FR2795869B1 - Procedes ameliores de formation de la connexion enterree et de sa barriere quantique dans des condensateurs de cellules a tranchee profonde - Google Patents

Procedes ameliores de formation de la connexion enterree et de sa barriere quantique dans des condensateurs de cellules a tranchee profonde

Info

Publication number
FR2795869B1
FR2795869B1 FR0007852A FR0007852A FR2795869B1 FR 2795869 B1 FR2795869 B1 FR 2795869B1 FR 0007852 A FR0007852 A FR 0007852A FR 0007852 A FR0007852 A FR 0007852A FR 2795869 B1 FR2795869 B1 FR 2795869B1
Authority
FR
France
Prior art keywords
boreed
forming
connection
improved methods
quantum barrier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0007852A
Other languages
English (en)
Other versions
FR2795869A1 (fr
Inventor
Mathias Bostelmann
Corinne Buchet
Patrick Raffin
Francis Rodier
Jean Marc Rousseau
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2795869A1 publication Critical patent/FR2795869A1/fr
Application granted granted Critical
Publication of FR2795869B1 publication Critical patent/FR2795869B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
    • H10B12/0385—Making a connection between the transistor and the capacitor, e.g. buried strap

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
FR0007852A 1999-07-01 2000-06-20 Procedes ameliores de formation de la connexion enterree et de sa barriere quantique dans des condensateurs de cellules a tranchee profonde Expired - Fee Related FR2795869B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP99480047 1999-07-01

Publications (2)

Publication Number Publication Date
FR2795869A1 FR2795869A1 (fr) 2001-01-05
FR2795869B1 true FR2795869B1 (fr) 2005-05-20

Family

ID=8242445

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0007852A Expired - Fee Related FR2795869B1 (fr) 1999-07-01 2000-06-20 Procedes ameliores de formation de la connexion enterree et de sa barriere quantique dans des condensateurs de cellules a tranchee profonde

Country Status (4)

Country Link
US (1) US6344390B1 (fr)
JP (1) JP3552650B2 (fr)
FR (1) FR2795869B1 (fr)
TW (1) TW483152B (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10019090A1 (de) * 2000-04-12 2001-10-25 Infineon Technologies Ag Grabenkondensator sowie dazugehöriges Herstellungsverfahren
DE10208774B4 (de) * 2002-02-28 2005-09-15 Infineon Technologies Ag Verfahren zur Herstellung einer Speicherzelle
DE10254160B4 (de) * 2002-11-20 2006-07-20 Infineon Technologies Ag Transistorarray und damit hergestellte Halbleiterspeicheranordnung
JP2006114686A (ja) * 2004-10-14 2006-04-27 Sony Corp 半導体装置およびその製造方法
US7795673B2 (en) * 2007-07-23 2010-09-14 Macronix International Co., Ltd. Vertical non-volatile memory
US8227310B2 (en) 2008-08-06 2012-07-24 International Business Machines Corporation Integrated circuits comprising an active transistor electrically connected to a trench capacitor by an overlying contact and methods of making
US7999300B2 (en) * 2009-01-28 2011-08-16 Globalfoundries Singapore Pte. Ltd. Memory cell structure and method for fabrication thereof
US9484269B2 (en) * 2010-06-24 2016-11-01 Globalfoundries Inc. Structure and method to control bottom corner threshold in an SOI device

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0449654A (ja) * 1990-06-19 1992-02-19 Nec Corp 半導体メモリ
TW520072U (en) * 1991-07-08 2003-02-01 Samsung Electronics Co Ltd A semiconductor device having a multi-layer metal contact
US5451809A (en) * 1994-09-07 1995-09-19 Kabushiki Kaisha Toshiba Smooth surface doped silicon film formation
US5543348A (en) * 1995-03-29 1996-08-06 Kabushiki Kaisha Toshiba Controlled recrystallization of buried strap in a semiconductor memory device
DE19752968C1 (de) * 1997-11-28 1999-06-24 Siemens Ag Speicherzellenanordnung und Verfahren zu deren Herstellung
US6040213A (en) * 1998-01-20 2000-03-21 International Business Machines Corporation Polysilicon mini spacer for trench buried strap formation
US5899741A (en) * 1998-03-18 1999-05-04 Taiwan Semiconductor Manufacturing Company Ltd. Method of manufacturing low resistance and low junction leakage contact
US6008104A (en) * 1998-04-06 1999-12-28 Siemens Aktiengesellschaft Method of fabricating a trench capacitor with a deposited isolation collar
US6140175A (en) * 1999-03-03 2000-10-31 International Business Machines Corporation Self-aligned deep trench DRAM array device
US6066527A (en) * 1999-07-26 2000-05-23 Infineon Technologies North America Corp. Buried strap poly etch back (BSPE) process

Also Published As

Publication number Publication date
JP3552650B2 (ja) 2004-08-11
JP2001036032A (ja) 2001-02-09
US6344390B1 (en) 2002-02-05
FR2795869A1 (fr) 2001-01-05
TW483152B (en) 2002-04-11

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20130228