FR2778493B1 - Procede et installation de correction des defauts de circuits integres par un faisceau d'ions - Google Patents

Procede et installation de correction des defauts de circuits integres par un faisceau d'ions

Info

Publication number
FR2778493B1
FR2778493B1 FR9805881A FR9805881A FR2778493B1 FR 2778493 B1 FR2778493 B1 FR 2778493B1 FR 9805881 A FR9805881 A FR 9805881A FR 9805881 A FR9805881 A FR 9805881A FR 2778493 B1 FR2778493 B1 FR 2778493B1
Authority
FR
France
Prior art keywords
installation
ion beam
circuits integrated
correcting faults
faults
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9805881A
Other languages
English (en)
Other versions
FR2778493A1 (fr
Inventor
Jamel Benbrik
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centre National dEtudes Spatiales CNES
Original Assignee
Centre National dEtudes Spatiales CNES
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre National dEtudes Spatiales CNES filed Critical Centre National dEtudes Spatiales CNES
Priority to FR9805881A priority Critical patent/FR2778493B1/fr
Priority to EP99918038A priority patent/EP1078388A1/fr
Priority to PCT/FR1999/001102 priority patent/WO1999059184A1/fr
Publication of FR2778493A1 publication Critical patent/FR2778493A1/fr
Application granted granted Critical
Publication of FR2778493B1 publication Critical patent/FR2778493B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
    • H01L21/76892—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances modifying the pattern
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/026—Means for avoiding or neutralising unwanted electrical charges on tube components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
    • H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching for microworking, e.g. etching of gratings, trimming of electrical components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3178—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for applying thin layers on objects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/004—Charge control of objects or beams

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
FR9805881A 1998-05-11 1998-05-11 Procede et installation de correction des defauts de circuits integres par un faisceau d'ions Expired - Fee Related FR2778493B1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FR9805881A FR2778493B1 (fr) 1998-05-11 1998-05-11 Procede et installation de correction des defauts de circuits integres par un faisceau d'ions
EP99918038A EP1078388A1 (fr) 1998-05-11 1999-05-10 Procede et installation de correction des defauts de circuits integres par un faisceau d'ions
PCT/FR1999/001102 WO1999059184A1 (fr) 1998-05-11 1999-05-10 Procede et installation de correction des defauts de circuits integres par un faisceau d'ions

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9805881A FR2778493B1 (fr) 1998-05-11 1998-05-11 Procede et installation de correction des defauts de circuits integres par un faisceau d'ions

Publications (2)

Publication Number Publication Date
FR2778493A1 FR2778493A1 (fr) 1999-11-12
FR2778493B1 true FR2778493B1 (fr) 2001-11-02

Family

ID=9526192

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9805881A Expired - Fee Related FR2778493B1 (fr) 1998-05-11 1998-05-11 Procede et installation de correction des defauts de circuits integres par un faisceau d'ions

Country Status (3)

Country Link
EP (1) EP1078388A1 (fr)
FR (1) FR2778493B1 (fr)
WO (1) WO1999059184A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1868255B1 (fr) * 2006-06-14 2011-10-19 Novaled AG Procédé destiné au traitement de surface sous vide

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4639301B2 (en) * 1985-04-24 1999-05-04 Micrion Corp Focused ion beam processing
US5006795A (en) * 1985-06-24 1991-04-09 Nippon Telephone and Telegraph Public Corporation Charged beam radiation apparatus
US5683547A (en) * 1990-11-21 1997-11-04 Hitachi, Ltd. Processing method and apparatus using focused energy beam

Also Published As

Publication number Publication date
WO1999059184A1 (fr) 1999-11-18
EP1078388A1 (fr) 2001-02-28
FR2778493A1 (fr) 1999-11-12

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20090119