GB0017755D0 - Amorphous allngan light emitting diode - Google Patents
Amorphous allngan light emitting diodeInfo
- Publication number
- GB0017755D0 GB0017755D0 GBGB0017755.0A GB0017755A GB0017755D0 GB 0017755 D0 GB0017755 D0 GB 0017755D0 GB 0017755 A GB0017755 A GB 0017755A GB 0017755 D0 GB0017755 D0 GB 0017755D0
- Authority
- GB
- United Kingdom
- Prior art keywords
- allngan
- amorphous
- light emitting
- emitting diode
- diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
- H01L33/325—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
- H01L33/18—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB0017755A GB2365208A (en) | 2000-07-19 | 2000-07-19 | Amorphous alingan light emitting diode |
HK00104479A HK1026818A2 (en) | 2000-07-19 | 2000-07-20 | Amorphous aiingan light emitting diode |
DE20013106U DE20013106U1 (en) | 2000-07-19 | 2000-07-28 | Amorphous AlInGaN light emitting diode |
FR0010394A FR2812765B3 (en) | 2000-07-19 | 2000-08-07 | AMORPHOUS ALINGaN LIGHT-EMITTING DIODE |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB0017755A GB2365208A (en) | 2000-07-19 | 2000-07-19 | Amorphous alingan light emitting diode |
HK00104479A HK1026818A2 (en) | 2000-07-19 | 2000-07-20 | Amorphous aiingan light emitting diode |
DE20013106U DE20013106U1 (en) | 2000-07-19 | 2000-07-28 | Amorphous AlInGaN light emitting diode |
FR0010394A FR2812765B3 (en) | 2000-07-19 | 2000-08-07 | AMORPHOUS ALINGaN LIGHT-EMITTING DIODE |
Publications (2)
Publication Number | Publication Date |
---|---|
GB0017755D0 true GB0017755D0 (en) | 2000-09-06 |
GB2365208A GB2365208A (en) | 2002-02-13 |
Family
ID=27625408
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB0017755A Withdrawn GB2365208A (en) | 2000-07-19 | 2000-07-19 | Amorphous alingan light emitting diode |
Country Status (4)
Country | Link |
---|---|
DE (1) | DE20013106U1 (en) |
FR (1) | FR2812765B3 (en) |
GB (1) | GB2365208A (en) |
HK (1) | HK1026818A2 (en) |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0992882A (en) * | 1995-09-25 | 1997-04-04 | Mitsubishi Electric Corp | Light emitting semiconductor device and manufacturing method thereof |
US5729029A (en) * | 1996-09-06 | 1998-03-17 | Hewlett-Packard Company | Maximizing electrical doping while reducing material cracking in III-V nitride semiconductor devices |
US6194742B1 (en) * | 1998-06-05 | 2001-02-27 | Lumileds Lighting, U.S., Llc | Strain engineered and impurity controlled III-V nitride semiconductor films and optoelectronic devices |
US6233265B1 (en) * | 1998-07-31 | 2001-05-15 | Xerox Corporation | AlGaInN LED and laser diode structures for pure blue or green emission |
-
2000
- 2000-07-19 GB GB0017755A patent/GB2365208A/en not_active Withdrawn
- 2000-07-20 HK HK00104479A patent/HK1026818A2/en not_active IP Right Cessation
- 2000-07-28 DE DE20013106U patent/DE20013106U1/en not_active Expired - Lifetime
- 2000-08-07 FR FR0010394A patent/FR2812765B3/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
GB2365208A (en) | 2002-02-13 |
FR2812765B3 (en) | 2002-06-14 |
HK1026818A2 (en) | 2000-11-24 |
FR2812765A3 (en) | 2002-02-08 |
DE20013106U1 (en) | 2000-10-19 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |