FR2794286B1 - Niveau d'interconnexion de type damascene pour dispositif micro-electronique - Google Patents
Niveau d'interconnexion de type damascene pour dispositif micro-electroniqueInfo
- Publication number
- FR2794286B1 FR2794286B1 FR9906628A FR9906628A FR2794286B1 FR 2794286 B1 FR2794286 B1 FR 2794286B1 FR 9906628 A FR9906628 A FR 9906628A FR 9906628 A FR9906628 A FR 9906628A FR 2794286 B1 FR2794286 B1 FR 2794286B1
- Authority
- FR
- France
- Prior art keywords
- microelectronic device
- interconnection level
- type interconnection
- damascene type
- damascene
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/5329—Insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9906628A FR2794286B1 (fr) | 1999-05-26 | 1999-05-26 | Niveau d'interconnexion de type damascene pour dispositif micro-electronique |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9906628A FR2794286B1 (fr) | 1999-05-26 | 1999-05-26 | Niveau d'interconnexion de type damascene pour dispositif micro-electronique |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2794286A1 FR2794286A1 (fr) | 2000-12-01 |
FR2794286B1 true FR2794286B1 (fr) | 2003-06-06 |
Family
ID=9546002
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR9906628A Expired - Fee Related FR2794286B1 (fr) | 1999-05-26 | 1999-05-26 | Niveau d'interconnexion de type damascene pour dispositif micro-electronique |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR2794286B1 (fr) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW432546B (en) * | 1999-11-25 | 2001-05-01 | Taiwan Semiconductor Mfg | Manufacturing method of copper damascene |
US6737747B2 (en) | 2002-01-15 | 2004-05-18 | International Business Machines Corporation | Advanced BEOL interconnect structures with low-k PE CVD cap layer and method thereof |
JP4340040B2 (ja) | 2002-03-28 | 2009-10-07 | 富士通マイクロエレクトロニクス株式会社 | 半導体装置の製造方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5818071A (en) * | 1995-02-02 | 1998-10-06 | Dow Corning Corporation | Silicon carbide metal diffusion barrier layer |
US6156149A (en) * | 1997-05-07 | 2000-12-05 | Applied Materials, Inc. | In situ deposition of a dielectric oxide layer and anti-reflective coating |
-
1999
- 1999-05-26 FR FR9906628A patent/FR2794286B1/fr not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
FR2794286A1 (fr) | 2000-12-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |