FR2829867B1 - MAGNETIC MEMORY HAVING SELECTION BY WRITING BY INHIBITION AND METHOD FOR WRITING SAME - Google Patents

MAGNETIC MEMORY HAVING SELECTION BY WRITING BY INHIBITION AND METHOD FOR WRITING SAME

Info

Publication number
FR2829867B1
FR2829867B1 FR0112123A FR0112123A FR2829867B1 FR 2829867 B1 FR2829867 B1 FR 2829867B1 FR 0112123 A FR0112123 A FR 0112123A FR 0112123 A FR0112123 A FR 0112123A FR 2829867 B1 FR2829867 B1 FR 2829867B1
Authority
FR
France
Prior art keywords
layer
magnetic
writing
selection
same
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0112123A
Other languages
French (fr)
Other versions
FR2829867A1 (en
Inventor
Jean Pierre Nozieres
Laurent Ranno
Yann Conraux
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centre National de la Recherche Scientifique CNRS
Original Assignee
Centre National de la Recherche Scientifique CNRS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR0112123A priority Critical patent/FR2829867B1/en
Application filed by Centre National de la Recherche Scientifique CNRS filed Critical Centre National de la Recherche Scientifique CNRS
Priority to CNB028183614A priority patent/CN100431043C/en
Priority to KR1020047004101A priority patent/KR100908512B1/en
Priority to PCT/FR2002/003209 priority patent/WO2003025946A1/en
Priority to DE60223583T priority patent/DE60223583T2/en
Priority to JP2003529477A priority patent/JP2005503670A/en
Priority to EP02785509A priority patent/EP1438722B1/en
Priority to US10/490,490 priority patent/US7129555B2/en
Priority to AT02785509T priority patent/ATE378682T1/en
Publication of FR2829867A1 publication Critical patent/FR2829867A1/en
Application granted granted Critical
Publication of FR2829867B1 publication Critical patent/FR2829867B1/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/3204—Exchange coupling of amorphous multilayers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Magnetic active materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Nanotechnology (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Thin Magnetic Films (AREA)
  • Semiconductor Memories (AREA)
  • Digital Computer Display Output (AREA)
  • Signal Processing For Digital Recording And Reproducing (AREA)
  • Digital Magnetic Recording (AREA)

Abstract

The invention relates to a magnetic memory with write inhibit selection and the writing method for same. Each memory element of the invention comprises a magnetic tunnel junction ( 70 ) consisting of: a magnetic layer, known as the trapped layer ( 71 ), having hard magnetisation; a magnetic layer, known as the free layer ( 73 ), the magnetisation of which may be reversed; and an insulating layer ( 72 ) which is disposed between the free layer ( 73 ) and the trapped layer ( 71 ) and which is in contact with both of said layers. The free layer ( 73 ) is made from an amorphous or nanocrystalline alloy based on rare earth and a transition metal, the magnetic order of said alloy being of the ferrimagnetic type. The selected operating temperature of the inventive memory is close to the compensation temperature of the alloy.
FR0112123A 2001-09-20 2001-09-20 MAGNETIC MEMORY HAVING SELECTION BY WRITING BY INHIBITION AND METHOD FOR WRITING SAME Expired - Fee Related FR2829867B1 (en)

Priority Applications (9)

Application Number Priority Date Filing Date Title
FR0112123A FR2829867B1 (en) 2001-09-20 2001-09-20 MAGNETIC MEMORY HAVING SELECTION BY WRITING BY INHIBITION AND METHOD FOR WRITING SAME
KR1020047004101A KR100908512B1 (en) 2001-09-20 2002-09-19 Magnetic memory with write prohibition selection and a method of writing the magnetic memory
PCT/FR2002/003209 WO2003025946A1 (en) 2001-09-20 2002-09-19 Magnetic memory with write inhibit selection and the writing method for same
DE60223583T DE60223583T2 (en) 2001-09-20 2002-09-19 MAGNETIC MEMORY WITH WRITING DISPLAY SELECTION AND WRITING PROCESS THEREFOR
CNB028183614A CN100431043C (en) 2001-09-20 2002-09-19 Magnetic memory with write inhibit selection and the writing method for same
JP2003529477A JP2005503670A (en) 2001-09-20 2002-09-19 Magnetic memory capable of selecting write prohibition and writing method thereof
EP02785509A EP1438722B1 (en) 2001-09-20 2002-09-19 Magnetic memory with write inhibit selection and the writing method for same
US10/490,490 US7129555B2 (en) 2001-09-20 2002-09-19 Magnetic memory with write inhibit selection and the writing method for same
AT02785509T ATE378682T1 (en) 2001-09-20 2002-09-19 MAGNETIC MEMORY WITH WRITE INHIBIT SELECTION AND WRITE PROCESS THEREOF

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0112123A FR2829867B1 (en) 2001-09-20 2001-09-20 MAGNETIC MEMORY HAVING SELECTION BY WRITING BY INHIBITION AND METHOD FOR WRITING SAME

Publications (2)

Publication Number Publication Date
FR2829867A1 FR2829867A1 (en) 2003-03-21
FR2829867B1 true FR2829867B1 (en) 2003-12-19

Family

ID=8867444

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0112123A Expired - Fee Related FR2829867B1 (en) 2001-09-20 2001-09-20 MAGNETIC MEMORY HAVING SELECTION BY WRITING BY INHIBITION AND METHOD FOR WRITING SAME

Country Status (9)

Country Link
US (1) US7129555B2 (en)
EP (1) EP1438722B1 (en)
JP (1) JP2005503670A (en)
KR (1) KR100908512B1 (en)
CN (1) CN100431043C (en)
AT (1) ATE378682T1 (en)
DE (1) DE60223583T2 (en)
FR (1) FR2829867B1 (en)
WO (1) WO2003025946A1 (en)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2832542B1 (en) * 2001-11-16 2005-05-06 Commissariat Energie Atomique MAGNETIC DEVICE WITH MAGNETIC TUNNEL JUNCTION, MEMORY AND METHODS OF WRITING AND READING USING THE DEVICE
FR2860910B1 (en) 2003-10-10 2006-02-10 Commissariat Energie Atomique MAGNETIC TUNNEL JUNCTION DEVICE AND METHOD OF WRITING / READING SUCH A DEVICE
US7110287B2 (en) * 2004-02-13 2006-09-19 Grandis, Inc. Method and system for providing heat assisted switching of a magnetic element utilizing spin transfer
FR2866750B1 (en) 2004-02-23 2006-04-21 Centre Nat Rech Scient MAGNETIC MEMORY MEMORY WITH MAGNETIC TUNNEL JUNCTION AND METHOD FOR ITS WRITING
FR2870978B1 (en) * 2004-05-28 2007-02-02 Commissariat Energie Atomique POROUS THERMAL BARRIER RECORDING DEVICE
TWI449040B (en) 2006-10-06 2014-08-11 Crocus Technology Sa System and method for providing content-addressable magnetoresistive random access memory cells
KR100833080B1 (en) * 2006-12-27 2008-05-27 동부일렉트로닉스 주식회사 Magnetic ram and method for fabricating the same
EP2232495B1 (en) * 2007-12-13 2013-01-23 Crocus Technology Magnetic memory with a thermally assisted writing procedure
EP2242097B1 (en) * 2008-02-08 2017-07-26 III Holdings 3, LLC Magnetic memory element, method for driving same, and nonvolatile storage
EP2109111B1 (en) 2008-04-07 2011-12-21 Crocus Technology S.A. System and method for writing data to magnetoresistive random access memory cells
TWI412035B (en) * 2008-04-17 2013-10-11 Sony Corp Recording method of magnetic memory element
EP2124228B1 (en) 2008-05-20 2014-03-05 Crocus Technology Magnetic random access memory with an elliptical junction
US8031519B2 (en) 2008-06-18 2011-10-04 Crocus Technology S.A. Shared line magnetic random access memory cells
JP5316967B2 (en) 2008-12-02 2013-10-16 富士電機株式会社 Magnetic memory element and nonvolatile memory device
US8750028B2 (en) 2009-07-03 2014-06-10 Fuji Electric Co., Ltd. Magnetic memory element and driving method for same
EP2276034B1 (en) 2009-07-13 2016-04-27 Crocus Technology S.A. Self-referenced magnetic random access memory cell
US8472240B2 (en) 2011-05-16 2013-06-25 Micron Technology, Inc. Spin torque transfer memory cell structures and methods
EP2575136B1 (en) * 2011-09-30 2014-12-24 Crocus Technology S.A. Self-reference magnetic random access memory (MRAM) cell comprising ferromagnetic layers
CN104011811B (en) * 2012-01-04 2016-11-02 丰田自动车株式会社 Terres rares nano-composite magnet
KR101474665B1 (en) 2013-09-04 2014-12-19 한양대학교 산학협력단 Spin Transfer Torque Magnetic Tunnel Junction device, Operation Method thereof, and Magnetoresistive Random Access Memory including them
EP3127125B1 (en) 2014-04-02 2022-03-30 Granville, Simon Edward Magnetic materials and devices comprising rare earth nitrides
EP3127146A4 (en) 2014-04-02 2017-11-08 Natali, Franck Doped rare earth nitride materials and devices comprising same
KR102204667B1 (en) 2014-05-07 2021-01-18 한양대학교 산학협력단 Magnetoresistive random access memory for performing write operation with low power and method of controlling the write operation
KR101630042B1 (en) 2014-06-16 2016-06-13 한양대학교 산학협력단 Magnetoresistive random access memory using negative resistance
US9792971B2 (en) * 2014-07-02 2017-10-17 Samsung Electronics Co., Ltd. Method and system for providing magnetic junctions with rare earth-transition metal layers
FR3031622B1 (en) * 2015-01-14 2018-02-16 Centre National De La Recherche Scientifique MAGNETIC MEMORY POINT
CN106297870A (en) * 2015-06-05 2017-01-04 华北电力大学 Magnetic memory roll-over unit with bevel cuts annular free layer

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0695404B2 (en) * 1985-12-27 1994-11-24 ソニー株式会社 Magneto-optical recording method
JPH0423293A (en) * 1990-05-18 1992-01-27 Toshiba Corp Magnetic memory cell and magnetic thin film
JP2933056B2 (en) * 1997-04-30 1999-08-09 日本電気株式会社 Magnetoresistive element, magnetoresistive sensor using the same, magnetoresistive detection system and magnetic storage system
EP1196925B1 (en) * 1999-06-18 2015-10-28 NVE Corporation Magnetic memory coincident thermal pulse data storage
US6134139A (en) * 1999-07-28 2000-10-17 Hewlett-Packard Magnetic memory structure with improved half-select margin
JP3910372B2 (en) * 2000-03-03 2007-04-25 インターナショナル・ビジネス・マシーンズ・コーポレーション Storage system and writing method
US6385082B1 (en) * 2000-11-08 2002-05-07 International Business Machines Corp. Thermally-assisted magnetic random access memory (MRAM)
US6603678B2 (en) 2001-01-11 2003-08-05 Hewlett-Packard Development Company, L.P. Thermally-assisted switching of magnetic memory elements
US7001680B2 (en) * 2003-07-29 2006-02-21 Hitachi Global Storage Tech Nl Low resistance magnetic tunnel junction structure

Also Published As

Publication number Publication date
EP1438722A1 (en) 2004-07-21
WO2003025946A1 (en) 2003-03-27
ATE378682T1 (en) 2007-11-15
JP2005503670A (en) 2005-02-03
KR100908512B1 (en) 2009-07-20
US20050047206A1 (en) 2005-03-03
DE60223583T2 (en) 2008-09-18
DE60223583D1 (en) 2007-12-27
CN100431043C (en) 2008-11-05
FR2829867A1 (en) 2003-03-21
US7129555B2 (en) 2006-10-31
CN1556997A (en) 2004-12-22
EP1438722B1 (en) 2007-11-14
KR20040035850A (en) 2004-04-29

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