FR2792113B1 - METHOD FOR PRODUCING AN INTEGRATED CIRCUIT COMPRISING A SIDE INSULATION TRENCH ATTACHED TO AN ACTIVE ZONE OF A TRANSISTOR, AND CORRESPONDING INTEGRATED CIRCUIT - Google Patents

METHOD FOR PRODUCING AN INTEGRATED CIRCUIT COMPRISING A SIDE INSULATION TRENCH ATTACHED TO AN ACTIVE ZONE OF A TRANSISTOR, AND CORRESPONDING INTEGRATED CIRCUIT

Info

Publication number
FR2792113B1
FR2792113B1 FR9904269A FR9904269A FR2792113B1 FR 2792113 B1 FR2792113 B1 FR 2792113B1 FR 9904269 A FR9904269 A FR 9904269A FR 9904269 A FR9904269 A FR 9904269A FR 2792113 B1 FR2792113 B1 FR 2792113B1
Authority
FR
France
Prior art keywords
integrated circuit
transistor
producing
active zone
side insulation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR9904269A
Other languages
French (fr)
Other versions
FR2792113A1 (en
Inventor
Coster Walter De
Alain Inard
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Priority to FR9904269A priority Critical patent/FR2792113B1/en
Publication of FR2792113A1 publication Critical patent/FR2792113A1/en
Application granted granted Critical
Publication of FR2792113B1 publication Critical patent/FR2792113B1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
FR9904269A 1999-04-06 1999-04-06 METHOD FOR PRODUCING AN INTEGRATED CIRCUIT COMPRISING A SIDE INSULATION TRENCH ATTACHED TO AN ACTIVE ZONE OF A TRANSISTOR, AND CORRESPONDING INTEGRATED CIRCUIT Expired - Lifetime FR2792113B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR9904269A FR2792113B1 (en) 1999-04-06 1999-04-06 METHOD FOR PRODUCING AN INTEGRATED CIRCUIT COMPRISING A SIDE INSULATION TRENCH ATTACHED TO AN ACTIVE ZONE OF A TRANSISTOR, AND CORRESPONDING INTEGRATED CIRCUIT

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9904269A FR2792113B1 (en) 1999-04-06 1999-04-06 METHOD FOR PRODUCING AN INTEGRATED CIRCUIT COMPRISING A SIDE INSULATION TRENCH ATTACHED TO AN ACTIVE ZONE OF A TRANSISTOR, AND CORRESPONDING INTEGRATED CIRCUIT

Publications (2)

Publication Number Publication Date
FR2792113A1 FR2792113A1 (en) 2000-10-13
FR2792113B1 true FR2792113B1 (en) 2002-08-09

Family

ID=9544062

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9904269A Expired - Lifetime FR2792113B1 (en) 1999-04-06 1999-04-06 METHOD FOR PRODUCING AN INTEGRATED CIRCUIT COMPRISING A SIDE INSULATION TRENCH ATTACHED TO AN ACTIVE ZONE OF A TRANSISTOR, AND CORRESPONDING INTEGRATED CIRCUIT

Country Status (1)

Country Link
FR (1) FR2792113B1 (en)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07193121A (en) * 1993-12-27 1995-07-28 Toshiba Corp Production of semiconductor device
JPH0897276A (en) * 1994-09-29 1996-04-12 Toshiba Corp Manufacture of semiconductor device
KR100213196B1 (en) * 1996-03-15 1999-08-02 윤종용 Trench device separation
US5712185A (en) * 1996-04-23 1998-01-27 United Microelectronics Method for forming shallow trench isolation
TW388100B (en) * 1997-02-18 2000-04-21 Hitachi Ulsi Eng Corp Semiconductor deivce and process for producing the same
US5731241A (en) * 1997-05-15 1998-03-24 Taiwan Semiconductor Manufacturing Company, Ltd. Self-aligned sacrificial oxide for shallow trench isolation

Also Published As

Publication number Publication date
FR2792113A1 (en) 2000-10-13

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