FR2792455B1 - Procede et installation de correction d'un circuit integre par un faisceau d'ions controle par le profil des variations du taux de particules secondaires detectees - Google Patents

Procede et installation de correction d'un circuit integre par un faisceau d'ions controle par le profil des variations du taux de particules secondaires detectees

Info

Publication number
FR2792455B1
FR2792455B1 FR9904805A FR9904805A FR2792455B1 FR 2792455 B1 FR2792455 B1 FR 2792455B1 FR 9904805 A FR9904805 A FR 9904805A FR 9904805 A FR9904805 A FR 9904805A FR 2792455 B1 FR2792455 B1 FR 2792455B1
Authority
FR
France
Prior art keywords
correcting
profile
variations
installation
rate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9904805A
Other languages
English (en)
Other versions
FR2792455A1 (fr
Inventor
Bruno Benteo
Romain Desplats
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centre National dEtudes Spatiales CNES
Original Assignee
Centre National dEtudes Spatiales CNES
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre National dEtudes Spatiales CNES filed Critical Centre National dEtudes Spatiales CNES
Priority to FR9904805A priority Critical patent/FR2792455B1/fr
Publication of FR2792455A1 publication Critical patent/FR2792455A1/fr
Application granted granted Critical
Publication of FR2792455B1 publication Critical patent/FR2792455B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/32Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers using masks
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
FR9904805A 1999-04-16 1999-04-16 Procede et installation de correction d'un circuit integre par un faisceau d'ions controle par le profil des variations du taux de particules secondaires detectees Expired - Fee Related FR2792455B1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR9904805A FR2792455B1 (fr) 1999-04-16 1999-04-16 Procede et installation de correction d'un circuit integre par un faisceau d'ions controle par le profil des variations du taux de particules secondaires detectees

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9904805A FR2792455B1 (fr) 1999-04-16 1999-04-16 Procede et installation de correction d'un circuit integre par un faisceau d'ions controle par le profil des variations du taux de particules secondaires detectees

Publications (2)

Publication Number Publication Date
FR2792455A1 FR2792455A1 (fr) 2000-10-20
FR2792455B1 true FR2792455B1 (fr) 2003-02-28

Family

ID=9544499

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9904805A Expired - Fee Related FR2792455B1 (fr) 1999-04-16 1999-04-16 Procede et installation de correction d'un circuit integre par un faisceau d'ions controle par le profil des variations du taux de particules secondaires detectees

Country Status (1)

Country Link
FR (1) FR2792455B1 (fr)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4027062A1 (de) * 1990-08-27 1992-04-23 Integrated Circuit Testing Verfahren und anordnung zum testen und reparieren einer integrierten schaltung
US5140164A (en) * 1991-01-14 1992-08-18 Schlumberger Technologies, Inc. Ic modification with focused ion beam system
JPH07280890A (ja) * 1994-04-08 1995-10-27 Advantest Corp Ic試験装置並びにそれに使われるイオンビームテスタ及びこの装置を用いたicの不良部分の特定方法

Also Published As

Publication number Publication date
FR2792455A1 (fr) 2000-10-20

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20141231