FR2801421B1 - EXTENDED DRAIN MOS TRANSISTOR - Google Patents

EXTENDED DRAIN MOS TRANSISTOR

Info

Publication number
FR2801421B1
FR2801421B1 FR9914484A FR9914484A FR2801421B1 FR 2801421 B1 FR2801421 B1 FR 2801421B1 FR 9914484 A FR9914484 A FR 9914484A FR 9914484 A FR9914484 A FR 9914484A FR 2801421 B1 FR2801421 B1 FR 2801421B1
Authority
FR
France
Prior art keywords
mos transistor
extended drain
drain mos
extended
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9914484A
Other languages
French (fr)
Other versions
FR2801421A1 (en
Inventor
Philippe Delpech
Didier Cottin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Priority to FR9914484A priority Critical patent/FR2801421B1/en
Publication of FR2801421A1 publication Critical patent/FR2801421A1/en
Application granted granted Critical
Publication of FR2801421B1 publication Critical patent/FR2801421B1/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66659—Lateral single gate silicon transistors with asymmetry in the channel direction, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
    • H01L29/7835—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/6656—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using multiple spacer layers, e.g. multiple sidewall spacers

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
FR9914484A 1999-11-18 1999-11-18 EXTENDED DRAIN MOS TRANSISTOR Expired - Fee Related FR2801421B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR9914484A FR2801421B1 (en) 1999-11-18 1999-11-18 EXTENDED DRAIN MOS TRANSISTOR

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9914484A FR2801421B1 (en) 1999-11-18 1999-11-18 EXTENDED DRAIN MOS TRANSISTOR

Publications (2)

Publication Number Publication Date
FR2801421A1 FR2801421A1 (en) 2001-05-25
FR2801421B1 true FR2801421B1 (en) 2003-10-24

Family

ID=9552242

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9914484A Expired - Fee Related FR2801421B1 (en) 1999-11-18 1999-11-18 EXTENDED DRAIN MOS TRANSISTOR

Country Status (1)

Country Link
FR (1) FR2801421B1 (en)

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6476768A (en) * 1987-09-18 1989-03-22 Nec Corp Semiconductor device and manufacture thereof
KR950000141B1 (en) * 1990-04-03 1995-01-10 미쓰비시 뎅끼 가부시끼가이샤 Semiconductor device & manufacturing method thereof
US5168072A (en) * 1990-10-12 1992-12-01 Texas Instruments Incorporated Method of fabricating an high-performance insulated-gate field-effect transistor
US5661048A (en) * 1995-03-21 1997-08-26 Motorola, Inc. Method of making an insulated gate semiconductor device
US5759897A (en) * 1996-09-03 1998-06-02 Advanced Micro Devices, Inc. Method of making an asymmetrical transistor with lightly and heavily doped drain regions and ultra-heavily doped source region
US5744371A (en) * 1996-10-01 1998-04-28 Kadosh; Daniel Asymmetrical p-channel transistor having a boron migration barrier and LDD implant only in the drain region
US5789298A (en) * 1996-11-04 1998-08-04 Advanced Micro Devices, Inc. High performance mosfet structure having asymmetrical spacer formation and method of making the same
US5904529A (en) * 1997-08-25 1999-05-18 Advanced Micro Devices, Inc. Method of making an asymmetrical IGFET and providing a field dielectric between active regions of a semiconductor substrate

Also Published As

Publication number Publication date
FR2801421A1 (en) 2001-05-25

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20090731