FR2792455B1 - Procede et installation de correction d'un circuit integre par un faisceau d'ions controle par le profil des variations du taux de particules secondaires detectees - Google Patents
Procede et installation de correction d'un circuit integre par un faisceau d'ions controle par le profil des variations du taux de particules secondaires detecteesInfo
- Publication number
- FR2792455B1 FR2792455B1 FR9904805A FR9904805A FR2792455B1 FR 2792455 B1 FR2792455 B1 FR 2792455B1 FR 9904805 A FR9904805 A FR 9904805A FR 9904805 A FR9904805 A FR 9904805A FR 2792455 B1 FR2792455 B1 FR 2792455B1
- Authority
- FR
- France
- Prior art keywords
- correcting
- profile
- variations
- installation
- rate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/32—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9904805A FR2792455B1 (fr) | 1999-04-16 | 1999-04-16 | Procede et installation de correction d'un circuit integre par un faisceau d'ions controle par le profil des variations du taux de particules secondaires detectees |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9904805A FR2792455B1 (fr) | 1999-04-16 | 1999-04-16 | Procede et installation de correction d'un circuit integre par un faisceau d'ions controle par le profil des variations du taux de particules secondaires detectees |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2792455A1 FR2792455A1 (fr) | 2000-10-20 |
FR2792455B1 true FR2792455B1 (fr) | 2003-02-28 |
Family
ID=9544499
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR9904805A Expired - Fee Related FR2792455B1 (fr) | 1999-04-16 | 1999-04-16 | Procede et installation de correction d'un circuit integre par un faisceau d'ions controle par le profil des variations du taux de particules secondaires detectees |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR2792455B1 (fr) |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4027062A1 (de) * | 1990-08-27 | 1992-04-23 | Integrated Circuit Testing | Verfahren und anordnung zum testen und reparieren einer integrierten schaltung |
US5140164A (en) * | 1991-01-14 | 1992-08-18 | Schlumberger Technologies, Inc. | Ic modification with focused ion beam system |
JPH07280890A (ja) * | 1994-04-08 | 1995-10-27 | Advantest Corp | Ic試験装置並びにそれに使われるイオンビームテスタ及びこの装置を用いたicの不良部分の特定方法 |
-
1999
- 1999-04-16 FR FR9904805A patent/FR2792455B1/fr not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
FR2792455A1 (fr) | 2000-10-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP1238119A4 (fr) | Procede et appareil permettant de lisser des films fins conducteurs par faisceau ionique d'amas gazeux | |
AU2001288130A1 (en) | Chair for correcting an improper alignment of spinal vertebrae and method for correcting an improper alignment of spinal vertebrae by means of the chair | |
DE59814001D1 (de) | Methode zur automatischen Einstellung des Elektrodenabstandes einer Funkenstrecke bei elektrohydraulischen Stosswellensystemen | |
EP0945892A3 (fr) | Dispositif et méthode pour nettoyer une source d' ions en cours d' utilisation | |
SG91925A1 (en) | Post treatment of via opening by n-containing plasma or h-containing plasma for elimination of fluorine species in the fsg near the surfaces of the via opening | |
SG44054A1 (en) | Method and apparatus for ion beam formation in an ion implanter | |
GB2356162B (en) | Method and apparatus for concentrating and/or positioning particles or cells | |
EP1171389A4 (fr) | Composition et procede permettant de precipiter les ions metalliques des eaux residuaires issues du traitement des semi-conducteurs tout en ameliorant le fonctionnement d'un microfiltre | |
GB2301705B (en) | Methods and device for the introduction of ions into quadrupole ion traps | |
SG84593A1 (en) | System and method for cleaning contaminated surfaces in an ion implanter | |
GB2389228B (en) | Ion beam processing method and apparatus therefor | |
MY118103A (en) | Process for the removal of sulfate ions | |
FR2776375B1 (fr) | Methode de caracterisation d'un processus d'implantation ionique | |
GB9601088D0 (en) | Method for controlling the ion generation rate for mass selective loading of ions in ion traps | |
GB2334337B (en) | Method for detection of substances by ion mobility spectrometry | |
AU2001290065A1 (en) | Method and system for determining pressure compensation factors in an ion implanter | |
ATE230810T1 (de) | Ionenergiedämpfung | |
DE69211583T2 (de) | Ionenimplantierungsverfahren und Vorrichtung zur Kontrolle der Kontaminierungspartikel | |
GB2375226B (en) | Ion implantation apparatus suited for low energy ion implantation and tuning method therefor | |
SG87109A1 (en) | System and method for cleaning silicon-coated surfaces in an ion implanter | |
FR2792455B1 (fr) | Procede et installation de correction d'un circuit integre par un faisceau d'ions controle par le profil des variations du taux de particules secondaires detectees | |
GB0228235D0 (en) | Ion beam irradiation apparatus for supressing charge up of substrate and method for the same | |
AU2065099A (en) | Method of trapping ions in an ion trapping device | |
GB0209404D0 (en) | Ion beam irradiation apparatus and method of igniting a plasma for the same | |
FR2778493B1 (fr) | Procede et installation de correction des defauts de circuits integres par un faisceau d'ions |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |
Effective date: 20141231 |