FR2786569B1 - Circuit de test de cellules eeprom - Google Patents

Circuit de test de cellules eeprom

Info

Publication number
FR2786569B1
FR2786569B1 FR9815149A FR9815149A FR2786569B1 FR 2786569 B1 FR2786569 B1 FR 2786569B1 FR 9815149 A FR9815149 A FR 9815149A FR 9815149 A FR9815149 A FR 9815149A FR 2786569 B1 FR2786569 B1 FR 2786569B1
Authority
FR
France
Prior art keywords
test circuit
cell test
eeprom cell
primary
capacitor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9815149A
Other languages
English (en)
Other versions
FR2786569A1 (fr
Inventor
Philippe Boivin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Priority to FR9815149A priority Critical patent/FR2786569B1/fr
Priority to US09/447,977 priority patent/US6590256B2/en
Publication of FR2786569A1 publication Critical patent/FR2786569A1/fr
Application granted granted Critical
Publication of FR2786569B1 publication Critical patent/FR2786569B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G11C29/50004—Marginal testing, e.g. race, voltage or current testing of threshold voltage
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G11C2029/5002—Characteristic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/18—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
    • G11C29/24—Accessing extra cells, e.g. dummy cells or redundant cells

Landscapes

  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Non-Volatile Memory (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Tests Of Electronic Circuits (AREA)
FR9815149A 1998-11-27 1998-11-27 Circuit de test de cellules eeprom Expired - Fee Related FR2786569B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR9815149A FR2786569B1 (fr) 1998-11-27 1998-11-27 Circuit de test de cellules eeprom
US09/447,977 US6590256B2 (en) 1998-11-27 1999-11-23 EEPROM cell testing circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9815149A FR2786569B1 (fr) 1998-11-27 1998-11-27 Circuit de test de cellules eeprom

Publications (2)

Publication Number Publication Date
FR2786569A1 FR2786569A1 (fr) 2000-06-02
FR2786569B1 true FR2786569B1 (fr) 2001-02-09

Family

ID=9533434

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9815149A Expired - Fee Related FR2786569B1 (fr) 1998-11-27 1998-11-27 Circuit de test de cellules eeprom

Country Status (2)

Country Link
US (1) US6590256B2 (fr)
FR (1) FR2786569B1 (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2826779A1 (fr) * 2001-07-02 2003-01-03 St Microelectronics Sa Contact antistatique pour ligne en silicium polycristallin
US6764930B2 (en) * 2001-09-26 2004-07-20 Agere Systems Inc. Method and structure for modular, highly linear MOS capacitors using nitrogen implantation
US6900097B2 (en) * 2003-05-12 2005-05-31 United Microelectronics Corp. Method for forming single-level electrically erasable and programmable read only memory operated in environment with high/low-voltage
US7019356B2 (en) * 2004-08-02 2006-03-28 Texas Instruments Incorporated Memory device with reduced cell area
US7800156B2 (en) * 2008-02-25 2010-09-21 Tower Semiconductor Ltd. Asymmetric single poly NMOS non-volatile memory cell
US7859043B2 (en) * 2008-02-25 2010-12-28 Tower Semiconductor Ltd. Three-terminal single poly NMOS non-volatile memory cell
US8344440B2 (en) * 2008-02-25 2013-01-01 Tower Semiconductor Ltd. Three-terminal single poly NMOS non-volatile memory cell with shorter program/erase times

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3176810D1 (en) * 1980-12-23 1988-08-18 Fujitsu Ltd Electrically programmable non-volatile semiconductor memory device
US4924278A (en) * 1987-06-19 1990-05-08 Advanced Micro Devices, Inc. EEPROM using a merged source and control gate
US4963825A (en) * 1989-12-21 1990-10-16 Intel Corporation Method of screening EPROM-related devices for endurance failure
EP0595775B1 (fr) * 1992-10-29 1999-07-28 STMicroelectronics S.r.l. Méthode d'évaluation de la couche diélectrique de mémoires EPROM, EEPROM et flash-EEPROM non-volatiles
US5297087A (en) * 1993-04-29 1994-03-22 Micron Semiconductor, Inc. Methods and devices for accelerating failure of marginally defective dielectric layers

Also Published As

Publication number Publication date
FR2786569A1 (fr) 2000-06-02
US20020190310A1 (en) 2002-12-19
US6590256B2 (en) 2003-07-08

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20070731