Agglomeration of silicon powders |
Non-Patent Citations (1)
| Title |
|---|
| SANTANA C J ET AL: "THE EFFECTS OF PROCESSING CONDITIONS ON THE DENSITY AND MICROSTRUCTURE OF HOT-PRESSED SILICON POWDER", JOURNAL OF MATERIALS SCIENCE, CHAPMAN AND HALL LTD. LONDON, GB, vol. 31, 1996, pages 4985 - 4990, XP000892023, ISSN: 0022-2461 * |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2832253B1 (en) | 2005-05-27 |
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Effective date: 20080930 |