FR2803091B1 - METHOD FOR DOPING THE EXTRINSIC BASE OF A BIPOLAR TRANSISTOR - Google Patents
METHOD FOR DOPING THE EXTRINSIC BASE OF A BIPOLAR TRANSISTORInfo
- Publication number
- FR2803091B1 FR2803091B1 FR9916283A FR9916283A FR2803091B1 FR 2803091 B1 FR2803091 B1 FR 2803091B1 FR 9916283 A FR9916283 A FR 9916283A FR 9916283 A FR9916283 A FR 9916283A FR 2803091 B1 FR2803091 B1 FR 2803091B1
- Authority
- FR
- France
- Prior art keywords
- doping
- bipolar transistor
- extrinsic base
- extrinsic
- base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66272—Silicon vertical transistors
- H01L29/66287—Silicon vertical transistors with a single crystalline emitter, collector or base including extrinsic, link or graft base formed on the silicon substrate, e.g. by epitaxy, recrystallisation, after insulating device isolation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9916283A FR2803091B1 (en) | 1999-12-22 | 1999-12-22 | METHOD FOR DOPING THE EXTRINSIC BASE OF A BIPOLAR TRANSISTOR |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9916283A FR2803091B1 (en) | 1999-12-22 | 1999-12-22 | METHOD FOR DOPING THE EXTRINSIC BASE OF A BIPOLAR TRANSISTOR |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2803091A1 FR2803091A1 (en) | 2001-06-29 |
FR2803091B1 true FR2803091B1 (en) | 2002-03-08 |
Family
ID=9553660
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR9916283A Expired - Fee Related FR2803091B1 (en) | 1999-12-22 | 1999-12-22 | METHOD FOR DOPING THE EXTRINSIC BASE OF A BIPOLAR TRANSISTOR |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR2803091B1 (en) |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA2031253A1 (en) * | 1989-12-01 | 1991-06-02 | Kenji Aoki | Method of producing bipolar transistor |
JP3079575B2 (en) * | 1990-12-20 | 2000-08-21 | 株式会社日立製作所 | Method for manufacturing semiconductor device |
US5256162A (en) * | 1991-05-01 | 1993-10-26 | Hewlett Packard Company | Apparatus for forming shallow electrical junctions |
-
1999
- 1999-12-22 FR FR9916283A patent/FR2803091B1/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
FR2803091A1 (en) | 2001-06-29 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |
Effective date: 20090831 |