FR2816528B3 - PROCESS FOR SELECTIVE ETCHING OF COPPER AND SIDE CLEANING AND CIRCUMFERENCE OF A SUBSTRATE - Google Patents
PROCESS FOR SELECTIVE ETCHING OF COPPER AND SIDE CLEANING AND CIRCUMFERENCE OF A SUBSTRATEInfo
- Publication number
- FR2816528B3 FR2816528B3 FR0014628A FR0014628A FR2816528B3 FR 2816528 B3 FR2816528 B3 FR 2816528B3 FR 0014628 A FR0014628 A FR 0014628A FR 0014628 A FR0014628 A FR 0014628A FR 2816528 B3 FR2816528 B3 FR 2816528B3
- Authority
- FR
- France
- Prior art keywords
- circumference
- copper
- substrate
- selective etching
- side cleaning
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
- B08B7/0042—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like by laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
- H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0014628A FR2816528B3 (en) | 2000-11-14 | 2000-11-14 | PROCESS FOR SELECTIVE ETCHING OF COPPER AND SIDE CLEANING AND CIRCUMFERENCE OF A SUBSTRATE |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0014628A FR2816528B3 (en) | 2000-11-14 | 2000-11-14 | PROCESS FOR SELECTIVE ETCHING OF COPPER AND SIDE CLEANING AND CIRCUMFERENCE OF A SUBSTRATE |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2816528A1 FR2816528A1 (en) | 2002-05-17 |
FR2816528B3 true FR2816528B3 (en) | 2003-04-04 |
Family
ID=8856422
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR0014628A Expired - Fee Related FR2816528B3 (en) | 2000-11-14 | 2000-11-14 | PROCESS FOR SELECTIVE ETCHING OF COPPER AND SIDE CLEANING AND CIRCUMFERENCE OF A SUBSTRATE |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR2816528B3 (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20050084939A (en) * | 2002-11-05 | 2005-08-29 | 메르크 파텐트 게엠베하 | Semiconductor surface treatment and mixture used therein |
US20070084793A1 (en) * | 2005-10-18 | 2007-04-19 | Nigel Wenden | Method and apparatus for producing ultra-high purity water |
WO2008098593A1 (en) * | 2007-02-15 | 2008-08-21 | Basf Se | Titanium etchant composition |
-
2000
- 2000-11-14 FR FR0014628A patent/FR2816528B3/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
FR2816528A1 (en) | 2002-05-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
FR2817042B1 (en) | METHOD AND DEVICE FOR ANALYZING THE SURFACE OF A SUBSTRATE | |
GB2344566B (en) | Method of manufacturing a substrate for electronic device by using etchant and electronic device having the substrate | |
FR2812449B1 (en) | PLASMA DISPLAY AND METHOD FOR MANUFACTURING PLASMA DISPLAY | |
IL145341A0 (en) | Single wafer type substrate cleaning method and apparatus | |
GB2370251B (en) | Etchant and array substrate having copper lines etched by the etchant | |
FR2809867B1 (en) | FRAGILE SUBSTRATE AND METHOD FOR MANUFACTURING SUCH SUBSTRATE | |
FR2805394B1 (en) | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE | |
DE69825517D1 (en) | Manufacturing process of a semiconductor substrate | |
DE69916728D1 (en) | Process for cleaning a semiconductor substrate | |
EP1150342A4 (en) | Etching solution, etched article and method for etched article | |
EP1168424A4 (en) | Etching solution, etched article and method for etched article | |
GB2333267B (en) | Method of etching a silicon layer | |
FR2795554B1 (en) | HOLES LATERAL ENGRAVING METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICES | |
GB9924488D0 (en) | Semiconductor device having a plurality of mosfets on substrate and method of manufacturing the same | |
GB0009280D0 (en) | Method of cystallising a semiconductor film | |
GB2304457B (en) | Method of forming metal wirings on a semiconductor substrate by dry etching | |
FR2781065B1 (en) | METHOD OF PLACING-ROUTING A GLOBAL CLOCK CIRCUIT ON AN INTEGRATED CIRCUIT, AND ASSOCIATED DEVICES | |
GB0013656D0 (en) | Method and apparatus for removing photoresist on a semiconductor wafer | |
FR2752330B1 (en) | PROCESS FOR REMOVAL OF METAL CONTAMINANTS FROM A SIMOX SUBSTRATE | |
IL122937A0 (en) | Semiconductor etching process and apparatus | |
FR2816528B3 (en) | PROCESS FOR SELECTIVE ETCHING OF COPPER AND SIDE CLEANING AND CIRCUMFERENCE OF A SUBSTRATE | |
FR2779006B1 (en) | PROCESS FOR FORMING POROUS SILICON IN A SILICON SUBSTRATE, PARTICULARLY FOR IMPROVING THE PERFORMANCE OF AN INDUCTIVE CIRCUIT | |
FR2738670B1 (en) | METHOD AND APPARATUS FOR FORMING A PATTERN ON AN INTEGRATED CIRCUIT SUBSTRATE | |
FR2788374B1 (en) | METHOD FOR MANUFACTURING A SOI-TYPE SEMICONDUCTOR DEVICE | |
FR2763780B1 (en) | METHOD FOR MANUFACTURING PRINTED CIRCUITS ON A METAL SUBSTRATE |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |