GB0017755D0 - Amorphous allngan light emitting diode - Google Patents

Amorphous allngan light emitting diode

Info

Publication number
GB0017755D0
GB0017755D0 GBGB0017755.0A GB0017755A GB0017755D0 GB 0017755 D0 GB0017755 D0 GB 0017755D0 GB 0017755 A GB0017755 A GB 0017755A GB 0017755 D0 GB0017755 D0 GB 0017755D0
Authority
GB
United Kingdom
Prior art keywords
allngan
amorphous
light emitting
emitting diode
diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GBGB0017755.0A
Other versions
GB2365208A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to GB0017755A priority Critical patent/GB2365208A/en
Priority to HK00104479A priority patent/HK1026818A2/en
Priority to DE20013106U priority patent/DE20013106U1/en
Priority to FR0010394A priority patent/FR2812765B3/en
Publication of GB0017755D0 publication Critical patent/GB0017755D0/en
Publication of GB2365208A publication Critical patent/GB2365208A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • H01L33/325—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen characterised by the doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/16—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
    • H01L33/18—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
GB0017755A 2000-07-19 2000-07-19 Amorphous alingan light emitting diode Withdrawn GB2365208A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
GB0017755A GB2365208A (en) 2000-07-19 2000-07-19 Amorphous alingan light emitting diode
HK00104479A HK1026818A2 (en) 2000-07-19 2000-07-20 Amorphous aiingan light emitting diode
DE20013106U DE20013106U1 (en) 2000-07-19 2000-07-28 Amorphous AlInGaN light emitting diode
FR0010394A FR2812765B3 (en) 2000-07-19 2000-08-07 AMORPHOUS ALINGaN LIGHT-EMITTING DIODE

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
GB0017755A GB2365208A (en) 2000-07-19 2000-07-19 Amorphous alingan light emitting diode
HK00104479A HK1026818A2 (en) 2000-07-19 2000-07-20 Amorphous aiingan light emitting diode
DE20013106U DE20013106U1 (en) 2000-07-19 2000-07-28 Amorphous AlInGaN light emitting diode
FR0010394A FR2812765B3 (en) 2000-07-19 2000-08-07 AMORPHOUS ALINGaN LIGHT-EMITTING DIODE

Publications (2)

Publication Number Publication Date
GB0017755D0 true GB0017755D0 (en) 2000-09-06
GB2365208A GB2365208A (en) 2002-02-13

Family

ID=27625408

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0017755A Withdrawn GB2365208A (en) 2000-07-19 2000-07-19 Amorphous alingan light emitting diode

Country Status (4)

Country Link
DE (1) DE20013106U1 (en)
FR (1) FR2812765B3 (en)
GB (1) GB2365208A (en)
HK (1) HK1026818A2 (en)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0992882A (en) * 1995-09-25 1997-04-04 Mitsubishi Electric Corp Light emitting semiconductor device and manufacturing method thereof
US5729029A (en) * 1996-09-06 1998-03-17 Hewlett-Packard Company Maximizing electrical doping while reducing material cracking in III-V nitride semiconductor devices
US6194742B1 (en) * 1998-06-05 2001-02-27 Lumileds Lighting, U.S., Llc Strain engineered and impurity controlled III-V nitride semiconductor films and optoelectronic devices
US6233265B1 (en) * 1998-07-31 2001-05-15 Xerox Corporation AlGaInN LED and laser diode structures for pure blue or green emission

Also Published As

Publication number Publication date
DE20013106U1 (en) 2000-10-19
HK1026818A2 (en) 2000-11-24
FR2812765B3 (en) 2002-06-14
GB2365208A (en) 2002-02-13
FR2812765A3 (en) 2002-02-08

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Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)