FR2812765A3 - DIODE ELECTROLUMINESCENTE EN AlInGaN AMORPHE - Google Patents

DIODE ELECTROLUMINESCENTE EN AlInGaN AMORPHE

Info

Publication number
FR2812765A3
FR2812765A3 FR0010394A FR0010394A FR2812765A3 FR 2812765 A3 FR2812765 A3 FR 2812765A3 FR 0010394 A FR0010394 A FR 0010394A FR 0010394 A FR0010394 A FR 0010394A FR 2812765 A3 FR2812765 A3 FR 2812765A3
Authority
FR
France
Prior art keywords
amorphous
type
compound semiconductor
semiconductor layer
led
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR0010394A
Other languages
English (en)
Other versions
FR2812765B3 (fr
Inventor
Juses Chao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to GB0017755A priority Critical patent/GB2365208A/en
Priority to HK00104479A priority patent/HK1026818A2/xx
Priority to DE20013106U priority patent/DE20013106U1/de
Application filed by Individual filed Critical Individual
Priority to FR0010394A priority patent/FR2812765B3/fr
Publication of FR2812765A3 publication Critical patent/FR2812765A3/fr
Application granted granted Critical
Publication of FR2812765B3 publication Critical patent/FR2812765B3/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • H01L33/325—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen characterised by the doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/16—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
    • H01L33/18—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen

Abstract

Une diode électroluminescente en AlInGaN amorphe comprend une couche de semi-conducteur d'un composé amorphe dopé de type i, de type p et/ou de type n sur un substrat en GaN (100) ou sur un substrat en saphir.La diode électroluminescente en AlInGaN amorphe a un faible coût de fabrication et un haut rendement.
FR0010394A 2000-07-19 2000-08-07 DIODE ELECTROLUMINESCENTE EN AlInGaN AMORPHE Expired - Fee Related FR2812765B3 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
GB0017755A GB2365208A (en) 2000-07-19 2000-07-19 Amorphous alingan light emitting diode
HK00104479A HK1026818A2 (en) 2000-07-19 2000-07-20 Amorphous aiingan light emitting diode
DE20013106U DE20013106U1 (de) 2000-07-19 2000-07-28 Lichtemittierende Diode aus amorphem AlInGaN
FR0010394A FR2812765B3 (fr) 2000-07-19 2000-08-07 DIODE ELECTROLUMINESCENTE EN AlInGaN AMORPHE

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
GB0017755A GB2365208A (en) 2000-07-19 2000-07-19 Amorphous alingan light emitting diode
HK00104479A HK1026818A2 (en) 2000-07-19 2000-07-20 Amorphous aiingan light emitting diode
DE20013106U DE20013106U1 (de) 2000-07-19 2000-07-28 Lichtemittierende Diode aus amorphem AlInGaN
FR0010394A FR2812765B3 (fr) 2000-07-19 2000-08-07 DIODE ELECTROLUMINESCENTE EN AlInGaN AMORPHE

Publications (2)

Publication Number Publication Date
FR2812765A3 true FR2812765A3 (fr) 2002-02-08
FR2812765B3 FR2812765B3 (fr) 2002-06-14

Family

ID=27625408

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0010394A Expired - Fee Related FR2812765B3 (fr) 2000-07-19 2000-08-07 DIODE ELECTROLUMINESCENTE EN AlInGaN AMORPHE

Country Status (4)

Country Link
DE (1) DE20013106U1 (fr)
FR (1) FR2812765B3 (fr)
GB (1) GB2365208A (fr)
HK (1) HK1026818A2 (fr)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0992882A (ja) * 1995-09-25 1997-04-04 Mitsubishi Electric Corp 半導体発光素子，及びその製造方法
US5729029A (en) * 1996-09-06 1998-03-17 Hewlett-Packard Company Maximizing electrical doping while reducing material cracking in III-V nitride semiconductor devices
US6194742B1 (en) * 1998-06-05 2001-02-27 Lumileds Lighting, U.S., Llc Strain engineered and impurity controlled III-V nitride semiconductor films and optoelectronic devices
US6233265B1 (en) * 1998-07-31 2001-05-15 Xerox Corporation AlGaInN LED and laser diode structures for pure blue or green emission

Also Published As

Publication number Publication date
DE20013106U1 (de) 2000-10-19
HK1026818A2 (en) 2000-11-24
FR2812765B3 (fr) 2002-06-14
GB0017755D0 (en) 2000-09-06
GB2365208A (en) 2002-02-13

Similar Documents

Publication Publication Date Title
TWI265641B (en) Semiconductor light emitting component and fabrication method thereof
TWI451589B (zh) 具電流阻斷結構之發光裝置及製造具電流阻斷結構發光裝置之方法
WO2002091483A3 (fr) Dispositif photovoltaique ameliore
EP2237334A3 (fr) Diode électroluminescente à base de nitrure du groupe III
EP1670106A4 (fr) Dispositif semi-conducteur en nitrure et procede de fabrication de celui-ci
MY143405A (en) N-type nitride semiconductor laminate and semiconductor device using same
EP1387453A4 (fr) Element semiconducteur a compose de nitrure de gallium
EP1553640A4 (fr) Dispositif semi-conducteur a luminescence, procede de fabrication de ce dernier et appareil a luminescence comprenant ce dispositif
EP1248303A4 (fr) Dispositif luminescent
CA2276335A1 (fr) Dispositif a semi-conducteur au nitrure
AU2001269459A1 (en) Nitride semiconductor device
TW200638562A (en) Light-emitting device, method for making the same, and nitride semiconductor substrate
SG127832A1 (en) Light-emitting device, method for making the same,and nitride semiconductor substrate
EP1884999A4 (fr) Dispositif semi-conducteur et son procede de fabrication
HK1063377A1 (en) Light emitting device and a method of manufacturing the same
MY138543A (en) Trench cut light emitting diodes and methods of fabricating same
EP2045889A3 (fr) Dispositif électroluminescent de semi-conducteur à nitrure
WO2005020337A8 (fr) Dispositif photo-emetteur
EP0877455A3 (fr) Dispositif semi-conducteur émetteur de lumière et méthode de fabrication
TW200616259A (en) Nitride semiconductor light emitting element, and method of manufacturing nitride semiconductor light emitting element
US20090261346A1 (en) Integrating CMOS and Optical Devices on a Same Chip
TW200507112A (en) Nitride semiconductor device and method for manufacturing the same
TW200509422A (en) Light-emitting device and manufacturing method thereof
Lu et al. Monolithic integration of enhancement-mode vertical driving transistorson a standard InGaN/GaN light emitting diode structure
WO2005045901A8 (fr) Procede et structure permettant de former un silicium contraint pour des dispositifs cmos

Legal Events

Date Code Title Description
ST Notification of lapse